IPP60R160P6XKSA1

Mfr. #:: IPP60R160P6XKSA1
Manufacturer:: Infineon Technologies
Description:: MOSFET HIGH POWER_LEGACY
Lifecycle:: New from this manufacturer.
Datasheet:: IPP60R160P6XKSA1 Datasheet
Delivery:: DHL FedEx Ups TNT EMS
Payment:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:: IPP60R160P6XKSA1 more Information

Product Attribute
Attribute Value

Manufacturer:: Infineon

Product Category:: MOSFET

RoHS:: Y

Technology:: Si

Mounting Style:: Through Hole

Package / Case:: TO-220-3

Number of Channels:: 1 Channel

Transistor Polarity:: N-Channel

Vds - Drain-Source Breakdown Voltage:: 600 V

Id - Continuous Drain Current:: 23.8 A

Rds On - Drain-Source Resistance:: 144 mOhms

Vgs th - Gate-Source Threshold Voltage:: 3.5 V

Vgs - Gate-Source Voltage:: 20 V

Qg - Gate Charge:: 44 nC

Minimum Operating Temperature:: - 55 C

Maximum Operating Temperature:: + 150 C

Pd - Power Dissipation:: 176 W

Configuration:: Single

Channel Mode:: Enhancement

Tradename:: CoolMOS

Packaging:: Tube

Height:: 15.65 mm

Length:: 10 mm

Series:: CoolMOS P6

Transistor Type:: 1 N-Channel

Width:: 4.4 mm

Brand:: Infineon Technologies

Fall Time:: 5.8 ns

Product Type:: MOSFET

Rise Time:: 7.6 ns

Factory Pack Quantity:: 500

Subcategory:: MOSFETs

Typical Turn-Off Delay Time:: 40 ns

Typical Turn-On Delay Time:: 12.5 ns

Part # Aliases:: IPP60R160P6 SP001017068

Unit Weight:: 0.211644 oz

Tags: IPP60R160P, IPP60R160, IPP60R16, IPP60R1, IPP60R, IPP60, IPP6, IPP

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IPP60R160P6XKSA1 Description

***ure Electronics: Single N-Channel 600 V 160 mOhm 44 nC CoolMOS Power Mosfet - TO-220-3

***ical: Trans MOSFET N-CH 600V 23.8A Automotive 3-Pin(3+Tab) TO-220 Tube

***et Europe: Trans MOSFET N-CH 600(Min)V 23.8A 3-Pin TO-220 Tube

***an P&S: 600V,160mΩ,23.8A,N-Channel Power MOSFET

***i-Key: MOSFET N-CH 600V TO220-3

***ark: MOSFET, N-CH, 600V, 23.8A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:23.8A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.144ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power RoHS Compliant: Yes

***ment14 APAC: Prices include import duty and tax. MOSFET, N-CH, 600V, 23.8A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:23.8A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.144ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation Pd:176W; Transistor Case Style:TO-220; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:CoolMOS P6 Series; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (27-Jun-2018)

***nell: MOSFET, CA-N, 600V, 23,8A, TO-220; Polarità Transistor:Canale N; Corrente Continua di Drain Id:23.8A; Tensione Drain Source Vds:600V; Resistenza di Attivazione Rds(on):0.144ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:4V; Dissipazione di Potenza Pd:176W; Modello Case Transistor:TO-220; No. di Pin:3Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:CoolMOS P6 Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):-; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)

***ineon: Infineons CoolMOS P6 product family is designed to enable higher system efficiency whilst being easy to design in. CoolMOS P6 closes the gap between technologies which focus on delivering ultimate performance and those which concentrate more on ease-of-use. | Summary of Features: Reduced gate charge (Q g); Higher V th; Good body diode ruggedness; Optimized integrated R g; Improved dv/dt from 50V/ns; CoolMOS quality with over 12 years manufacturing experience in superjunction technology | Benefits: Improved effciency especially in light load condition; Better efficiency in soft switching applications due to earlier turn-off; Suitable for hard- & soft-switching topologies; Optimized balance of efficiency and ease of use and good controllability of switching behavior; High robustness and better efficiency; Outstanding quality & reliability | Target Applications: PFC stages for server, telecom rectifier, PC silverbox, gaming consoles; PWM stages (TTF, LLC) for server, telecom rectifier, PC silverbox, gaming consoles

IPP60R160P6XKSA1 More Information

CoolMOS™ Power Transistors: Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.

