IPL65R099C7

Mfr. #:: IPL65R099C7
Manufacturer:: Infineon Technologies
Description:: MOSFET HIGH POWER BEST IN CLASS
Lifecycle:: New from this manufacturer.
Datasheet:: IPL65R099C7 Datasheet
Delivery:: DHL FedEx Ups TNT EMS
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ECAD Model:
More Information:: IPL65R099C7 more Information

Product Attribute
Attribute Value

Manufacturer:: Infineon

Product Category:: MOSFET

Technology:: Si

Mounting Style:: SMD/SMT

Package / Case:: VSON-4

Number of Channels:: 1 Channel

Transistor Polarity:: N-Channel

Vds - Drain-Source Breakdown Voltage:: 650 V

Id - Continuous Drain Current:: 21 A

Rds On - Drain-Source Resistance:: 88 mOhms

Vgs th - Gate-Source Threshold Voltage:: 3 V

Vgs - Gate-Source Voltage:: 20 V

Qg - Gate Charge:: 45 nC

Minimum Operating Temperature:: - 40 C

Maximum Operating Temperature:: + 150 C

Pd - Power Dissipation:: 128 W

Configuration:: Single

Channel Mode:: Enhancement

Tradename:: CoolMOS

Packaging:: Reel

Height:: 1.1 mm

Length:: 8 mm

Series:: CoolMOS C7

Transistor Type:: 1 N-Channel

Width:: 8 mm

Brand:: Infineon Technologies

Fall Time:: 12 ns

Product Type:: MOSFET

Rise Time:: 5 ns

Factory Pack Quantity:: 3000

Subcategory:: MOSFETs

Typical Turn-Off Delay Time:: 89 ns

Typical Turn-On Delay Time:: 11 ns

Part # Aliases:: IPL65R099C7AUMA1 SP001032722

Tags: IPL65R0, IPL65R, IPL65, IPL6, IPL

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
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Step3:
Packaging Boxes

IPL65R099C7 More Information

CoolMOS™ 7 Superjunction MOSFETs: Infineon Technologies CoolMOS™ 7 Superjunction MOSFETs set new standards for energy efficiency, power density and ease of use. CoolMOS 7 technology is optimized for specific applications with innovative package concepts and various technologies. CoolMOS 7 MOSFETS are ideal for applications like making electric vehicle charging stations smaller with higher outputs resulting in faster car charging. Thanks to CoolMOS 7, new generations of adapters and chargers are smaller, lighter and more efficient. With CoolMOS 7, engineers can make renewable energy systems cheaper and more efficient.

CoolMOS™ Power Transistors: Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.

CoolMOS™ C7 Power MOSFETs: Infineon's CoolMOS™ C7 Power MOSFETs are a revolutionary step forward in technology, providing low RDS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range. The C7 is optimized for hard switching topologies such as Power Factor Correction (CCM PFC), Two Transistor Forward (TTF) and Solar Boost in applications such as Solar, Server, Telecom and UPS. The 650V breakdown voltage makes it suitable for Solar and Switched Mode Power Supplies (SMPS) PFC stages where extra safety margin are required. They offer the world's lowest RDS(on) of 19mΩ in a TO-247 and 45mΩ in TO-220 and D2PAK packages. The fast switching performance of C7 now enables customers to operate at switching frequencies greater than 100kHz while achieving titanium levels of efficiency in Server PFC stages.

