IKP06N60T
TrenchStop
®
Series p
IFAG IPC TD VLS
10 Rev. 2.4 12.06.2013
I
rr
, REVERSE RECOVERY CURRENT
200A/µs 400A/µs 600A/µs 800A/µs
0A
2A
4A
6A
8A
T
J
=25°C
T
J
=175°C
di
rr
/dt
,
DIODE PEAK RATE OF FALL
OF REVERSE RECOVERY
CURRENT
200A/µs 400A/µs 600A/µs 800As
0As
-100As
-200As
-300As
-400As
-500As
T
J
=25°C
T
J
=175°C
di
F
/dt, DIODE CURRENT SLOPE di
F
/dt, DIODE CURRENT SLOPE
Figure
25
.
Typical reverse recovery current
as a function of diode current
slope
(V
R
= 400V, I
F
= 6A,
Dynamic test circuit in Figure E)
Figure
26
.
Typical diode peak rate of fall of
reverse recovery current as a
function of diode current slope
(V
R
= 400V, I
F
= 6A,
Dynamic test circuit in Figure E)
I
F
, FORWARD CURRENT
0V 1V 2V
0A
2A
4A
6A
8A
10A
25°C
T
J
=175°C
V
F
, FORWARD VOLTAGE
0°C 50°C 100°C 150°C
0,0V
0,5V
1,0V
1,5V
2,0V
6A
I
F
=12A
3A
V
F
, FORWARD VOLTAGE T
J
, JUNCTION TEMPERATURE
Figure
27
.
Typical diode forward current as
a function of forward voltage
Figure
28
.
Typic
al diode forward voltage as a
function of junction temperature
IKP06N60T
TrenchStop
®
Series p
IFAG IPC TD VLS
11 Rev. 2.4 12.06.2013
PG-TO-220-3
IKP06N60T
TrenchStop
®
Series p
IFAG IPC TD VLS
12 Rev. 2.4 12.06.2013
I
r
r
m
90%
I
r r m
10%
I
r r m
di /dt
F
t
r r
I
F
i,v
t
Q
S
Q
F
t
S
t
F
V
R
di /dt
r r
Q =Q Q
r r S F
+
t =t t
r r S F
+
Figure C. Definition of diodes
switching characteristics
p(t)
1
2
n
T
(
t
)
j
1
1
2
2
n
n
T
C
r r
r
r
rr
Figure D. Thermal equivalent
circuit
Figure E. Dynamic test circuit
Leakage inductance L
=60nH
and Stray capacity C
=40pF.
Figure A. Definition of switching times
Figure B. Definition of switching losses

IKP06N60TXKSA1

Mfr. #:
Manufacturer:
Infineon Technologies
Description:
IGBT Transistors LOW LOSS DuoPack 600V 6A
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet