OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

SIHB12N60ET5-GE3

SIHB12N60ET5-GE3
Mfr. #:
SIHB12N60ET5-GE3
Manufacturer:
Vishay
Description:
MOSFET N-CH 600V 12A TO263
Lifecycle:
New from this manufacturer.
Datasheet:
SIHB12N60ET5-GE3 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:
SIHB12N60ET5-GE3 more Information
Product Attribute
Attribute Value
Tags
SIHB12N60, SIHB12N6, SIHB12N, SIHB12, SIHB1, SIHB, SIH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***i-Key
MOSFET N-CH 600V 12A TO263
***ronik
N-CH 600V 12A 380mOhm TO-263
***ark
N-CHANNEL 600V
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
E Series High Voltage MOSFETs
Vishay Siliconix E Series High Voltage MOSFETs are super junction N-Channel power MOSFETs with a 30% reduction in specific ON-Resistance versus the S Series MOSFETs. These E Series high-performance MOSFETs feature low ON-resistance (RDS(on)), low input capacitance (Ciss), reduced capacitive switching losses, and ultra-low gate charge (Qg). The E series MOSFETs are also available in 850VDS high voltage variants with 3A drain current (ID), low RDS(ON) of 0.82Ω, and low gate charge (Qg). These high-performance MOSFETs come in different packages like TO-247AC, TO-220AB, TO-220 FULLPAK, TO-247AC, D2PAK (TO-263), IPAK (TO-251), DPAK (TO-252), and IPAK (TO-251). Typical applications include server and telecom power supplies, lighting, industrial, battery chargers, renewable energy, and SMPS.
Part # Mfg. Description Stock Price
SIHB12N60ET5-GE3
DISTI # SIHB12N60ET5-GE3-ND		Vishay SiliconixMOSFET N-CH 600V 12A TO263
RoHS: Not compliant
Min Qty: 1
Container: Bulk		800In Stock
  • 5000:$0.9145
  • 2500:$0.9497
  • 1000:$1.0201
  • 500:$1.2311
  • 100:$1.4985
  • 10:$1.8640
  • 1:$2.0800
SIHB12N60ET5-GE3
DISTI # SIHB12N60ET5-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 600V 12A 3-Pin D2PAK T/R - Bulk (Alt: SIHB12N60ET5-GE3)
RoHS: Not Compliant
Min Qty: 800
Container: Bulk		Americas - 0
  • 8000:$0.8579
  • 4800:$0.8819
  • 3200:$0.9069
  • 1600:$0.9459
  • 800:$0.9749
SIHB12N60ET5-GE3
DISTI # 78-SIHB12N60ET5-GE3		Vishay IntertechnologiesMOSFET N-Channel 600V
RoHS: Compliant		0
  • 800:$1.1700
  • 1600:$0.9710
  • 3200:$0.9040
  • 5600:$0.8710
SIHB12N60ET5-GE3
DISTI # TMOS2029		Vishay IntertechnologiesN-CH 600V 12A 380mOhm TO-263
RoHS: Compliant		Stock DE - 3200Stock HK - 0Stock US - 0
  • 800:$1.3400
  • 1600:$1.2600
  • 2400:$1.1800
  • 3200:$1.0334
Image Part # Description
SIHB12N65E-GE3

Mfr.#: SIHB12N65E-GE3

OMO.#: OMO-SIHB12N65E-GE3

 MOSFET 650V Vds 30V Vgs D2PAK (TO-263)
SIHB12N60E-GE3

Mfr.#: SIHB12N60E-GE3

OMO.#: OMO-SIHB12N60E-GE3

 MOSFET 600V Vds 30V Vgs D2PAK (TO-263)
SIHB12N60ET1-GE3

Mfr.#: SIHB12N60ET1-GE3

OMO.#: OMO-SIHB12N60ET1-GE3

 MOSFET N-Channel 600V
SIHB12N60E-GE3

Mfr.#: SIHB12N60E-GE3

OMO.#: OMO-SIHB12N60E-GE3-VISHAY

 Darlington Transistors MOSFET 600V 380mOhm@10V 12A N-Ch E-SRS
SIHB12N65E-GE3

Mfr.#: SIHB12N65E-GE3

OMO.#: OMO-SIHB12N65E-GE3-VISHAY

 IGBT Transistors MOSFET 650V 392mOhm@10V 12A N-Ch E-SRS
SIHB12N60E

Mfr.#: SIHB12N60E

OMO.#: OMO-SIHB12N60E-1190

 New and Original
SIHB12N60EGE3

Mfr.#: SIHB12N60EGE3

OMO.#: OMO-SIHB12N60EGE3-1190

 Power Field-Effect Transistor, 12A I(D), 600V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
SIHB12N65E

Mfr.#: SIHB12N65E

OMO.#: OMO-SIHB12N65E-1190

 New and Original
SIHB12N60ET1-GE3

Mfr.#: SIHB12N60ET1-GE3

OMO.#: OMO-SIHB12N60ET1-GE3-VISHAY

 MOSFET N-CH 600V 12A TO263
SIHB12N60ET5-GE3

Mfr.#: SIHB12N60ET5-GE3

OMO.#: OMO-SIHB12N60ET5-GE3-VISHAY

 MOSFET N-CH 600V 12A TO263
Availability
Stock:
Available
On Order:
4000
Enter Quantity:
Current price of SIHB12N60ET5-GE3 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Reference price (USD)
Quantity
Unit Price
Ext. Price
1
$1.55
$1.55
10
$1.47
$14.72
100
$1.39
$139.40
500
$1.32
$658.30
1000
$1.24
$1 239.10
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
Start with
Top