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IKP06N60TXKSA1

P1-P3P4-P6P7-P9P10-P12P13-P13
IKP06N60T
TrenchStop
®
Series p
IFAG IPC TD VLS
1 Rev. 2.4 12.06.2013
Low Loss DuoPack : IGBT in TrenchStop
®
and Fieldstop technology with soft,
fast recovery anti-parallel Emitter Controlled HE diode
Very low V
CE(sat)
1.5 V (typ.)
Maximum Junction Temperature 175 °C
Short circuit withstand time – 5s
Designed for :
- Variable Speed Drive for washing machines, air
conditioners and induction cooking
- Uninterrupted Power Supply
TrenchStop
®
and Fieldstop technology for 600 V applications
offers :
- very tight parameter distribution
- high ruggedness, temperature stable behaviour
Low EMI
Very soft, fast recovery anti-parallel Emitter Controlled HE diode
Qualified according to JEDEC
1
for target applications
Pb-free lead plating; RoHS compliant
Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
Type V
CE
I
C;Tc=100°C
V
CE(sat),Tj=25°C
T
j,max
Marking Package
IKP06N60T 600V 6A 1.5V
175C
K06T60 PG-TO-220-3-1
Maximum Ratings
Parameter Symbol Value Unit
Collector-emitter voltage
V
CE
600 V
DC collector current, limited by T
jmax
T
C
= 25C
T
C
= 100C
I
C
12
6
A
Pulsed collector current, t
p
limited by T
jmax
I
Cpul s
18
Turn off safe operating area
V
CE
600V, T
j
175C
-
18
Diode forward current, limited by T
jmax
T
C
= 25C
T
C
= 100C
I
F
12
6
Diode pulsed current, t
p
limited by T
jmax
I
Fp ul s
18
Gate-emitter voltage
V
GE
20
V
Short circuit withstand time
2)
V
GE
= 15V, V
CC
400V, T
j
150C
t
SC
5
s
Power dissipation
T
C
= 25C
P
tot
88 W
Operating junction temperature
T
j
-40...+175
C
Storage temperature
T
st g
-55...+175
Soldering temperature
wavesoldering, 1.6 mm (0.063 in.) from case for 10s
260
1
J-STD-020 and JESD-022
2)
Allowed number of short circuits: <1000; time between short circuits: >1s.
G
C
E
PG-TO-220-3-1
IKP06N60T
TrenchStop
®
Series p
IFAG IPC TD VLS
2 Rev. 2.4 12.06.2013
Thermal Resistance
Parameter Symbol Conditions Max. Value Unit
Characteristic
IGBT thermal resistance,
junction – case
R
thJ C
1.7 K/W
Diode thermal resistance,
junction – case
R
thJ C D
2.6
Thermal resistance,
junction – ambient
R
thJ A
62
Electrical Characteristic, at T
j
= 25 C, unless otherwise specified
Parameter Symbol Conditions
Value
Unit
min. typ. max.
Static Characteristic
Collector-emitter breakdown voltage
V
(BR ) C ES
V
GE
=0V,
I
C
=0.25mA
600 - - V
Collector-emitter saturation voltage
V
CE( s at)
V
GE
= 15V, I
C
=6A
T
j
=25C
T
j
=175C
-
-
1.5
1.8
2.05
Diode forward voltage
V
F
V
GE
=0V, I
F
=6A
T
j
=25C
T
j
=175C
-
-
1.6
1.6
2.05
-
Gate-emitter threshold voltage
V
GE( t h)
I
C
=0.18mA,
V
CE
=V
GE
4.1 4.6 5.7
Zero gate voltage collector current
I
CE S
V
CE
=600V,
V
GE
=0V
T
j
=25C
T
j
=175C
-
-
-
-
40
700
µA
Gate-emitter leakage current
I
GE S
V
CE
=0V,V
GE
=20V
- - 100 nA
Transconductance
g
fs
V
CE
=20V, I
C
=6A
- 3.6 - S
Integrated gate resistor
R
Gin t
none Ω
Dynamic Characteristic
Input capacitance
C
iss
V
CE
=25V,
V
GE
=0V,
f=1MHz
- 368 - pF
Output capacitance
C
os s
- 28 -
Reverse transfer capacitance
C
rs s
- 11 -
Gate charge
Q
Ga t e
V
CC
=480V, I
C
=6A
V
GE
=15V
- 42 - nC
Internal emitter inductance
measured 5mm (0.197 in.) from case
L
E
- 7 - nH
Short circuit collector current
1)
I
C( S C )
V
GE
=15V,t
SC
5s
V
CC
= 400V,
T
j
= 25C
- 55 - A
1)
Allowed number of short circuits: <1000; time between short circuits: >1s.
IKP06N60T
TrenchStop
®
Series p
IFAG IPC TD VLS
3 Rev. 2.4 12.06.2013
Switching Characteristic, Inductive Load, at T
j
=25 C
Parameter Symbol Conditions
Value
Unit
min. typ. max.
IGBT Characteristic
Turn-on delay time
t
d( o n )
T
j
=25C,
V
CC
=400V,I
C
=6A,
V
GE
=0/15V,
R
G
=23 ,
L
2)
=60nH,
C
2)
=40pF
Energy losses include
“tail” and diode
reverse recovery.
- 9 - ns
Rise time
t
r
- 6 -
Turn-off delay time
t
d( o f f)
- 130 -
Fall time
t
f
- 58 -
Turn-on energy
E
on
- 0.09 - mJ
Turn-off energy
E
off
- 0.11 -
Total switching energy
E
ts
- 0.2 -
Anti-Parallel Diode Characteristic
Diode reverse recovery time
t
rr
T
j
=25C,
V
R
=400V, I
F
=6A,
di
F
/dt=550A/s
- 123 - ns
Diode reverse recovery charge
Q
rr
- 190 - nC
Diode peak reverse recovery current
I
rr m
- 5.3 - A
Diode peak rate of fall of reverse
recovery current during t
b
di
rr
/dt
- 450 -
A/s
Switching Characteristic, Inductive Load, at T
j
=175 C
Parameter Symbol Conditions
Value
Unit
min. typ. max.
IGBT Characteristic
Turn-on delay time
t
d( o n )
T
j
=175C,
V
CC
=400V,I
C
=6A,
V
GE
=0/15V,
R
G
= 23
L
1)
=60nH,
C
1)
=40pF
Energy losses include
“tail” and diode
reverse recovery.
- 9 - ns
Rise time
t
r
- 8 -
Turn-off delay time
t
d( o f f)
- 165 -
Fall time
t
f
- 84 -
Turn-on energy
E
on
- 0.14 - mJ
Turn-off energy
E
off
- 0.18 -
Total switching energy
E
ts
- 0.335 -
Anti-Parallel Diode Characteristic
Diode reverse recovery time
t
rr
T
j
=175C
V
R
=400V, I
F
=6A,
di
F
/dt=550A/s
- 180 - ns
Diode reverse recovery charge
Q
rr
- 500 - nC
Diode peak reverse recovery current
I
rr m
- 7.6 - A
Diode peak rate of fall of reverse
recovery current during t
b
di
rr
/dt
- 285 -
A/s
2)
Leakage inductance L
and Stray capacity C
due to dynamic test circuit in Figure E.
1)
Leakage inductance L
and Stray capacity C
due to dynamic test circuit in Figure E.
P1-P3P4-P6P7-P9P10-P12P13-P13

IKP06N60TXKSA1

Mfr. #:
Buy IKP06N60TXKSA1
Manufacturer:
Infineon Technologies
Description:
IGBT Transistors LOW LOSS DuoPack 600V 6A
Lifecycle:
New from this manufacturer.
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