IKP06N60T
TrenchStop
®
Series p
IFAG IPC TD VLS
7 Rev. 2.4 12.06.2013
E, SWITCHING ENERGY LOSSES
0A 2A 4A 6A 8A 10A
0,0 mJ
0,1 mJ
0,2 mJ
0,3 mJ
0,4 mJ
0,5 mJ
0,6 mJ
E
ts
*
E
on
*
*) E
on
and E
ts
include losses
due to diode recovery
E
off
E, SWITCHING ENERGY LOSSES
0,0 mJ
0,1 mJ
0,2 mJ
0,3 mJ
0,4 mJ
E
ts
*
E
on
*
*) E
on
and E
ts
include losses
due to diode recovery
E
off
I
C
, COLLECTOR CURRENT R
G
, GATE RESISTOR
Typical switching energy losses
as a function of collector current
(inductive load, T
J
=175°C,
V
CE
=400V, V
GE
=0/15V, R
G
=23Ω,
Dynamic test circuit in Figure E)
. Typical switching energy losses
as a function of gate resistor
(inductive load, T
J
=175°C,
V
CE
= 400V, V
GE
= 0/15V, I
C
= 6A,
Dynamic test circuit in Figure E)
E, SWITCHING ENERGY LOSSES
50°C 100°C 150°C
0,0mJ
0,1mJ
0,2mJ
0,3mJ
0,4mJ
E
ts
*
E
on
*
*) E
on
and E
ts
include losses
due to diode recovery
E
off
E, SWITCHING ENERGY LOSSES
200V 300V 400V 500V
E
ts
*
E
on
*
*) E
on
and E
ts
include losses
due to diode recovery
E
off
T
J
, JUNCTION TEMPERATURE V
CE
, COLLECTOR-EMITTER VOLTAGE
Typical switching energy losses
as a function of junction
temperature
(inductive load, V
CE
=400V,
V
GE
= 0/15V, I
C
= 6A, R
G
= 23Ω,
Dynamic test circuit in Figure E)
Typical switching energy losses
as a function of collector emitter
voltage
(inductive load, T
J
= 175°C,
V
GE
= 0/15V, I
C
= 6A, R
G
= 23Ω,
Dynamic test circuit in Figure E)
