OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

SIHB12N65E-GE3

SIHB12N65E-GE3
Mfr. #:
SIHB12N65E-GE3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET 650V Vds 30V Vgs D2PAK (TO-263)
Lifecycle:
New from this manufacturer.
Datasheet:
SIHB12N65E-GE3 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SIHB12N65E-GE3 Datasheet
ECAD Model:
More Information:
SIHB12N65E-GE3 more Information
Product Attribute
Attribute Value
Manufacturer:
Vishay
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
Through Hole
Package / Case:
TO-220FP-3
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
700 V
Id - Continuous Drain Current:
12 A
Rds On - Drain-Source Resistance:
380 mOhms
Vgs th - Gate-Source Threshold Voltage:
4 V
Vgs - Gate-Source Voltage:
30 V
Qg - Gate Charge:
35 nC
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
156 W
Configuration:
Single
Channel Mode:
Enhancement
Packaging:
Bulk
Series:
E
Brand:
Vishay / Siliconix
Fall Time:
18 ns
Product Type:
MOSFET
Rise Time:
19 ns
Factory Pack Quantity:
1000
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
35 ns
Typical Turn-On Delay Time:
16 ns
Unit Weight:
0.050717 oz
Tags
SIHB12N6, SIHB12N, SIHB12, SIHB1, SIHB, SIH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
E Series N-Channel 650 V 380 mO 35 nC Surface Mount Power Mosfet - D2PAK
***ical
Trans MOSFET N-CH 650V 12A 3-Pin(2+Tab) D2PAK
***nell
MOSFET, N CH, 650V, 12A, TO-263-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 12A; Drain Source Voltage Vds: 650V; On Resistance Rds(on): 0.33ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: -; Powe
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
E Series High Voltage MOSFETs
Vishay Siliconix E Series High Voltage MOSFETs are super junction N-Channel power MOSFETs with a 30% reduction in specific ON-Resistance versus the S Series MOSFETs. These E Series high-performance MOSFETs feature low ON-resistance (RDS(on)), low input capacitance (Ciss), reduced capacitive switching losses, and ultra-low gate charge (Qg). The E series MOSFETs are also available in 850VDS high voltage variants with 3A drain current (ID), low RDS(ON) of 0.82Ω, and low gate charge (Qg). These high-performance MOSFETs come in different packages like TO-247AC, TO-220AB, TO-220 FULLPAK, TO-247AC, D2PAK (TO-263), IPAK (TO-251), DPAK (TO-252), and IPAK (TO-251). Typical applications include server and telecom power supplies, lighting, industrial, battery chargers, renewable energy, and SMPS.
Part # Mfg. Description Stock Price
SIHB12N65E-GE3
DISTI # V36:1790_09219044		Vishay IntertechnologiesTrans MOSFET N-CH 650V 12A 3-Pin(2+Tab) D2PAK
RoHS: Compliant		0
  • 1000000:$1.2910
  • 500000:$1.2950
  • 100000:$1.7320
  • 10000:$2.5750
  • 1000:$2.7200
SIHB12N65E-GE3
DISTI # SIHB12N65E-GE3-ND		Vishay SiliconixMOSFET N-CH 650V 12A D2PAK
Min Qty: 1
Container: Tube		3000In Stock
  • 5000:$1.2594
  • 2500:$1.2783
  • 1000:$1.3730
  • 500:$1.6571
  • 100:$2.0169
  • 10:$2.5090
  • 1:$2.7900
SIHB12N65E-GE3
DISTI # SIHB12N65E-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 650V 12A 3-Pin D2PAK - Tape and Reel (Alt: SIHB12N65E-GE3)
RoHS: Not Compliant
Min Qty: 1000
Container: Reel		Americas - 0
  • 4000:$1.1900
  • 6000:$1.1900
  • 10000:$1.1900
  • 1000:$1.2900
  • 2000:$1.2900
SIHB12N65E-GE3
DISTI # SIHB12N65E-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 650V 12A 3-Pin D2PAK (Alt: SIHB12N65E-GE3)
Min Qty: 1		Europe - 0
    SIHB12N65E-GE3
    DISTI # 99W9446    		Vishay IntertechnologiesN-CHANNEL 650V
    RoHS: Not Compliant    		0
    • 1000:$1.6300
    • 500:$1.7400
    • 250:$1.8700
    • 100:$2.0400
    • 1:$2.4900
    SIHB12N65E-GE3
    DISTI # 78-SIHB12N65E-GE3    		Vishay IntertechnologiesMOSFET 650V Vds 30V Vgs D2PAK (TO-263)
    RoHS: Compliant    		2000
    • 1:$2.7900
    • 10:$2.3600
    • 100:$1.9400
    • 500:$1.8100
    • 1000:$1.3700
    • 2000:$1.2700
    • 5000:$1.2500
    SIHB12N65E-GE3Vishay IntertechnologiesMOSFET 650V Vds 30V Vgs D2PAK (TO-263)
    RoHS: Compliant    		Americas -
      SIHB12N65E-GE3
      DISTI # 2400357      		Vishay IntertechnologiesMOSFET, N CH, 650V, 12A, TO-263-3
      RoHS: Compliant      		289
      • 5000:$1.9400
      • 3000:$2.0100
      • 1000:$2.1600
      • 100:$3.1700
      • 25:$3.7200
      • 10:$3.9500
      • 1:$4.3800
      SIHB12N65E-GE3
      DISTI # 2400357      		Vishay IntertechnologiesMOSFET, N CH, 650V, 12A, TO-263-3
      RoHS: Compliant      		289
      • 1000:£1.0400
      • 500:£1.3500
      • 250:£1.4400
      • 100:£1.5400
      • 10:£1.9900
      • 1:£2.7200
      Image Part # Description
      SMBJ5360B-TP

      Mfr.#: SMBJ5360B-TP

      OMO.#: OMO-SMBJ5360B-TP

      		 Zener Diodes 5W 25V
      SMBJ5360B-TP

      Mfr.#: SMBJ5360B-TP

      OMO.#: OMO-SMBJ5360B-TP-MICRO-COMMERCIAL-COMPONENTS

      		 Zener Diodes 5W 25V
      AGN210S4H

      Mfr.#: AGN210S4H

      OMO.#: OMO-AGN210S4H-PANASONIC

      		 Low Signal Relays - PCB 2 Form C 1 Form A 30VDC SMD 4.5V
      74477010

      Mfr.#: 74477010

      OMO.#: OMO-74477010-WURTH-ELECTRONICS

      		 FIXED IND 10UH 6.2A 22 MOHM SMD
      SMM02040C8253FB300

      Mfr.#: SMM02040C8253FB300

      OMO.#: OMO-SMM02040C8253FB300-VISHAY

      		 MELF Resistors 1/4watt 825Kohms 1% 50ppm
      Availability
      Stock:
      Available
      On Order:
      1985
      Enter Quantity:
      Current price of SIHB12N65E-GE3 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
      Reference price (USD)
      Quantity
      Unit Price
      Ext. Price
      1
      $2.94
      $2.94
      10
      $2.44
      $24.40
      100
      $1.89
      $189.00
      500
      $1.65
      $825.00
      1000
      $1.37
      $1 370.00
      2000
      $1.27
      $2 540.00
      5000
      $1.23
      $6 150.00
      10000
      $1.18
      $11 800.00
      Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
      Start with
      Newest Products
      More Newest Products
      Top