Expand menu
Hello, Sign in
My Account
0
Cart
Home
Products
Sensors
Semiconductors
Passive Components
Connectors
Power
Electromechanical
Optoelectronics
Circuit Protection
Integrated Circuits - ICs
Main Products
Manufacturers
Blog
Services
About OMO
About Us
Contact Us
Check Stock
IKP06N60TXKSA1
P1-P3
P4-P6
P7-P9
P10-P12
P13-P13
IKP06N60T
TrenchStop
®
Series
p
IFAG IPC TD VLS
4
Rev. 2.4
12.06.2013
I
C
,
COLLECTOR CURRENT
1
0
0
H
z
1
k
H
z
1
0
k
H
z
1
0
0
k
H
z
0
A
3
A
6
A
9
A
1
2
A
1
5
A
1
8
A
T
C
=
1
1
0
°
C
T
C
=
8
0
°
C
I
C
,
COLLECTOR CURRENT
1
V
1
0
V
1
0
0
V
1
0
0
0
V
0
,
1
A
1
A
1
0
A
5
µ
s
D
C
1
0
µ
s
t
p
=
1
µ
s
5
0
µ
s
5
m
s
5
0
0
µ
s
f
,
SWITCHING FREQU
ENCY
V
CE
,
COLLECTOR
-
EMITTER VO
LTAGE
Figure
1
.
Collector current
as a fun
ction of
switching f
requency
(
T
j
175
C,
D =
0.5,
V
CE
= 400V,
V
GE
= 0/+15V,
R
G
= 23
)
Figure
2
.
Safe operating a
rea
(
D =
0,
T
C
= 25
C,
T
j
175
C;
V
GE
=15V)
P
tot
,
POWER DISSIPATION
2
5
°
C
5
0
°
C
7
5
°
C
1
0
0
°
C
1
2
5
°
C
1
5
0
°
C
0
W
2
0
W
4
0
W
6
0
W
8
0
W
I
C
,
COLLECTOR CURRENT
2
5
°
C
7
5
°
C
1
2
5
°
C
0
A
5
A
1
0
A
1
5
A
T
C
,
CASE TEMPERATU
RE
T
C
,
CASE TEMPERATU
RE
Figure
3
.
Power dissipation
as a fun
ction of
case temperature
(
T
j
175
C)
Figure
4
.
Collector current
as a fun
ction of
case temperature
(
V
GE
15V,
T
j
175
C)
I
c
I
c
IKP06N60T
TrenchStop
®
Series
p
IFAG IPC TD VLS
5
Rev. 2.4
12.06.2013
I
C
,
COLLECTOR CURRENT
0
V
1
V
2
V
3
V
0
A
3
A
6
A
9
A
1
2
A
1
5
A
1
5
V
7
V
9
V
1
1
V
1
3
V
V
G
E
=
2
0
V
I
C
,
COLLECTOR CURRENT
0
V
1
V
2
V
3
V
0
A
3
A
6
A
9
A
1
2
A
1
5
A
1
5
V
7
V
9
V
1
1
V
1
3
V
V
G
E
=
2
0
V
V
CE
,
COLLECTOR
-
EMITTER VO
LTAGE
V
CE
,
COLLECTOR
-
EMITTER VO
LTAGE
Figure
5
.
Typical output cha
racteristic
(
T
j
= 25°C)
Figure
6
.
Typical output cha
racteristic
(
T
j
= 175°C)
I
C
,
COLLECTOR CURRENT
0
V
2
V
4
V
6
V
8
V
1
0
V
0
A
3
A
6
A
9
A
1
2
A
1
5
A
2
5
°
C
T
J
=
1
7
5
°
C
V
CE(sat),
COLLECTOR
-
EMITT SA
TURATION VOLTAGE
-
5
0
°
C
0
°
C
5
0
°
C
1
0
0
°
C
0
,0
V
0
,5
V
1
,0
V
1
,5
V
2
,0
V
2
,5
V
I
C
=
6
A
I
C
=
1
2
A
I
C
=
3
A
V
GE
,
GATE-EMITTER
VOLTAGE
T
J
,
JUNCTION TEMPER
ATURE
Figure
7
.
Typical transfe
r characteristic
(V
CE
=20V)
Figure
8
.
Typical collecto
r
-
emitter
saturation voltag
e as a function
of
junction temperatu
re
(
V
GE
= 15V)
IKP06N60T
TrenchStop
®
Series
p
IFAG IPC TD VLS
6
Rev. 2.4
12.06.2013
t,
SWITCHING TIMES
0
A
3
A
6
A
9
A
1
2
A
1
5
A
1
n
s
1
0
n
s
1
0
0
n
s
t
r
t
d
(
o
n
)
t
f
t
d
(
o
ff
)
t,
SWITCHING TIMES
1
n
s
1
0
n
s
1
0
0
n
s
t
f
t
r
t
d(
of
f)
t
d
(o
n)
I
C
,
COLLECTOR CUR
RENT
R
G
,
GATE RESISTOR
Figure
9
.
Typical sw
itching times as a
function of co
llector current
(inductive load,
T
J
=175°C,
V
CE
= 400V, V
GE
= 0/15V,
R
G
= 23Ω,
Dynam
ic test circuit in Figure E)
Figure
10
.
Typical sw
itching times as a
function of g
ate resistor
(inductive load,
T
J
=175°C,
V
CE
= 400V, V
GE
= 0/15V,
I
C
= 6A,
Dynam
ic test circuit in Figure E)
t,
SWITCHING TIMES
5
0
°
C
1
0
0
°
C
1
5
0
°
C
1
n
s
1
0
n
s
1
0
0
n
s
t
r
t
f
t
d(
o
n
)
t
d
(
of
f
)
V
GE(th
)
,
GATE
-
EMITT TR
SHOLD VOLTAGE
-
5
0
°
C
0
°
C
5
0
°
C
1
0
0
°C
1
5
0
°
C
0
V
1
V
2
V
3
V
4
V
5
V
6
V
m
in
.
t
y
p
.
m
a
x
.
T
J
,
JUNCTION TEMPER
ATURE
T
J
,
JUNCTION TEMPER
ATURE
Figure
11
.
Typical sw
itching times as a
function of ju
nction temperature
(inductive load,
V
CE
= 400V,
V
GE
= 0/15V,
I
C
= 6A,
R
G
= 23Ω,
Dynam
ic test circuit in Figure E)
Figure
12
.
Gate
-
emitter threshold v
oltage as
a function of jun
ction temperature
(
I
C
= 0.18mA)
P1-P3
P4-P6
P7-P9
P10-P12
P13-P13
IKP06N60TXKSA1
Mfr. #:
Buy IKP06N60TXKSA1
Manufacturer:
Infineon Technologies
Description:
IGBT Transistors LOW LOSS DuoPack 600V 6A
Lifecycle:
New from this manufacturer.
Delivery:
DHL
FedEx
Ups
TNT
EMS
Payment:
T/T
Paypal
Visa
MoneyGram
Western
Union
Products related to this Datasheet
IKP06N60TXKSA1
