DF1000R17IE4BOSA1

DF1000R17IE4BOSA1
Mfr. #:
DF1000R17IE4BOSA1
Manufacturer:
Infineon Technologies
Description:
Trans IGBT Module N-CH 1700V 1.39KA 6250mW Automotive 12-Pin PRIME3-1 Tray
Lifecycle:
New from this manufacturer.
Datasheet:
DF1000R17IE4BOSA1 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Product Attribute
Attribute Value
Tags
DF1000, DF100, DF10, DF1
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans IGBT Module N-CH 1700V 1.39KA 6250mW Automotive 12-Pin PRIME3-1 Tray
***et Europe
IGBT Module N-Ch 1700V 1000A 12-pin PRIME3-1
***pNet
IGBT Module Trans Polarity N-Ch 1000A;1.7kV
***i-Key
IGBT MODULE 1700V 1000A
***ark
IGBT Module; Transistor Polarity:N Channel; DC Collector Current:1000A; Collector Emitter Voltage Vces:1.7kV; Power Dissipation Pd:6.25kW; No. of Pins:12; Collector Emitter Saturation Voltage Vce(sat):2V; Module Configuration:Chopper;RoHS Compliant: Yes
***nell
IGBT,HI PO CHOP,1700V,1000A,PRIMEPACK; Transistor Polarity:N Channel; DC Collector Current:1000A; Collector Emitter Voltage Vces:2V; Power Dissipation Max:6.25kW; Collector Emitter Voltage V(br)ceo:1.7kV; Operating Temperature Range:-40°C to +150°C; No. of Pins:12
***ment14 APAC
IGBT, HI PO CHOP, 1700V, 1000A, PRIM; Module Configuration:Single; Transistor Polarity:N Channel; DC Collector Current:1000A; Collector Emitter Voltage Vces:2V; Power Dissipation Pd:6.25kW; Collector Emitter Voltage V(br)ceo:1.7kV; Operating Temperature Range:-40°C to +150°C; Transistor Case Style:Module; No. of Pins:12; SVHC:No SVHC (20-Jun-2011); Power Dissipation Max:6.25kW
***ineon
1700V PrimePACK3 chopper IGBT module with IGBT4 and NTC. | Summary of Features: Extended Operation Temperature T(tvj op); High DC Stability; High Current Density; Low Switching Losses; V(vj op) = 150C; Low V(cesat); Package with CTI > 400; High Creepage and Clearance Distances; High Power and Thermal Cycling Capability; Copper Base Plate; UL recognized | Benefits: High Power Density; Standardized housing | Target Applications: drives; wind; solar; cav; ups
Part # Mfg. Description Stock Price
DF1000R17IE4BOSA1
DISTI # 33718100
Infineon Technologies AGTrans IGBT Module N-CH 1700V 1.39KA 6250mW Automotive 12-Pin PRIME3-1 Tray2
  • 2:$504.7615
  • 1:$511.6760
DF1000R17IE4BOSA1
DISTI # DF1000R17IE4BOSA1-ND
Infineon Technologies AGIGBT MODULE 1700V 1000A
RoHS: Not compliant
Min Qty: 2
Container: Bulk
Temporarily Out of Stock
  • 2:$540.0850
DF1000R17IE4BOSA1
DISTI # DF1000R17IE4BOSA1
Infineon Technologies AGIGBT Module N-Ch 1700V 1000A 12-pin PRIME3-1 - Trays (Alt: DF1000R17IE4BOSA1)
RoHS: Compliant
Min Qty: 2
Container: Tray
Americas - 0
  • 20:$489.1900
  • 12:$501.2900
  • 8:$513.9900
  • 4:$527.2900
  • 2:$534.2900
DF1000R17IE4
DISTI # 641-DF1000R17IE4
Infineon Technologies AGIGBT Modules IGBT MODULES 1700V 1000A3
  • 1:$548.2400
  • 5:$515.2000
Image Part # Description
DF1000R17IE4D_B2

Mfr.#: DF1000R17IE4D_B2

OMO.#: OMO-DF1000R17IE4D-B2

IGBT Modules
DF1000R17IE4

Mfr.#: DF1000R17IE4

OMO.#: OMO-DF1000R17IE4

IGBT Modules IGBT MODULES 1700V 1000A
DF1000R17IE4BOSA1

Mfr.#: DF1000R17IE4BOSA1

OMO.#: OMO-DF1000R17IE4BOSA1-INFINEON-TECHNOLOGIES

Trans IGBT Module N-CH 1700V 1.39KA 6250mW Automotive 12-Pin PRIME3-1 Tray
DF1000R17IE4DB2BOSA1

Mfr.#: DF1000R17IE4DB2BOSA1

OMO.#: OMO-DF1000R17IE4DB2BOSA1-INFINEON-TECHNOLOGIES

IGBT MODULE 1700V 1000A
DF1000R17IE4D_B2

Mfr.#: DF1000R17IE4D_B2

OMO.#: OMO-DF1000R17IE4D-B2-125

IGBT Modules
DF1000R17IE4

Mfr.#: DF1000R17IE4

OMO.#: OMO-DF1000R17IE4-125

IGBT Modules IGBT MODULES 1700V 1000A
Availability
Stock:
Available
On Order:
5500
Enter Quantity:
Current price of DF1000R17IE4BOSA1 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Reference price (USD)
Quantity
Unit Price
Ext. Price
1
$773.84
$773.84
10
$735.14
$7 351.43
100
$696.45
$69 645.15
500
$657.76
$328 879.90
1000
$619.07
$619 068.00
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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