STB180N55F3

Product Attribute

Attribute Value

Manufacturer:

STMicroelectronics

Product Category:

MOSFET

RoHS:

Y

Technology:

Si

Mounting Style:

SMD/SMT

Package / Case:

TO-263-3

Number of Channels:

1 Channel

Transistor Polarity:

N-Channel

Vds - Drain-Source Breakdown Voltage:

55 V

Id - Continuous Drain Current:

120 A

Rds On - Drain-Source Resistance:

3.5 mOhms

Vgs - Gate-Source Voltage:

20 V

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 175 C

Pd - Power Dissipation:

330 W

Configuration:

Single

Channel Mode:

Enhancement

Packaging:

Reel

Height:

4.6 mm

Length:

10.4 mm

Series:

STB180N55F3

Transistor Type:

1 N-Channel

Width:

9.35 mm

Brand:

STMicroelectronics

Fall Time:

50 ns

Product Type:

MOSFET

Rise Time:

150 ns

Factory Pack Quantity:

1000

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

110 ns

Typical Turn-On Delay Time:

25 ns

Unit Weight:

0.139332 oz

Tags

STB18, STB1, STB