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STGFW30H65FB

STGFW30H65FB
Mfr. #:
STGFW30H65FB
Manufacturer:
STMicroelectronics
Description:
IGBT Transistors Trench gate field-stop IGBT, HB series 650 V, 30 A high speed
Lifecycle:
New from this manufacturer.
Datasheet:
STGFW30H65FB Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:
STGFW30H65FB more Information STGFW30H65FB Product Details
Product Attribute
Attribute Value
Manufacturer:
STMicroelectronics
Product Category:
IGBT Transistors
RoHS:
Y
Technology:
Si
Package / Case:
TO-3PF
Mounting Style:
Through Hole
Configuration:
Single
Collector- Emitter Voltage VCEO Max:
650 V
Collector-Emitter Saturation Voltage:
1.55 V
Maximum Gate Emitter Voltage:
20 V
Continuous Collector Current at 25 C:
60 A
Pd - Power Dissipation:
58 W
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 175 C
Series:
STGFW30H65FB
Packaging:
Tube
Continuous Collector Current Ic Max:
30 A
Brand:
STMicroelectronics
Gate-Emitter Leakage Current:
250 nA
Product Type:
IGBT Transistors
Factory Pack Quantity:
300
Subcategory:
IGBTs
Unit Weight:
0.245577 oz
Tags
STGFW30, STGFW3, STGFW, STGF, STG
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans IGBT Chip N-CH 650V 60A 58000mW 3-Pin(3+Tab) TO-3PF Tube
***icroelectronics
Trench gate field-stop IGBT, HB series 650 V, 30 A high speed
***SIT Distribution GmbH
Insulated Gate Bipolar Transistor, 60A I(C), 650V V(BR)CES, N-Channel
***S
French Electronic Distributor since 1988
***ure Electronics
STGP30M65DF2: 650 V 60 A 258 W Trench Gate Field-Stop IGBT - TO-220AB
***ical
Trans IGBT Chip N-CH 650V 60A 258000mW 3-Pin(3+Tab) TO-220AB Tube
***SIT Distribution GmbH
Insulated Gate Bipolar Transistor, 60A I(C), 650V V(BR)CES, N-Channel, TO-220AB
***el Electronic
STMICROELECTRONICS STGP30M65DF2 IGBT Single Transistor, 60 A, 1.55 V, 258 W, 650 V, TO-220, 3 Pins
***nell
IGBT, SINGLE, 650V, 60A, TO-220-3; DC Collector Current: 60A; Collector Emitter Saturation Voltage Vce(on): 1.55V; Power Dissipation Pd: 258W; Collector Emitter Voltage V(br)ceo: 650V; Transistor Case Style: TO-220; No. of Pi
***ark
Igbt Single Transistor, 60 A, 1.55 V, 258 W, 650 V, To-247, 3 Rohs Compliant: Yes
***ical
Trans IGBT Chip N-CH 650V 60A 258000mW 3-Pin(3+Tab) TO-247 Tube
***icroelectronics
Trench gate field-stop IGBT M series, 650 V 30 A low loss
***nell
IGBT, SINGLE, 650V, 60A, TO-247-3; DC Collector Current: 60A; Collector Emitter Saturation Voltage Vce(on): 1.55V; Power Dissipation Pd: 258W; Collector Emitter Voltage V(br)ceo: 650V; Transistor Case Style: TO-247; No. of Pi
***icroelectronics
Trench gate field-stop IGBT, HB series 600 V, 30 A high speed
***ical
Trans IGBT Chip N-CH 600V 60A 260W 3-Pin(3+Tab) TO-3P Tube
***ark
Transistor, Igbt, 600V, 60A, To-3P Rohs Compliant: Yes
***r Electronics
Insulated Gate Bipolar Transistor, 60A I(C), 600V V(BR)CES, N-Channel
***(Formerly Allied Electronics)
IGBT 600V 30A Trench Field-Stop TO-3P
***ure Electronics
NGTB Series 650 V 60 A Flange Mount Trench Field Stop IGBT - TO-247
***et
Trans IGBT Chip N-CH 650V 60A 3-Pin TO-247 Tube
***emi
IGBT, 650V 30A FS2 Induction Heating
***ark
650V/30A FAST IGBT FSII TO-247 / TUBE ROHS COMPLIANT: YES
***r Electronics
Insulated Gate Bipolar Transistor, 60A I(C), 650V V(BR)CES, N-Channel
***i-Key
IGBT TRENCH/FS 650V 60A TO247-3
***ical
Trans IGBT Chip N-CH 650V 60A 250000mW 3-Pin(3+Tab) TO-247AC Tube
***-Wing Technology
Tube Through Hole ROHS3Compliant IGBT Transistor 2V @ 15V 24A 60A 250W 170ns
***nell
IGBT, SINGLE, N-CH, 650V, 60A, TO-247AC; DC Collector Current: 60A; Collector Emitter Saturation Voltage Vce(on): 1.7V; Power Dissipation Pd: 250W; Collector Emitter Voltage V(br)ceo: 650V; Transistor Case Style: TO-247AC; No
***ineon
Benefits: Low VCE(ON) and Switching Losses; 5.5s Short Circuit SOA; Square RBSOA; Maximum Junction Temperature 175C; Positive VCE(ON) Temperature Coefficient; Lead-Free, RoHs compliant
***ical
Trans IGBT Chip N-CH 650V 60A 250000mW 3-Pin(3+Tab) TO-247AC Tube
***SIT Distribution GmbH
Insulated Gate Bipolar Transistor, 60A I(C), 650V V(BR)CES, N-Channel
***ark
IGBT, SINGLE, 650V, 60A, TO-247AC
***ineon
Target Applications: Pump; Solar; UPS; Welding
***ment14 APAC
TRANSISTOR, BIPOLAR, N CHANNEL, 650V, TO-247AC
***or
IGBT W/ULTRAFAST SOFT RECOVERY D
***S
French Electronic Distributor since 1988
IGBT HB/HB2 Series
STMicroelectronics IGBT HB/HB2 Series IGBTs combine a very low saturation voltage (down to 1.6V) with a minimal collector current turn-off tail and a maximum operating temperature of 175°C. This enhances the efficiency of high-frequency applications (up to 100kHz) and leverages the advanced proprietary trench gate field-stop (TGFS) structure.
Part # Mfg. Description Stock Price
STGFW30H65FB
DISTI # 497-15123-5-ND		STMicroelectronicsIGBT 650V 60A 58W TO3PF
RoHS: Compliant
Min Qty: 1
Container: Tube		291In Stock
  • 1020:$1.8081
  • 510:$2.1439
  • 120:$2.5184
  • 30:$2.9060
  • 1:$3.4200
STGFW30H65FB
DISTI # STGFW30H65FB		STMicroelectronicsTrans IGBT Chip N-CH 650V 60A 3-Pin TO-3PF Tube - Rail/Tube (Alt: STGFW30H65FB)
RoHS: Compliant
Min Qty: 600
Container: Tube		Americas - 0
  • 600:$1.7900
  • 1200:$1.6900
  • 1800:$1.5900
  • 3000:$1.5900
  • 6000:$1.4900
STGFW30H65FB
DISTI # STGFW30H65FB		STMicroelectronicsTrans IGBT Chip N-CH 650V 60A 3-Pin TO-3PF Tube (Alt: STGFW30H65FB)
RoHS: Compliant
Min Qty: 30
Container: Tube		Europe - 0
  • 30:€1.6900
  • 60:€1.6900
  • 120:€1.5900
  • 180:€1.4900
  • 300:€1.3900
STGFW30H65FB
DISTI # 511-STGFW30H65FB		STMicroelectronicsIGBT Transistors Trench gate field-stop IGBT, HB series 650 V, 30 A high speed
RoHS: Compliant		0
  • 600:$2.0400
  • 1200:$1.7200
  • 3000:$1.6300
STGFW30H65FBSTMicroelectronics 300
    STGFW30H65FB
    DISTI # IGBT1872    		STMicroelectronicsIGBT 650V 30A TO-3PFStock DE - 0Stock HK - 0Stock US - 0
    • 600:$1.8200
    STGFW30H65FBSTMicroelectronicsInsulated Gate Bipolar Transistor
    RoHS: Compliant    		Europe - 600
      Image Part # Description
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      Mfr.#: STGFW30V60DF

