SIE812DF-T1-GE3

Mfr. #:: SIE812DF-T1-GE3
Manufacturer:: Vishay / Siliconix
Description:: MOSFET 40V 163A 125W 2.6mohm @ 10V
Lifecycle:: New from this manufacturer.
Datasheet:: SIE812DF-T1-GE3 Datasheet
Delivery:: DHL FedEx Ups TNT EMS
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HTML Datasheet:: SIE812DF-T1-GE3 Datasheet SIE812DF-T1-GE3 Datasheet (P4-P6)SIE812DF-T1-GE3 Datasheet (P7-P9)SIE812DF-T1-GE3 Datasheet (P10)
ECAD Model:
More Information:: SIE812DF-T1-GE3 more Information

Product Attribute
Attribute Value

Manufacturer:: Vishay

Product Category:: MOSFET

RoHS:: E

Technology:: Si

Tradename:: TrenchFET, PolarPAK

Packaging:: Reel

Series:: SIE

Brand:: Vishay / Siliconix

Product Type:: MOSFET

Factory Pack Quantity:: 3000

Subcategory:: MOSFETs

Part # Aliases:: SIE812DF-GE3

Tags: SIE812, SIE81, SIE8, SIE

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SIE812DF-T1-GE3 Description

***et: Trans MOSFET N-CH 40V 33A 10-Pin PolarPAK T/R

***ment14 APAC: N CHANNEL MOSFET, 40V, 60A POLARPAK

***i-Key: MOSFET N-CH 40V 60A 10POLARPAK

***ark: Transistor; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:40V; Continuous Drain Current, Id:60A; On Resistance, Rds(on):0.0034ohm; Rds(on) Test Voltage, Vgs:4.5V; Threshold Voltage, Vgs Typ:2.3V ;RoHS Compliant: Yes

SIE812DF-T1-GE3 More Information

N-Channel PolarPAK® Power MOSFETs: Vishay Siliconix 20V to 75V PolarPAK® Power MOSFETs combine the thermal benefits of a double-sided cooling package with on-resistance down to as low as 1.4mΩ. The double-sided cooling provided by these Vishay Siliconix PolarPAK® Power MOSFETs gives designers a way to reduce system size and cost through better MOSFET thermal performance. These Vishay Siliconix PolarPAK® MOSFETs share the same footprint area as the standard SO-8 yet are twice as thin with a height profile of just 0.8 mm.

Market price

Part #	Mfg.	Description	Stock	Price
SIE812DF-T1-GE3 DISTI # SIE812DF-T1-GE3-ND	Vishay Siliconix	MOSFET N-CH 40V 60A POLARPAK RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	Temporarily Out of Stock	3000:$1.8141
SIE812DF-T1-GE3 DISTI # SIE812DF-T1-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 40V 33A 10-Pin PolarPAK T/R - Tape and Reel (Alt: SIE812DF-T1-GE3) RoHS: Compliant Min Qty: 3000 Container: Reel	Americas - 0	3000:$1.7900 6000:$1.6900 12000:$1.5900 18000:$1.5900 30000:$1.4900
SIE812DF-T1-GE3 DISTI # 15R4857	Vishay Intertechnologies	N CHANNEL MOSFET, 40V, 60A POLARPAK,Transistor Polarity:N Channel,Continuous Drain Current Id:60A,Drain Source Voltage Vds:40V,On Resistance Rds(on):0.0034ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.3V RoHS Compliant: Yes	0	1:$1.9500 2000:$1.8600 4000:$1.7400 8000:$1.6200 12000:$1.5500 20000:$1.5300
SIE812DF-T1-GE3 DISTI # 26R1858	Vishay Intertechnologies	N CHANNEL MOSFET, 40V, 60A POLARPAK,Transistor Polarity:N Channel,Continuous Drain Current Id:60A,Drain Source Voltage Vds:40V,On Resistance Rds(on):0.0034ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.3V RoHS Compliant: Yes	0	1:$3.8600 25:$3.6300 50:$3.4100 100:$3.1200 250:$2.8200 500:$2.4600 1000:$1.9500
SIE812DF-T1-GE3 DISTI # 781-SIE812DF-GE3	Vishay Intertechnologies	MOSFET 40V 163A 125W 2.6mohm @ 10V RoHS: Compliant	0	3000:$1.6500

Related products

Image	Part #	Description
	Mfr.#: SIE812DF-T1-E3 OMO.#: OMO-SIE812DF-T1-E3	MOSFET 40V 60A 125W 2.6mohm @ 10V
	Mfr.#: SIE812DF-T1-GE3 OMO.#: OMO-SIE812DF-T1-GE3	MOSFET 40V 163A 125W 2.6mohm @ 10V
	Mfr.#: SIE812DF-T1-GE3 OMO.#: OMO-SIE812DF-T1-GE3-VISHAY	RF Bipolar Transistors MOSFET 40V 163A 125W 2.6mohm @ 10V
	Mfr.#: SIE812DF-T1-E3 OMO.#: OMO-SIE812DF-T1-E3-VISHAY	RF Bipolar Transistors MOSFET 40V 60A 125W 2.6mohm @ 10V
	Mfr.#: SIE812DF OMO.#: OMO-SIE812DF-1190	New and Original

Availability

Stock:: Available
On Order:: 5000
Enter Quantity:

Current price of SIE812DF-T1-GE3 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com

Reference price (USD)

Quantity
Unit Price
Ext. Price

1: ~~$3.47~~; ~~$3.47~~

10: ~~$2.87~~; ~~$28.70~~

100: ~~$2.36~~; ~~$236.00~~

250: ~~$2.29~~; ~~$572.50~~

500: ~~$2.05~~; ~~$1 025.00~~

1000: ~~$1.73~~; ~~$1 730.00~~

Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.

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SIE812DF-T1-GE3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes