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SUG90090E-GE3

SUG90090E-GE3
Mfr. #:
SUG90090E-GE3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET 200V Vds ThunderFET 100A Id +/-20V Vgs
Lifecycle:
New from this manufacturer.
Datasheet:
SUG90090E-GE3 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SUG90090E-GE3 DatasheetSUG90090E-GE3 Datasheet (P4-P6)SUG90090E-GE3 Datasheet (P7-P8)
ECAD Model:
Product Attribute
Attribute Value
Manufacturer:
Vishay
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
Through Hole
Package / Case:
TO-247-3
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
200 V
Id - Continuous Drain Current:
100 A
Rds On - Drain-Source Resistance:
7.9 mOhms
Vgs th - Gate-Source Threshold Voltage:
2 V
Vgs - Gate-Source Voltage:
20 V
Qg - Gate Charge:
129 nC
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 175 C
Pd - Power Dissipation:
395 W
Configuration:
Single
Channel Mode:
Enhancement
Packaging:
Tube
Transistor Type:
1 N-Channel
Brand:
Vishay / Siliconix
Forward Transconductance - Min:
54 S
Fall Time:
40 ns
Product Type:
MOSFET
Rise Time:
44 ns
Factory Pack Quantity:
500
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
60 ns
Typical Turn-On Delay Time:
18 ns
Unit Weight:
0.211644 oz
Tags
SUG
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Part # Mfg. Description Stock Price
SUG90090E-GE3
DISTI # V36:1790_17597434		Vishay IntertechnologiesN-Channel 200 V (D-S) 175C MOSFET0
    SUG90090E-GE3
    DISTI # SUG90090E-GE3TR-ND    		Vishay SiliconixMOSFET N-CH 200V 100A TO247AC
    RoHS: Compliant
    Min Qty: 500
    Container: Tape & Reel (TR)    		On Order
    • 2500:$2.2113
    • 1000:$2.3219
    • 500:$2.7531
    SUG90090E-GE3
    DISTI # SUG90090E-GE3CT-ND    		Vishay SiliconixMOSFET N-CH 200V 100A TO247AC
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)    		Temporarily Out of Stock
    • 100:$3.3311
    • 10:$4.0660
    • 1:$4.5300
    SUG90090E-GE3
    DISTI # SUG90090E-GE3    		Vishay IntertechnologiesMOSFET N-Channel 200V 100A 3-Pin TO-247 - Tape and Reel (Alt: SUG90090E-GE3)
    RoHS: Not Compliant
    Min Qty: 500
    Container: Reel    		Americas - 0
    • 3000:$1.9900
    • 5000:$1.9900
    • 2000:$2.0900
    • 500:$2.1900
    • 1000:$2.1900
    SUG90090E-GE3
    DISTI # 15AC8717    		Vishay IntertechnologiesMOSFET, N-CH, 200V, 100A, TO-247,Transistor Polarity:N Channel,Continuous Drain Current Id:100A,Drain Source Voltage Vds:200V,On Resistance Rds(on):0.0079ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V,Power RoHS Compliant: Yes1031
    • 500:$2.6600
    • 100:$3.0500
    • 50:$3.2700
    • 25:$3.4900
    • 10:$3.7100
    • 1:$4.4700
    SUG90090E-GE3
    DISTI # 78-SUG90090E-GE3    		Vishay IntertechnologiesMOSFET 200V Vds ThunderFET 100A Id +/-20V Vgs
    RoHS: Compliant    		410
    • 1:$4.4200
    • 10:$3.6600
    • 100:$3.0100
    • 250:$2.9200
    • 500:$2.6200
    • 1000:$2.2100
    • 2500:$2.1000
    SUG90090E-GE3
    DISTI # 2747695    		Vishay IntertechnologiesMOSFET, N-CH, 200V, 100A, TO-247
    RoHS: Compliant    		1031
    • 100:$5.6000
    • 10:$6.8400
    • 1:$7.6400
    SUG90090E-GE3
    DISTI # 2747695    		Vishay IntertechnologiesMOSFET, N-CH, 200V, 100A, TO-2471096
    • 100:£2.7900
    • 10:£3.3800
    • 1:£4.5500
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    Availability
    Stock:
    Available
    On Order:
    4500
    Enter Quantity:
    Current price of SUG90090E-GE3 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
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