IPL65R190E6AUMA1

Mfr. #:: IPL65R190E6AUMA1
Manufacturer:: Infineon Technologies
Description:: MOSFET N-Ch 650V 20.2A VSON-4
Lifecycle:: New from this manufacturer.
Datasheet:: IPL65R190E6AUMA1 Datasheet
Delivery:: DHL FedEx Ups TNT EMS
Payment:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

Product Attribute
Attribute Value

Manufacturer:: Infineon

Product Category:: MOSFET

RoHS:: Y

Technology:: Si

Mounting Style:: SMD/SMT

Package / Case:: VSON-4

Number of Channels:: 1 Channel

Transistor Polarity:: N-Channel

Vds - Drain-Source Breakdown Voltage:: 650 V

Id - Continuous Drain Current:: 20.2 A

Rds On - Drain-Source Resistance:: 190 mOhms

Vgs th - Gate-Source Threshold Voltage:: 3 V

Vgs - Gate-Source Voltage:: 20 V

Qg - Gate Charge:: 73 nC

Minimum Operating Temperature:: - 40 C

Maximum Operating Temperature:: + 150 C

Pd - Power Dissipation:: 151 W

Configuration:: Single

Channel Mode:: Enhancement

Tradename:: CoolMOS

Packaging:: Reel

Height:: 1.1 mm

Length:: 8 mm

Series:: CoolMOS E6

Transistor Type:: 1 N-Channel

Width:: 8 mm

Brand:: Infineon Technologies

Fall Time:: 10 ns

Product Type:: MOSFET

Rise Time:: 11 ns

Factory Pack Quantity:: 3000

Subcategory:: MOSFETs

Typical Turn-Off Delay Time:: 112 ns

Typical Turn-On Delay Time:: 12 ns

Part # Aliases:: IPL65R190E6AUMA1 SP001074938

Tags: IPL65R19, IPL65R1, IPL65R, IPL65, IPL6, IPL

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IPL65R190E6AUMA1 Description

***ical: Trans MOSFET N-CH 650V 20.2A 5-Pin Thin-PAK T/R

***ineon SCT: CoolMOS™ E6 combines Infineon's experience as the leading superjunction MOSFET supplier with best-in-class innovation, PG-VSON-4, RoHS

***ineon: CoolMOS E6 combines Infineon's experience as the leading superjunction MOSFET supplier with best-in-class innovation. The offered devices provide all benefits of a fast switching SJ MOSFET while not sacrificing ease-of-use. Extremely low switching and conduction losses make switching applications even more efficient, compact, lighter and cooler. | Summary of Features: Easy control of switching behavior; Very high commutation ruggedness; Extremely low losses due to very low Figure of Merit (R DS(ON)*Q g) and E oss); Easy to use; Better light load efficiency compared to C3; Outstanding reliability with proven CoolMOS quality combined with high body diode ruggedness; Better price performance in comparison to previous CoolMOS generations; More efficient, more compact, lighter and cooler | Benefits: Improved power density; Improved reliability; General purpose part can be used in both soft and hard switching topologies; Better light load effciency; Improved effciency in hard switching applications; Improved ease-of-use; Reduces possible ringing due to pcb layout and package parasitic effects | Target Applications: Consumer; Adapter; eMobility; PFC stages for server & telecom; SMPS; PC power; Solar; Lighting

Market price

Part #	Mfg.	Description	Stock	Price
IPL65R190E6AUMA1 DISTI # IPL65R190E6AUMA1-ND	Infineon Technologies AG	MOSFET N-CH 4VSON RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	Limited Supply - Call
IPL65R190E6AUMA1 DISTI # 726-IPL65R190E6AUMA1	Infineon Technologies AG	MOSFET N-Ch 650V 20.2A VSON-4 RoHS: Compliant	0
IPL65R190E6AUMA1 DISTI # 8977551P	Infineon Technologies AG	MOSFET N-CH 650V 12.8A COOLMOSE6 VSON4, RL	2995	25:£1.6400 100:£1.4340 250:£1.3420 500:£1.2800

Image	Part #	Description
	Mfr.#: IPL65R195C7AUMA1 OMO.#: OMO-IPL65R195C7AUMA1	MOSFET HIGH POWER BEST IN CLASS
	Mfr.#: IPL65R190E6AUMA1 OMO.#: OMO-IPL65R190E6AUMA1	MOSFET N-Ch 650V 20.2A VSON-4
	Mfr.#: IPL65R190E6 OMO.#: OMO-IPL65R190E6-1190	Infineon HIGH POWER_LEGACY
	Mfr.#: IPL65R195C7 OMO.#: OMO-IPL65R195C7-1190	MOSFET HIGH POWER BEST IN CLASS
	Mfr.#: IPL65R195C7AUMA1 OMO.#: OMO-IPL65R195C7AUMA1-INFINEON-TECHNOLOGIES	MOSFET HIGH POWER BEST IN CLASS
	Mfr.#: IPL65R190E6AUMA1 OMO.#: OMO-IPL65R190E6AUMA1-INFINEON-TECHNOLOGIES	RF Bipolar Transistors MOSFET N-Ch 650V 20.2A VSON-4

IPL65R190E6AUMA1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes