FDFMA3N109

FDFMA3N109
Mfr. #:
FDFMA3N109
Manufacturer:
ON Semiconductor / Fairchild
Description:
MOSFET PowerTrench MOSFET and Schottky Diode
Lifecycle:
New from this manufacturer.
Datasheet:
FDFMA3N109 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Product Attribute
Attribute Value
Manufacturer:
ON Semiconductor
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
SMD/SMT
Package / Case:
MicroFET-6
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
30 V
Id - Continuous Drain Current:
2.9 A
Rds On - Drain-Source Resistance:
123 mOhms
Vgs - Gate-Source Voltage:
12 V
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
1.5 W
Configuration:
Single
Channel Mode:
Enhancement
Tradename:
PowerTrench
Packaging:
Reel
Height:
0.75 mm
Length:
2 mm
Product:
MOSFET Small Signal
Series:
FDFMA3N109
Transistor Type:
1 N-Channel
Width:
2 mm
Brand:
ON Semiconductor / Fairchild
Fall Time:
8 ns
Product Type:
MOSFET
Rise Time:
8 ns
Factory Pack Quantity:
3000
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
12 ns
Typical Turn-On Delay Time:
6 ns
Unit Weight:
0.002116 oz
Tags
FDFMA3, FDFMA, FDFM, FDF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Semiconductor
Integrated N-Channel PowerTrench®MOSFET and Schottky Diode 30 V, 2.9 A, 123 mΩ
***ment14 APAC
MOSFET, N, MLP6; Transistor Polarity:N Channel; Continuous Drain Current Id:2.9A; Drain Source Voltage Vds:30V; On Resistance Rds(on):123mohm; Rds(on) Test Voltage Vgs:1V; Threshold Voltage Vgs Typ:1V; Power Dissipation Pd:1.5W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:MicroFET; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:2.9A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-55°C; Package / Case:MLP-6; Power Dissipation Pd:1.5W; Power Dissipation Pd:1.5W; Pulse Current Idm:10A; SMD Marking:109; Termination Type:SMD; Voltage Vds:30V; Voltage Vds Typ:30V; Voltage Vgs Max:12V; Voltage Vgs Rds on Measurement:4.5V
***rchild Semiconductor
This device is designed specifically as a single package solution for a boost topology in cellular handset and other ultra-portable applications. It features a MOSFET with low input capacitance, total gate charge and onstate resistance, and an independently connected schottky diode with low forward voltage and reverse leakage current to maximize boost efficiency. The MicroFET 2x2 package offers exceptional thermal performance for its physical size and is well suited to switching and linear mode applications.
Part # Mfg. Description Stock Price
FDFMA3N109
DISTI # V72:2272_06337763
ON Semiconductor30V,2.9A ,INTEGRATED, NCH POWE1923
  • 1000:$0.2692
  • 500:$0.2990
  • 250:$0.3323
  • 100:$0.3693
  • 25:$0.5657
  • 10:$0.5666
  • 1:$0.6695
FDFMA3N109
DISTI # FDFMA3N109FSCT-ND
ON SemiconductorMOSFET N-CH 30V 2.9A MICRO2X2
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
21130In Stock
  • 1000:$0.3586
  • 500:$0.4482
  • 100:$0.6051
  • 10:$0.7840
  • 1:$0.9000
FDFMA3N109
DISTI # FDFMA3N109FSDKR-ND
ON SemiconductorMOSFET N-CH 30V 2.9A MICRO2X2
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
21130In Stock
  • 1000:$0.3586
  • 500:$0.4482
  • 100:$0.6051
  • 10:$0.7840
  • 1:$0.9000
FDFMA3N109
DISTI # FDFMA3N109FSTR-ND
ON SemiconductorMOSFET N-CH 30V 2.9A MICRO2X2
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)
21000In Stock
  • 3000:$0.3155
FDFMA3N109
DISTI # 25745010
ON Semiconductor30V,2.9A ,INTEGRATED, NCH POWE1923
  • 1000:$0.2692
  • 500:$0.2990
  • 250:$0.3323
  • 100:$0.3693
  • 29:$0.5657
FDFMA3N109
DISTI # FDFMA3N109
ON SemiconductorTrans MOSFET N-CH 30V 2.9A 6-Pin MicroFET T/R (Alt: FDFMA3N109)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel
Europe - 0
  • 3000:€0.3319
  • 6000:€0.2719
  • 12000:€0.2489
  • 18000:€0.2299
  • 30000:€0.2129
FDFMA3N109
DISTI # FDFMA3N109
ON SemiconductorTrans MOSFET N-CH 30V 2.9A 6-Pin MicroFET T/R - Tape and Reel (Alt: FDFMA3N109)
RoHS: Compliant
Min Qty: 3000
Container: Reel
Americas - 0
  • 3000:$0.2359
  • 6000:$0.2339
  • 12000:$0.2309
  • 18000:$0.2279
  • 30000:$0.2219
FDFMA3N109
DISTI # 04M9094
ON SemiconductorTRANSISTOR ARRAY, FULL REEL,Transistor Polarity:N Channel + Schottky,Continuous Drain Current Id:2.9A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.075ohm,Rds(on) Test Voltage Vgs:4.5V,Threshold Voltage Vgs:1V RoHS Compliant: Yes0
  • 1:$0.2670
  • 9000:$0.2580
  • 24000:$0.2480
FDFMA3N109Fairchild Semiconductor CorporationSmall Signal Field-Effect Transistor, 2.9A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
RoHS: Compliant
75450
  • 1000:$0.3800
  • 500:$0.4000
  • 100:$0.4200
  • 25:$0.4400
  • 1:$0.4700
FDFMA3N109
DISTI # 512-FDFMA3N109
ON SemiconductorMOSFET PowerTrench MOSFET and Schottky Diode
RoHS: Compliant
5668
  • 1:$0.7400
  • 10:$0.6140
  • 100:$0.3960
  • 1000:$0.3170
  • 3000:$0.2680
  • 9000:$0.2580
  • 24000:$0.2480
FDFMA3N109
DISTI # 1324787RL
ON SemiconductorMOSFET, N, MLP6
RoHS: Compliant
0
  • 1:$1.1800
  • 10:$0.9720
  • 100:$0.6270
  • 1000:$0.5020
  • 3000:$0.4250
  • 9000:$0.4090
  • 24000:$0.3930
  • 45000:$0.3870
FDFMA3N109
DISTI # 1324787
ON SemiconductorMOSFET, N, MLP6
RoHS: Compliant
0
  • 1:$1.1800
  • 10:$0.9720
  • 100:$0.6270
  • 1000:$0.5020
  • 3000:$0.4250
  • 9000:$0.4090
  • 24000:$0.3930
  • 45000:$0.3870
FDFMA3N109
DISTI # C1S541901518927
ON SemiconductorTrans MOSFET N-CH 30V 2.9A 6-Pin MLP EP T/R
RoHS: Compliant
1923
  • 250:$0.3323
  • 100:$0.3693
  • 25:$0.5657
  • 10:$0.5666
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Mfr.#: TLP183(YH-TPL,E

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SI2308CDS-T1-GE3

Mfr.#: SI2308CDS-T1-GE3

OMO.#: OMO-SI2308CDS-T1-GE3-VISHAY

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Mfr.#: TLP183(YH-TPL,E

OMO.#: OMO-TLP183-YH-TPL-E-TOSHIBA-SEMICONDUCTOR-AND-STOR

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Availability
Stock:
Available
On Order:
1988
Enter Quantity:
Current price of FDFMA3N109 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Reference price (USD)
Quantity
Unit Price
Ext. Price
1
$0.74
$0.74
10
$0.61
$6.14
100
$0.40
$39.60
1000
$0.32
$317.00
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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