PGA26E19BA

PGA26E19BA
Mfr. #:
PGA26E19BA
Manufacturer:
Panasonic
Description:
MOSFET MOSFET 600VDC 190mohm X-GaN
Lifecycle:
New from this manufacturer.
Datasheet:
PGA26E19BA Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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ECAD Model:
More Information:
PGA26E19BA more Information
Product Attribute
Attribute Value
Manufacturer
Panasonic
Product Category
Transistors - FETs, MOSFETs - Single
RoHS
Details
Number of Channels
1 Channel
Vgs th - Gate-Source Threshold Voltage
4 V
Qg - Gate Charge
120 nC
Technology
Si
Channel Mode
Enhancement
Brand
Panasonic
Configuration
1 N-Channel
Development Kit
-
Fall Time
-
Forward Transconductance - Min
-
Minimum Operating Temperature
- 55 C
Rise Time
-
Series
GaN-FET
Transistor Type
1 N-Channel
Typical Turn-Off Delay Time
-
Typical Turn-On Delay Time
-
Tags
PGA26E1, PGA26, PGA2, PGA
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***asonic SCT
GaN Power Devices, 600V, DFN 8x8, RoHS
PGA26E X-GaN Power Transistors
Panasonic PGA26E07BA and PGA26E19BA X-GaN Power Transistors are 600V Gallium Nitride power devices based on Gate Injection Transistor (GiT) technology. PGA26E X-GaN power devices deliver Normally-Off operation with extremely high-speed switching characteristics and zero recovery loss.
X-GaN Power Solutions
Panasonic 600V Gallium Nitride (X-GaN) is a very hard, mechanically stable wide bandgap semiconductor material with high heat capacity and thermal conductivity. In its pure form, it resists cracking and can be deposited in a thin film on Sapphire (AL2O3) or Silicon Carbide (SiC), despite the mismatch in their lattice constants. X-GaN can be doped with Silicon (Si) or with Oxygen to n-type and with Magnesium (Mg) to p-type; however, the Si and Mg atoms change the way the X-GaN crystals grow, introducing tensile stresses and making them brittle.
Part # Mfg. Description Stock Price
PGA26E19BA
DISTI # 667-PGA26E19BA
Panasonic Electronic ComponentsMOSFET MOSFET 600VDC 190mohm X-GaN
RoHS: Compliant
0
  • 1:$18.2900
  • 10:$17.0700
  • 25:$16.2100
PGA26E19BA-SWEVB008
DISTI # 667-PGA26E19BASWEV8
Panasonic Electronic ComponentsPower Management IC Development Tools 600Vdc 190mOhm X-GaN 1/2 Bridge EVB
RoHS: Compliant
19
  • 1:$400.0000
PGA26E19BA-SWEVB006
DISTI # 667-PGA26E19BASWEVB6
Panasonic Electronic ComponentsPower Management IC Development Tools 600Vdc 190mOhm X-GaN Chopper EVB
RoHS: Compliant
3
  • 1:$300.0000
PGA26E19BA-DB001
DISTI # 667-PGA26E19BADB001
Panasonic Electronic ComponentsPower Management IC Development Tools SMD-ThruHole ConvKit 600VDC 190mohm X-GaN
RoHS: Compliant
0
  • 1:$45.0000
Image Part # Description
PGA26E19BA

Mfr.#: PGA26E19BA

OMO.#: OMO-PGA26E19BA

MOSFET MOSFET 600VDC 190mohm X-GaN
PGA26E07BA

Mfr.#: PGA26E07BA

OMO.#: OMO-PGA26E07BA

MOSFET MOSFET 600VDC 70mohm X-GaN
PGA26E07-DB001

Mfr.#: PGA26E07-DB001

OMO.#: OMO-PGA26E07-DB001-1190

New and Original
PGA26E07-SWEVB008

Mfr.#: PGA26E07-SWEVB008

OMO.#: OMO-PGA26E07-SWEVB008-1190

New and Original
PGA26E07BA

Mfr.#: PGA26E07BA

OMO.#: OMO-PGA26E07BA-1190

MOSFET MOSFET 600VDC 70mohm X-GaN
PGA26E19-DB001

Mfr.#: PGA26E19-DB001

OMO.#: OMO-PGA26E19-DB001-1190

New and Original
PGA26E19-SWEVB008

Mfr.#: PGA26E19-SWEVB008

OMO.#: OMO-PGA26E19-SWEVB008-1190

New and Original
PGA26E19BA

Mfr.#: PGA26E19BA

OMO.#: OMO-PGA26E19BA-1190

MOSFET MOSFET 600VDC 190mohm X-GaN
Availability
Stock:
Available
On Order:
3000
Enter Quantity:
Current price of PGA26E19BA is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Reference price (USD)
Quantity
Unit Price
Ext. Price
1
$24.32
$24.32
10
$23.10
$230.99
100
$21.88
$2 188.35
500
$20.67
$10 333.90
1000
$19.45
$19 452.00
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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