Market price

Part #	Mfg.	Description	Stock	Price
IPP60R160P6XKSA1 DISTI # V99:2348_06377315	Infineon Technologies AG	Trans MOSFET N-CH 600V 23.8A 3-Pin(3+Tab) TO-220 Tube	3	500:$1.8570 250:$2.0650 100:$2.1720 50:$2.3000 25:$2.4200 10:$2.5520 1:$3.2780
IPP60R160P6XKSA1 DISTI # V36:1790_06377315	Infineon Technologies AG	Trans MOSFET N-CH 600V 23.8A 3-Pin(3+Tab) TO-220 Tube	0	500000:$1.3930 250000:$1.3960 50000:$1.5980 5000:$1.9460 500:$2.0040
IPP60R160P6XKSA1 DISTI # IPP60R160P6XKSA1-ND	Infineon Technologies AG	MOSFET N-CH 600V TO220-3 RoHS: Compliant Min Qty: 500 Container: Tube	Temporarily Out of Stock	500:$2.0039
IPP60R160P6XKSA1 DISTI # 33138254	Infineon Technologies AG	Trans MOSFET N-CH 600V 23.8A 3-Pin(3+Tab) TO-220 Tube	994	7:$1.4400
IPP60R160P6XKSA1 DISTI # IPP60R160P6XKSA1	Infineon Technologies AG	Trans MOSFET N-CH 600(Min)V 23.8A 3-Pin TO-220 Tube - Rail/Tube (Alt: IPP60R160P6XKSA1) RoHS: Compliant Min Qty: 500 Container: Tube	Americas - 0	3000:$1.3900 5000:$1.3900 1000:$1.4900 2000:$1.4900 500:$1.5900
IPP60R160P6XKSA1 DISTI # SP001017068	Infineon Technologies AG	Trans MOSFET N-CH 600(Min)V 23.8A 3-Pin TO-220 Tube (Alt: SP001017068) RoHS: Compliant Min Qty: 1 Container: Tube	Europe - 0	1000:€1.2900 100:€1.3900 500:€1.3900 25:€1.4900 50:€1.4900 10:€1.6900 1:€1.8900
IPP60R160P6 DISTI # 726-IPP60R160P6	Infineon Technologies AG	MOSFET HIGH POWER_LEGACY RoHS: Compliant	0	1:$3.0400 10:$2.5800 100:$2.2400 250:$2.1200 500:$1.9000
IPP60R160P6XKSA1 DISTI # 726-IPP60R160P6XKSA1	Infineon Technologies AG	MOSFET HIGH POWER_LEGACY RoHS: Compliant	0	1:$3.0400 10:$2.5800 100:$2.2400 250:$2.1200 500:$1.9000
IPP60R160P6XKSA1 DISTI # IPP60R160P6XKSA1	Infineon Technologies AG	Transistor: N-MOSFET,unipolar,600V,23.8A,176W,PG-TO220-3	2	100:$2.0400 10:$2.3500 3:$2.9300 1:$3.4000
IPP60R160P6XKSA1 DISTI # 2709938	Infineon Technologies AG	MOSFET, N-CH, 600V, 23.8A, TO-220 RoHS: Compliant	918	100:$3.9300 10:$4.8000 1:$5.3700
IPP60R160P6XKSA1 DISTI # 2709938	Infineon Technologies AG	MOSFET, N-CH, 600V, 23.8A, TO-220	918	100:£2.1600 10:£2.4900 1:£3.3000

Related products

Image	Part #	Description
	Mfr.#: IPP60R160P6XKSA1 OMO.#: OMO-IPP60R160P6XKSA1	MOSFET HIGH POWER_LEGACY
	Mfr.#: IPP60R165CPXKSA1 OMO.#: OMO-IPP60R165CPXKSA1	MOSFET N-Ch 650V 21A TO220-3 CoolMOS CP
	Mfr.#: IPP60R160C6 OMO.#: OMO-IPP60R160C6	MOSFET N-Ch 600V 23.8A TO220-3 CoolMOS C6
	Mfr.#: IPP60R160P7XKSA1 OMO.#: OMO-IPP60R160P7XKSA1	MOSFET
	Mfr.#: IPP60R160C6(6R160C6) OMO.#: OMO-IPP60R160C6-6R160C6--1190	New and Original
	Mfr.#: IPP60R160C6XKSA1 OMO.#: OMO-IPP60R160C6XKSA1-INFINEON-TECHNOLOGIES	MOSFET N-CH 600V 23.8A TO220
	Mfr.#: IPP60R160P6XKSA1 OMO.#: OMO-IPP60R160P6XKSA1-INFINEON-TECHNOLOGIES	MOSFET N-CH 600V TO220-3
	Mfr.#: IPP60R165CP 6R165P OMO.#: OMO-IPP60R165CP-6R165P-1190	New and Original
	Mfr.#: IPP60R165CPXKSA1 OMO.#: OMO-IPP60R165CPXKSA1-INFINEON-TECHNOLOGIES	MOSFET N-CH 600V 21A TO-220
	Mfr.#: IPP60R165P OMO.#: OMO-IPP60R165P-1190	New and Original

Availability

Stock:: 500
On Order:: 2483
Enter Quantity:

Current price of IPP60R160P6XKSA1 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com

Reference price (USD)

Quantity
Unit Price
Ext. Price

1: ~~$3.04~~; ~~$3.04~~

10: ~~$2.58~~; ~~$25.80~~

100: ~~$2.24~~; ~~$224.00~~

250: ~~$2.12~~; ~~$530.00~~

500: ~~$1.90~~; ~~$950.00~~

Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.

Start with

IPP60R160P 3
IPP60R160 7
IPP60R16 15
IPP60R1 69
IPP60R 187
IPP60 192
IPP6 280
IPP 1415

Newest Products

XBP14E5UFN Transient Voltage Suppressor

Torex Semiconductor offers the XBP14E5UFN transient voltage suppressor.
HITFET™ Family Switches

Infineon's HITFET family provides a higher-level of protection with over-temperature, short circuit, over-current, over-voltage, and ESD.
Compare IPP60R160P6XKSA1

IPP60R160P6 vs IPP60R160P6XKSA1 vs IPP60R160P7XKSA1
DirectFET IRF6718 MOSFET

Infineon Technologies introduces their latest generation silicon technology in a large can DirectFET package.
1200 V RC-E Reverse Conducting IGBT

Infineon's RC-E series IGBTs are built on a long tradition of application specific technologies.
XMC 2Go Development Board

Infineon's XMC 2Go is a small development board that has a complete set of on-board devices, including an on-board debugger to immediately start code development.

More Newest Products

IPP60R160P6XKSA1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes