IKP06N60TXKSA1

Mfr. #:: IKP06N60TXKSA1
Manufacturer:: Infineon Technologies
Description:: IGBT Transistors LOW LOSS DuoPack 600V 6A
Lifecycle:: New from this manufacturer.
Datasheet:: IKP06N60TXKSA1 Datasheet
Delivery:: DHL FedEx Ups TNT EMS
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Product Attribute
Attribute Value

Manufacturer:: Infineon

Product Category:: IGBT Transistors

RoHS:: Y

Technology:: Si

Package / Case:: TO-220-3

Mounting Style:: Through Hole

Configuration:: Single

Collector- Emitter Voltage VCEO Max:: 600 V

Collector-Emitter Saturation Voltage:: 1.5 V

Maximum Gate Emitter Voltage:: 20 V

Continuous Collector Current at 25 C:: 12 A

Pd - Power Dissipation:: 88 W

Minimum Operating Temperature:: - 40 C

Maximum Operating Temperature:: + 175 C

Series:: TRENCHSTOP IGBT

Packaging:: Tube

Brand:: Infineon Technologies

Gate-Emitter Leakage Current:: 100 nA

Product Type:: IGBT Transistors

Factory Pack Quantity:: 500

Subcategory:: IGBTs

Tradename:: TRENCHSTOP

Part # Aliases:: IKP06N60T IKP6N6TXK SP000683056

Tags: IKP06N60T, IKP06, IKP0, IKP

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IKP06N60TXKSA1 Description

***ical: Trans IGBT Chip N-CH 600V 12A 88000mW Automotive 3-Pin(3+Tab) TO-220AB Tube

***ure Electronics: IKP06N60T: 600V 12A Through Hole Low Loss DuoPack IGBT TrenchStop - PG-TO-220-3

***nsix Microsemi: Insulated Gate Bipolar Transistor, 12A I(C), 600V V(BR)CES, N-Channel, TO-220AB

***ment14 APAC: IGBT, N, 600V, 6A, TO-220; Collector Emitter Voltage Vces:2.05V; Power Dissipation Pd:88W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-220; Current Ic Continuous a Max:6A; No. of Transistors:1; Package / Case:TO-220; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:600V

***ineon SCT: The 600 V, 6 A hard-switching TRENCHSTOP™ IGBT3 copacked with full-rated free-wheeling diode in a TO220 package, leads to significant improvement of static as well as dynamic performance of the device, due to combination of trench-cell and fieldstop concept, PG-TO220-3, RoHS

***ineon: Infineon's TRENCHSTOP IGBT technology leads to significant improvement of static as well as dynamic performance of the device due to combination of trench top-cell and filed stop concept. Combination of IGBT with soft recovery Emitter Controlled Diode further minimizes the turn-on losses. The highest efficiency is reached due to the best compromise between switching and conduction losses. | Summary of Features: Lowest V ce(sat) drop for lower conduction losses; Low switching losses; Easy parallel switching capability due to positive temperature coefficient in V ce(sat); Very soft, fast recovery anti-parallel Emitter Controlled Diode; High ruggedness, temperature stable behavior; Low EMI emissions; Low gate charge; Very tight parameter distribution | Benefits: Highest efficiency low conduction and switching losses; Comprehensive portfolio in 600V and 1200V for flexibility of design; High device reliability | Target Applications: UPS; Solar Inverters; Major Home Appliances; Welding; Air conditioning; Industrial Drives; Other hard switching applications

***ical: Trans IGBT Chip N-CH 600V 12A 88000mW 3-Pin(3+Tab) TO-220AB Tube

***ure Electronics: IGP06N60T Series 600 V 12 A Through Hole Low Loss IGBT - PG-TO-220-3

***ineon SCT: Infineon's 600 V, 6 A single TRENCHSTOP™ IGBT3 in a TO220 package, leads to significant improvement of static as well as dynamic performance of the device, due to combination of trench-cell and fieldstop concept, PG-TO220-3, RoHS

***ineon: Infineon's TRENCHSTOP IGBT technology leads to significant improvement of static as well as dynamic performance of the device due to combination of trench top-cell and filed stop concept. Combination of IGBT with soft recovery Emitter Controlled Diode further minimizes the turn-on losses. The highest efficiency is reached due to the best compromise between switching and conduction losses. | Summary of Features: Lowest V ce(sat) drop for lower conduction losses; Low switching losses; Easy parallel switching capability due to positive temperature coefficient in V ce(sat); Very soft, fast recovery anti-parallel Emitter Controlled Diode; High ruggedness, temperature stable behavior; Low EMI emissions; Low gate charge; Very tight parameter distribution | Benefits: Highest efficiency low conduction and switching losses; Comprehensive portfolio in 600V and 1200V for flexibility of design; High device reliability | Target Applications: UPS; Solar Inverters; Major Home Appliances; Welding; Air conditioning; Industrial Drives; Other hard switching applications

***Yang: IKP10N60T: 650V 10A Through Hole Low Loss DuoPack IGBT TrenchStop™ - PG-TO-220-3

***ow.cn: Trans IGBT Chip N-CH 600V 24A 110000mW Automotive 3-Pin(3+Tab) TO-220AB Tube

***ineon SCT: 600 V IGBT with anti-parallel diode in TO220 package, PG-TO220-3, RoHS

***nsix Microsemi: Insulated Gate Bipolar Transistor, 20A I(C), 600V V(BR)CES, N-Channel, TO-220AB

***ment14 APAC: IGBT, N, 600V, 10A, TO-220; Transistor Type:IGBT; DC Collector Current:20A; Collector Emitter Voltage Vces:2.05V; Power Dissipation Pd:110W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-40°C to +175°C; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Ic Continuous a Max:10A; No. of Transistors:1; Package / Case:TO-220; Power Dissipation Max:110W; Power Dissipation Pd:110W; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:600V

***ineon: Infineon's TRENCHSTOP IGBT technology leads to significant improvement of static as well as dynamic performance of the device due to combination of trench top-cell and filed stop concept. Combination of IGBT with soft recovery Emitter Controlled Diode further minimizes the turn-on losses. The highest efficiency is reached due to the best compromise between switching and conduction losses. | Summary of Features: Lowest V ce(sat) drop for lower conduction losses; Low switching losses; Easy parallel switching capability due to positive temperature coefficient in V ce(sat); Very soft, fast recovery anti-parallel Emitter Controlled Diode; High ruggedness, temperature stable behavior; Low EMI emissions; Low gate charge; Very tight parameter distribution | Benefits: Highest efficiency low conduction and switching losses; Comprehensive portfolio in 600V and 1200V for flexibility of design; High device reliability | Target Applications: UPS; Solar Inverters; Major Home Appliances; Welding; Air conditioning; Industrial Drives; Other hard switching applications

***-Wing Technology: STMICROELECTRONICS STGP6NC60HD IGBT Single Transistor, 15 A, 2.5 V, 56 W, 600 V, TO-220, 3 Pins

***ical: Trans IGBT Chip N-CH 600V 15A 62500mW 3-Pin(3+Tab) TO-220AB Tube

***SIT Distribution GmbH: Insulated Gate Bipolar Transistor, 15A I(C), 600V V(BR)CES, N-Channel, TO-220AB

***nell: IGBT, TO-220; DC Collector Current: 15A; Collector Emitter Saturation Voltage Vce(on): 2.5V; Power Dissipation Pd: 56W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-220; No. of Pins: 3Pins; Operating Tem

***p One Stop: Trans IGBT Chip N-CH 600V 14.7A 35700mW 3-Pin(3+Tab) TO-220FP Tube

***ure Electronics: IKA15N60T Series N-Channel 600 V 14.7 A IGBT in TRENCHSTOP - TO-220FP

***ineon SCT: 600 V IGBT with anti-parallel diode in TO-220 Full-Pak package, PG-TO220-3, RoHS

*** Stop Electro: Insulated Gate Bipolar Transistor, 14.7A I(C), 600V V(BR)CES, N-Channel, TO-220AB

***ment14 APAC: IGBT, SINGLE, 600V, 18.3A, TO-220; DC Collector Current:18.3A; Emitter Saturation Voltage Vce(on):1.5V; Power Dissipation Pd:35.7W;

***nell: IGBT, N, 600V, 15A, TO-220; Transistor Type:IGBT; Transistor Polarity:N; Voltage, Vces:600V; Current Ic Continuous a Max:15A; Voltage, Vce Sat Max:2.05V; Power Dissipation:35.7W; Case Style:TO-220; Termination Type:Through Hole; Collector-to-Emitter Breakdown Voltage:600V; Transistors, No. of:1

***ineon: Infineon's TRENCHSTOP IGBT technology leads to significant improvement of static as well as dynamic performance of the device due to combination of trench top-cell and filed stop concept. Combination of IGBT with soft recovery Emitter Controlled Diode further minimizes the turn-on losses. The highest efficiency is reached due to the best compromise between switching and conduction losses. | Summary of Features: Lowest Vce(sat) drop for lower conduction losses; Low switching losses; Easy parallel switching capability due to positive temperature coefficient in Vce(sat); Very soft, fast recovery anti-parallel Emitter Controlled Diode; High ruggedness, temperature stable behavior; Low EMI emissions; Low gate charge; Very tight parameter distribution | Benefits: Highest efficiency low conduction and switching losses; Comprehensive portfolio in 600V for flexibility of design; High device reliability | Target Applications: UPS; Solar; Home Appliances; Welding; Air conditioning; Industrial Drives; Other hard switching applications