      OMO.#: OMO-STGFW30V60DF

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      STGFW30V60F

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      		 IGBT Transistors 600V 30A Hi Spd TrenchGate FieldStop
      STGFW30H65FB

      Mfr.#: STGFW30H65FB

      OMO.#: OMO-STGFW30H65FB

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      		 IGBT Transistors 40 A 600V Very Fast High Freq 50KHz IGBT
      STGFW30H65FB

      Mfr.#: STGFW30H65FB

      OMO.#: OMO-STGFW30H65FB-STMICROELECTRONICS

      		 IGBT Transistors IGBT & Power Bipola
      STGFW30V60DF

      Mfr.#: STGFW30V60DF

      OMO.#: OMO-STGFW30V60DF-STMICROELECTRONICS

      		 IGBT Transistors IGBT & Power Bipola
      STGFW30V60F

      Mfr.#: STGFW30V60F

      OMO.#: OMO-STGFW30V60F-STMICROELECTRONICS

      		 IGBT Transistors 600V 30A Hi Spd TrenchGate FieldStop
      Availability
      Stock:
      Available
      On Order:
      4000
      Enter Quantity:
      Current price of STGFW30H65FB is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
      Reference price (USD)
      Quantity
      Unit Price
      Ext. Price
      600
      $2.04
      $1 224.00
      1200
      $1.72
      $2 064.00
      2700
      $1.63
      $4 401.00
      5100
      $1.57
      $8 007.00
      Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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