Market price

Part #	Mfg.	Description	Stock	Price
IPL65R099C7 DISTI # 32634977	Infineon Technologies AG	0	3000	4:$7.8125
IPL65R099C7AUMA1 DISTI # IPL65R099C7AUMA1-ND	Infineon Technologies AG	MOSFET N-CH 4VSON RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	Temporarily Out of Stock	3000:$2.9757
IPL65R099C7AUMA1 DISTI # V36:1790_06377357	Infineon Technologies AG	Trans MOSFET N-CH 650V 21A 4-Pin VSON EP T/R RoHS: Compliant	0	3000000:$2.4820 1500000:$2.4840 300000:$2.6540 30000:$2.9370 3000:$2.9830
IPL65R099C7AUMA1 DISTI # V72:2272_06377357	Infineon Technologies AG	Trans MOSFET N-CH 650V 21A 4-Pin VSON EP T/R RoHS: Compliant	0
IPL65R099C7AUMA1 DISTI # IPL65R099C7AUMA1	Infineon Technologies AG	Trans MOSFET N-CH 700V 21A 5-Pin VSON T/R - Tape and Reel (Alt: IPL65R099C7AUMA1) RoHS: Compliant Min Qty: 3000 Container: Reel	Americas - 0	18000:$2.6900 30000:$2.6900 12000:$2.7900 6000:$2.8900 3000:$2.9900
IPL65R099C7AUMA1 DISTI # IPL65R099C7AUMA1	Infineon Technologies AG	Trans MOSFET N-CH 700V 21A 5-Pin VSON T/R - Bulk (Alt: IPL65R099C7AUMA1) RoHS: Compliant Min Qty: 129 Container: Bulk	Americas - 0	1290:$2.3900 645:$2.4900 387:$2.5900 258:$2.6900 129:$2.7900
IPL65R099C7AUMA1 DISTI # SP001032722	Infineon Technologies AG	Trans MOSFET N-CH 700V 21A 5-Pin VSON T/R (Alt: SP001032722) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel	Europe - 0	30000:€2.2900 18000:€2.4900 12000:€2.6900 6000:€2.7900 3000:€2.8900
IPL65R099C7AUMA1 DISTI # 84AC6838	Infineon Technologies AG	MOSFET, N-CH, 650V, 21A, 128W, VSON,Transistor Polarity:N Channel,Continuous Drain Current Id:21A,Drain Source Voltage Vds:650V,On Resistance Rds(on):0.088ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3.5V,Power RoHS Compliant: Yes	2365	1000:$3.0100 500:$3.5700 250:$3.9800 100:$4.1900 50:$4.4100 25:$4.6200 10:$4.8400 1:$5.7000
IPL65R099C7AUMA1 DISTI # 726-IPL65R099C7AUMA1	Infineon Technologies AG	MOSFET HIGH POWER BEST IN CLASS	2433	1:$5.6400 10:$4.7900 100:$4.1500 250:$3.9400 500:$3.5300 1000:$2.9800 3000:$2.8300
IPL65R099C7 DISTI # 726-IPL65R099C7	Infineon Technologies AG	MOSFET HIGH POWER BEST IN CLASS RoHS: Compliant	0	1:$5.6400 10:$4.7900 100:$4.1500 250:$3.9400 500:$3.5300 1000:$2.9800 3000:$2.8300
IPL65R099C7AUMA1	Infineon Technologies AG	RoHS: Not Compliant	3000	1000:$2.5700 500:$2.7000 100:$2.8100 25:$2.9300 1:$3.1600
IPL65R099C7AUMA1 DISTI # 2983368	Infineon Technologies AG	MOSFET, N-CH, 650V, 21A, 128W, VSON RoHS: Compliant	2359	250:$4.2700 100:$4.6800 25:$5.3500 1:$6.2300
IPL65R099C7AUMA1 DISTI # 2983368	Infineon Technologies AG	MOSFET, N-CH, 650V, 21A, 128W, VSON	2359	100:£3.5300 10:£4.0800 1:£5.3300

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	Mfr.#: IPL65R340CFDAUMA1 OMO.#: OMO-IPL65R340CFDAUMA1	MOSFET N-Ch 700V 10.9A VSON-5
	Mfr.#: IPL65R130C7AUMA1 OMO.#: OMO-IPL65R130C7AUMA1	MOSFET N-Ch 650V 15A VSON-4
	Mfr.#: IPL65R099C7 OMO.#: OMO-IPL65R099C7	MOSFET HIGH POWER BEST IN CLASS
	Mfr.#: IPL65R230C7AUMA1 OMO.#: OMO-IPL65R230C7AUMA1-INFINEON-TECHNOLOGIES	MOSFET N-CH 650V 10A 4VSON
	Mfr.#: IPL65R210CFDAUMA2 OMO.#: OMO-IPL65R210CFDAUMA2-INFINEON-TECHNOLOGIES	LOW POWER_LEGACY
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Availability

Stock:: Available
On Order:: 1000
Enter Quantity:

Current price of IPL65R099C7 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com

Reference price (USD)

Quantity
Unit Price
Ext. Price

1: ~~$5.64~~; ~~$5.64~~

10: ~~$4.79~~; ~~$47.90~~

100: ~~$4.15~~; ~~$415.00~~

250: ~~$3.94~~; ~~$985.00~~

500: ~~$3.53~~; ~~$1 765.00~~

1000: ~~$2.98~~; ~~$2 980.00~~

Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.

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IPL65R099C7

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes