IRFU120ATU

Mfr. #:: IRFU120ATU
Manufacturer:: ON Semiconductor / Fairchild
Description:: MOSFET 100V Single
Lifecycle:: New from this manufacturer.
Datasheet:: IRFU120ATU Datasheet
Delivery:: DHL FedEx Ups TNT EMS
Payment:: T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:: IRFU120ATU Datasheet IRFU120ATU Datasheet (P4-P6)IRFU120ATU Datasheet (P7)
ECAD Model:

Product Attribute
Attribute Value

Manufacturer:: ON Semiconductor

Product Category:: MOSFET

RoHS:: E

Technology:: Si

Mounting Style:: Through Hole

Package / Case:: TO-220-3

Number of Channels:: 1 Channel

Transistor Polarity:: N-Channel

Vds - Drain-Source Breakdown Voltage:: 100 V

Id - Continuous Drain Current:: 8.4 A

Rds On - Drain-Source Resistance:: 200 mOhms

Vgs - Gate-Source Voltage:: 20 V

Minimum Operating Temperature:: - 55 C

Maximum Operating Temperature:: + 150 C

Pd - Power Dissipation:: 32 W

Configuration:: Single

Channel Mode:: Enhancement

Packaging:: Tube

Height:: 16.3 mm

Length:: 10.67 mm

Transistor Type:: 1 N-Channel

Type:: MOSFET

Width:: 4.7 mm

Brand:: ON Semiconductor / Fairchild

Forward Transconductance - Min:: 4.3 S

Fall Time:: 28 ns

Product Type:: MOSFET

Rise Time:: 14 ns

Factory Pack Quantity:: 70

Subcategory:: MOSFETs

Typical Turn-Off Delay Time:: 36 ns

Typical Turn-On Delay Time:: 14 ns

Part # Aliases:: IRFU120ATU_NL

Unit Weight:: 0.139332 oz

Tags: IRFU120, IRFU12, IRFU1, IRFU, IRF

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IRFU120ATU Description

***-Wing Technology: Tube Through Hole N-Channel Single Mosfet Transistor 8.4A Tc 8.4A 32W 28ns

***Yang: Trans MOSFET N-CH 100V 8.4A 3-Pin(3+Tab) IPAK Rail - Bulk

***inecomponents.com: N-CH/100V/8.4A/0.2OHM/Substitute of IRFU120TU & IRFU120A

***ark: MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:100V; Continuous Drain Current, Id:8.4A; On Resistance, Rds(on):200mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:I-PAK ;RoHS Compliant: Yes

***emi: Power MOSFET, N-Channel, Logic Level, QFET®, 100 V, 10 A, 180 mΩ, IPAK

***ark: MOSFET Transistor, N Channel, 10 A, 100 V, 0.142 ohm, 10 V, 2 V

***r Electronics: Power Field-Effect Transistor, 10A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251

***nell: MOSFET, N CH, 100V, 10A, TO-251AA-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 10A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.142ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2V;

***rchild Semiconductor: This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.

***(Formerly Allied Electronics): MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.185Ohm;ID 10A;I-Pak (TO-251AA);PD 48W

***ure Electronics: Single N-Channel 100 V 0.265 Ohm 20 nC HEXFET® Power Mosfet - TO-251AA

***ineon SCT: 100V Single N-Channel HEXFET Power MOSFET in a I-Pak package, IPAK-3, RoHS

*** Stop Electro: Power Field-Effect Transistor, 10A I(D), 100V, 0.225ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA

***trelec: MOSFET Operating temperature: -55...175 °C Drive: logic level Housing type: IPAK Polarity: N Variants: Enhancement mode Power dissipation: 48 W

***ineon: Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature; Logic Level

***ment14 APAC: MOSFET, N, 100V, 11A, I-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:10A; Drain Source Voltage Vds:100V; On Resistance Rds(on):185mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2V; Power Dissipation Pd:48W; Transistor Case Style:I-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:I-PAK; Current Id Max:10A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Junction to Case Thermal Resistance A:3.2°C/W; On State resistance @ Vgs = 10V:185mohm; Package / Case:IPAK; Power Dissipation Pd:48W; Power Dissipation Pd:48W; Pulse Current Idm:35A; Termination Type:Through Hole; Voltage Vds:100V; Voltage Vds Typ:100V; Voltage Vgs Max:2V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2V

***ical: Trans MOSFET N-CH 100V 10A 3-Pin (3+Tab) TO-251 Rail

***ser: MOSFETs 10a,100V, 0.165 Ohm 1Ch HS Logic Gate

***ter Electronics: PWR MOS 100V/11A/0.178 OHM N-CH LOGIC LVL TO-251AA

***S.I.T. Europe - USA - Asia: Power Field-Effect Transistor, 10A I(D), 100V, 0.168ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA

***eco: ADDED FOR DPP(INTERSIL) PKG ID CHANGE

***(Formerly Allied Electronics): MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.21Ohm;ID 9.4A;I-Pak (TO-251AA);PD 48W

***ure Electronics: Single N-Channel 100 V 0.21 Ohm 25 nC HEXFET® Power Mosfet - TO-251AA

***ineon SCT: 100V Single N-Channel HEXFET Power MOSFET in a I-Pak package, IPAK-3, RoHS

***S.I.T. Europe - USA - Asia: Power Field-Effect Transistor, 9.1A I(D), 100V, 0.21ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA

***ineon: Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature

***ark: N Channel Mosfet, 100V, 9.4A, Ipak; Transistor Polarity:n Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:9.4A; On Resistance Rds(On):0.21Ohm; Transistor Mounting:through Hole; Rds(On) Test Voltage Vgs:10V; Msl:- Rohs Compliant: Yes

***trelec: Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 9.4 / Drain-Source Voltage (Vds) V = 100 / ON Resistance (Rds(on)) mOhm = 210 / Gate-Source Voltage V = 20 / Fall Time ns = 23 / Rise Time ns = 23 / Turn-OFF Delay Time ns = 32 / Turn-ON Delay Time ns = 4.5 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-251 / Pins = 3 / Mounting Type = Through Hole / Packaging = Tube / Power Dissipation (Pd) W = 48

***ment14 APAC: MOSFET, N, 100V, 9.1A, I-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:9.4A; Drain Source Voltage Vds:100V; On Resistance Rds(on):210mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:48W; Transistor Case Style:I-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:I-PAK; Current Id Max:9.4A; Current Temperature:25°C; Fall Time tf:23ns; Full Power Rating Temperature:25°C; Junction to Case Thermal Resistance A:3.2°C/W; Package / Case:IPAK; Power Dissipation Pd:48W; Power Dissipation Pd:48W; Pulse Current Idm:38A; Rise Time:23ns; SMD Marking:IRFU120N; Termination Type:Through Hole; Turn Off Time:32ns; Turn On Time:4.5ns; Voltage Vds:100V; Voltage Vds Typ:100V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V

***icroelectronics: N-channel 100 V, 0.22 Ω, 6 A, DPAK, IPAK low gate charge STripFET͐2;2; Power MOSFET

*** Source Electronics: Trans MOSFET N-CH 100V 6A 3-Pin(3+Tab) IPAK Tube / MOSFET N-CH 100V 6A IPAK

***r Electronics: Power Field-Effect Transistor, 6A I(D), 100V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA

***ure Electronics: Single N-Channel 100 V 0.27 Ohms Through Hole Power Mosfet - IPAK (TO-251)

***ark: N Channel Mosfet, 100V, 7.7A, Ipak; Transistor Polarity:n Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:7.7A; On Resistance Rds(On):0.27Ohm; Transistor Mounting:through Hole; Rds(On) Test Voltage Vgs:10V; Msl:- Rohs Compliant: No

*** Stop Electro: Power Field-Effect Transistor, 7.7A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA

Market price

Part #	Mfg.	Description	Stock	Price
IRFU120ATU DISTI # IRFU120ATU-ND	ON Semiconductor	MOSFET N-CH 100V 8.4A IPAK RoHS: Compliant Min Qty: 5040 Container: Tube	Limited Supply - Call
IRFU120ATU DISTI # 512-IRFU120ATU	ON Semiconductor	MOSFET 100V Single RoHS: Compliant	0
IRFU120ATU	Fairchild Semiconductor Corporation	Power Field-Effect Transistor, 8.4A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251 RoHS: Compliant	2580	1000:$0.9100 500:$0.9600 100:$1.0000 25:$1.0400 1:$1.1200

Image	Part #	Description
	Mfr.#: IRFU13N20DPBF OMO.#: OMO-IRFU13N20DPBF	MOSFET MOSFT 200V 13A 235mOhm 25nC
	Mfr.#: IRFU1205PBF OMO.#: OMO-IRFU1205PBF	MOSFET MOSFT 55V 37A 27mOhm 43.3nC
	Mfr.#: IRFU110 OMO.#: OMO-IRFU110	MOSFET RECOMMENDED ALT 844-IRFU110PBF
	Mfr.#: IRFU120ATU OMO.#: OMO-IRFU120ATU	MOSFET 100V Single
	Mfr.#: IRFU120_R4941 OMO.#: OMO-IRFU120-R4941-ON-SEMICONDUCTOR	MOSFET N-CH 100V 8.4A I-PAK
	Mfr.#: IRFU12N25DPBF OMO.#: OMO-IRFU12N25DPBF-INFINEON-TECHNOLOGIES	MOSFET N-CH 250V 14A I-PAK
	Mfr.#: IRFU110-IR OMO.#: OMO-IRFU110-IR-1190	New and Original
	Mfr.#: IRFU120 OMO.#: OMO-IRFU120-VISHAY	MOSFET N-CH 100V 7.7A I-PAK
	Mfr.#: IRFU120PBF OMO.#: OMO-IRFU120PBF-VISHAY	MOSFET N-CH 100V 7.7A I-PAK
	Mfr.#: IRFU1N60APBF OMO.#: OMO-IRFU1N60APBF-VISHAY	MOSFET N-CH 600V 1.4A I-PAK

IRFU120ATU

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes