SIE812DF-T1-E3

SIE812DF-T1-E3
Mfr. #:
SIE812DF-T1-E3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET 40V 60A 125W 2.6mohm @ 10V
Lifecycle:
New from this manufacturer.
Datasheet:
SIE812DF-T1-E3 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SIE812DF-T1-E3 Datasheet
ECAD Model:
More Information:
SIE812DF-T1-E3 more Information
Product Attribute
Attribute Value
Manufacturer:
Vishay
Product Category:
MOSFET
RoHS:
E
Technology:
Si
Tradename:
TrenchFET, PolarPAK
Packaging:
Reel
Series:
SIE
Brand:
Vishay / Siliconix
Product Type:
MOSFET
Factory Pack Quantity:
3000
Subcategory:
MOSFETs
Part # Aliases:
SIE812DF-E3
Tags
SIE812, SIE81, SIE8, SIE
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
SiE812DF Series N-Channel 40 V 0.0026 Ohm 125 W Surface Mount Mosfet - PolarPAK
***ark
Transistor; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:40V; Continuous Drain Current, Id:60000mA; On Resistance, Rds(on):0.0034ohm; Rds(on) Test Voltage, Vgs:20V; Threshold Voltage, Vgs Typ:2.3V ;RoHS Compliant: Yes
***nell
MOSFET, N, POLAR PAK; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:40V; Current, Id Cont:163A; Resistance, Rds On:0.0026ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:2.3V; Case Style:PolarPAK; Termination Type:SMD; Operating Temperature Range:-50°C to +150°C; Base Number:812; Current, Idm Pulse:100A; N-channel Gate Charge:52nC; Power Dissipation:125mW; Power, Pd:125W; Resistance, Rds on @ Vgs = 10V:0.0026ohm; Resistance, Rds on @ Vgs = 4.5V:0.0034ohm; Voltage, Rds Measurement:10V; Voltage, Vds Max:40V; Voltage, Vgs th Max:3V; Voltage, Vgs th Min:1.5V
N-Channel PolarPAK® Power MOSFETs
Vishay Siliconix 20V to 75V PolarPAK® Power MOSFETs combine the thermal benefits of a double-sided cooling package with on-resistance down to as low as 1.4mΩ. The double-sided cooling provided by these Vishay Siliconix PolarPAK® Power MOSFETs gives designers a way to reduce system size and cost through better MOSFET thermal performance. These Vishay Siliconix PolarPAK® MOSFETs share the same footprint area as the standard SO-8 yet are twice as thin with a height profile of just 0.8 mm.
Part # Mfg. Description Stock Price
SIE812DF-T1-E3
DISTI # SIE812DF-T1-E3TR-ND
Vishay SiliconixMOSFET N-CH 40V 60A 10-POLARPAK
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)
Temporarily Out of Stock
  • 3000:$1.8141
SIE812DF-T1-E3
DISTI # SIE812DF-T1-E3
Vishay IntertechnologiesTrans MOSFET N-CH 40V 33A 10-Pin PolarPAK T/R - Tape and Reel (Alt: SIE812DF-T1-E3)
RoHS: Compliant
Min Qty: 3000
Container: Reel
Americas - 0
  • 3000:$1.7900
  • 6000:$1.6900
  • 12000:$1.5900
  • 18000:$1.5900
  • 30000:$1.4900
SIE812DF-T1-E3
DISTI # 781-SIE812DF-T1-E3
Vishay IntertechnologiesMOSFET 40V 60A 125W 2.6mohm @ 10V
RoHS: Compliant
0
  • 3000:$2.0700
SIE812DF-T1-E3Vishay IntertechnologiesMOSFET 40V 60A 125W 2.6mohm @ 10VAmericas -
    SIE812DF-T1-E3
    DISTI # 1497643
    Vishay Intertechnologies 
    RoHS: Compliant
    0
    • 1:$5.5100
    • 10:$4.5600
    • 100:$3.7500
    • 250:$3.6500
    • 500:$3.3100
    • 1000:$3.2900
    • 3000:$3.2800
    Image Part # Description
    SIE812DF-T1-E3

    Mfr.#: SIE812DF-T1-E3

    OMO.#: OMO-SIE812DF-T1-E3

    MOSFET 40V 60A 125W 2.6mohm @ 10V
    SIE812DF-T1-GE3

    Mfr.#: SIE812DF-T1-GE3

    OMO.#: OMO-SIE812DF-T1-GE3

    MOSFET 40V 163A 125W 2.6mohm @ 10V
    SIE812DF-T1-GE3

    Mfr.#: SIE812DF-T1-GE3

    OMO.#: OMO-SIE812DF-T1-GE3-VISHAY

    RF Bipolar Transistors MOSFET 40V 163A 125W 2.6mohm @ 10V
    SIE812DF-T1-E3

    Mfr.#: SIE812DF-T1-E3

    OMO.#: OMO-SIE812DF-T1-E3-VISHAY

    RF Bipolar Transistors MOSFET 40V 60A 125W 2.6mohm @ 10V
    SIE812DF

    Mfr.#: SIE812DF

    OMO.#: OMO-SIE812DF-1190

    New and Original
    Availability
    Stock:
    Available
    On Order:
    3500
    Enter Quantity:
    Current price of SIE812DF-T1-E3 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
    Reference price (USD)
    Quantity
    Unit Price
    Ext. Price
    1
    $3.47
    $3.47
    10
    $2.87
    $28.70
    100
    $2.36
    $236.00
    250
    $2.29
    $572.50
    500
    $2.05
    $1 025.00
    1000
    $1.73
    $1 730.00
    Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
    Start with
    Newest Products
    • Si7655DN -20 V P-Channel MOSFET
      Vishay's MOSFET enables lower RDS(ON) while providing a slimmer profile and matching PCB pattern.
    • P-Channel MOSFETs
      Vishay Siliconix's p-channel TrenchFET® GEN III and IV MOSFETs have the lowest on-resistance per area for p-channel MOSFETs.
    • Compare SIE812DF-T1-E3
      SIE812DF vs SIE812DFT1E3 vs SIE812DFT1GE3
    • Si8410DB Chipscale N-Channel MOSFET
      Vishay Siliconix's Si8410DB offers an extremely low on-resistance per area of 30 mΩ mm square.
    • 50 A VRPower® Solution (DrMOS)
      Vishay's VRPower® Solution solution that integrates a high- and low-side MOSFET and a MOSFET driver, optimized for synchronous buck applications.
    • PowerPAIR®
      Vishay's PowerPAIR series are dual asymmetric MOSFETs that help to simplify design and decrease conduction losses.
    Top