***ical: Trans IGBT Chip N-CH 600V 40A 100000mW 3-Pin(3+Tab) TO-220AB Tube

***r Electronics: Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel, TO-220AB

***icroelectronics: 600 V, 20 A high speed trench gate field-stop IGBT

*** Source Electronics: Trans IGBT Chip N-CH 600V 25A 80000mW 3-Pin(3+Tab) TO-220AB Tube / IGBT 600V 25A 80W TO220

***el Electronic: STMICROELECTRONICS STGP7NC60HD IGBT Single Transistor, 25 A, 2.5 V, 80 W, 600 V, TO-220, 3 Pins

***icroelectronics: N-channel 14 A, 600 V, very fast IGBT with Ultrafast diode

***ure Electronics: STGP7NC60HD Series N-Channel 600 V 25 A Very Fast PowerMESH IGBT - TO-220

***r Electronics: Insulated Gate Bipolar Transistor, 25A I(C), 600V V(BR)CES, N-Channel, TO-220AB

***nell: IGBT, 600V, 7A, TO-220; DC Collector Current: 25A; Collector Emitter Saturation Voltage Vce(on): 2.5V; Power Dissipation Pd: 80W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-220; No. of Pins: 3Pins; Ope

Market price

Part #	Mfg.	Description	Stock	Price
IKP06N60TXKSA1 DISTI # V99:2348_06383931	Infineon Technologies AG	Trans IGBT Chip N-CH 600V 12A 3-Pin(3+Tab) TO-220AB Tube RoHS: Compliant	414	2500:$0.8650 1000:$0.8735 500:$1.0643 100:$1.2205 10:$1.5451 1:$2.0079
IKP06N60TXKSA1 DISTI # V36:1790_06383931	Infineon Technologies AG	Trans IGBT Chip N-CH 600V 12A 3-Pin(3+Tab) TO-220AB Tube RoHS: Compliant	0	500000:$0.7611 250000:$0.7631 50000:$0.8990 5000:$1.1180 500:$1.1540
IKP06N60TXKSA1 DISTI # IKP06N60TXKSA1-ND	Infineon Technologies AG	IGBT 600V 12A 88W TO220-3 RoHS: Compliant Min Qty: 500 Container: Tube	Temporarily Out of Stock	500:$1.1540
IKP06N60TXKSA1 DISTI # 30177240	Infineon Technologies AG	Trans IGBT Chip N-CH 600V 12A 3-Pin(3+Tab) TO-220AB Tube RoHS: Compliant	490	14:$0.7412
IKP06N60TXKSA1 DISTI # 26197718	Infineon Technologies AG	Trans IGBT Chip N-CH 600V 12A 3-Pin(3+Tab) TO-220AB Tube RoHS: Compliant	414	8:$2.0079
IKP06N60TXK DISTI # IKP06N60TXKSA1	Infineon Technologies AG	Trans IGBT Chip N-CH 600V 12A 3-Pin(3+Tab) TO-220AB - Rail/Tube (Alt: IKP06N60TXKSA1) RoHS: Compliant Min Qty: 500 Container: Tube	Americas - 0	5000:$0.7969 3000:$0.8119 2000:$0.8399 1000:$0.8719 500:$0.9039
IKP06N60TXKSA1 DISTI # 726-IKP06N60TXKSA1	Infineon Technologies AG	IGBT Transistors LOW LOSS DuoPack 600V 6A RoHS: Compliant	998	1:$1.8400 10:$1.5700 100:$1.2500 500:$1.1000 1000:$0.9110 2500:$0.8480 5000:$0.8170 10000:$0.7850
IKP06N60T DISTI # 726-IKP06N60T	Infineon Technologies AG	IGBT Transistors LOW LOSS DuoPack 600V 6A RoHS: Compliant	360	1:$1.8400 10:$1.5700 100:$1.2500 500:$1.1000 1000:$0.9110 2500:$0.8480 5000:$0.8170 10000:$0.7850
IKP06N60TXKSA1 DISTI # 1107169	Infineon Technologies AG	IGBT TRENCHSTOP N-CHANNEL 600V 6A TO220, PK	190	500:£0.6590 200:£0.7040 100:£0.7500 20:£0.8590 10:£1.0390
IKP06N60TXKSA1 DISTI # 1107169P	Infineon Technologies AG	IGBT TRENCHSTOP N-CHANNEL 600V 6A TO220, TU	560	500:£0.6590 200:£0.7040 100:£0.7500 20:£0.8590
IKP06N60TXKSA1 DISTI # XSKDRABV0052156	Infineon Technologies AG	RoHS: Compliant	16500 in Stock0 on Order	16500:$1.0400 500:$1.1100

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IKP06N60TXKSA1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes