IPL65R195C7AUMA1

IPL65R195C7AUMA1
Mfr. #:
IPL65R195C7AUMA1
Manufacturer:
Infineon Technologies
Description:
MOSFET HIGH POWER BEST IN CLASS
Lifecycle:
New from this manufacturer.
Datasheet:
IPL65R195C7AUMA1 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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ECAD Model:
More Information:
IPL65R195C7AUMA1 more Information
Product Attribute
Attribute Value
Manufacturer
Infineon Technologies
Product Category
Transistors - FETs, MOSFETs - Single
Packaging
Reel
Part-Aliases
IPL65R195C7 SP001032726
Package-Case
VSON-4
Technology
Si
Tags
IPL65R19, IPL65R1, IPL65R, IPL65, IPL6, IPL
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 650V 12A 4-Pin VSON EP T/R
***ark
Mosfet, N-Ch, 650V, 12A, 75W, Vson; Transistor Polarity:n Channel; Continuous Drain Current Id:12A; Drain Source Voltage Vds:650V; On Resistance Rds(On):0.173Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.5V; Power Rohs Compliant: Yes
***ineon SCT
Infineon’s CoolMOS™ C7 superjunction MOSFET series is a revolutionary step forward in technology, providing the worlds’s lowest RDS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range, PG-VSON-4, RoHS
***ineon
Infineons new CoolMOS C7 superjunction MOSFET series is a revolutionary step forward in technology, providing the worldss lowest RDS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range. | Summary of Features: 650V voltage; Revolutionary best-in-class R DS(on)/package; Reduced energy stored in output capacitance (Eoss); Lower gate charge Qg; Space saving through use of smaller packages or reduction of parts; 12 years manufacturing experience in superjunction technology | Benefits: Improved safety margin and suitable for both SMPS and solar inverter applications; Lowest conduction losses/package; Low switching losses; Better light load efficiency; Increasing power density; Outstanding CoolMOS quality | Target Applications: Telecom; Server; Solar; PC power
CoolMOS™ 7 Superjunction MOSFETs
Infineon Technologies CoolMOS™ 7 Superjunction MOSFETs set new standards for energy efficiency, power density and ease of use. CoolMOS 7 technology is optimized for specific applications with innovative package concepts and various technologies. CoolMOS 7 MOSFETS are ideal for applications like making electric vehicle charging stations smaller with higher outputs resulting in faster car charging. Thanks to CoolMOS 7, new generations of adapters and chargers are smaller, lighter and more efficient. With CoolMOS 7, engineers can make renewable energy systems cheaper and more efficient.
CoolMOS™ Power Transistors
Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.
CoolMOS™ C7 Power MOSFETs
Infineon's CoolMOS™ C7 Power MOSFETs are a revolutionary step forward in technology, providing low RDS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range. The C7 is optimized for hard switching topologies such as Power Factor Correction (CCM PFC), Two Transistor Forward (TTF) and Solar Boost in applications such as Solar, Server, Telecom and UPS. The 650V breakdown voltage makes it suitable for Solar and Switched Mode Power Supplies (SMPS) PFC stages where extra safety margin are required. They offer the world's lowest RDS(on) of 19mΩ in a TO-247 and 45mΩ in TO-220 and D2PAK packages. The fast switching performance of C7 now enables customers to operate at switching frequencies greater than 100kHz while achieving titanium levels of efficiency in Server PFC stages.
Part # Mfg. Description Stock Price
IPL65R195C7AUMA1
DISTI # 32925559
Infineon Technologies AGTrans MOSFET N-CH 650V 12A 4-Pin VSON EP T/R3000
  • 3000:$1.2559
IPL65R195C7AUMA1
DISTI # IPL65R195C7AUMA1-ND
Infineon Technologies AGMOSFET N-CH 4VSON
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)
Temporarily Out of Stock
  • 3000:$1.5560
IPL65R195C7AUMA1
DISTI # IPL65R195C7AUMA1
Infineon Technologies AGMOS Power Transistors HV (>= 200V) - Tape and Reel (Alt: IPL65R195C7AUMA1)
RoHS: Compliant
Min Qty: 3000
Container: Reel
Americas - 0
  • 18000:$1.2900
  • 30000:$1.2900
  • 6000:$1.3900
  • 12000:$1.3900
  • 3000:$1.4900
IPL65R195C7AUMA1
DISTI # SP001032726
Infineon Technologies AGMOS Power Transistors HV (>= 200V) (Alt: SP001032726)
RoHS: Compliant
Min Qty: 3000
Europe - 0
  • 30000:€1.0900
  • 18000:€1.1900
  • 12000:€1.2900
  • 6000:€1.3900
  • 3000:€1.6900
IPL65R195C7AUMA1
DISTI # 84AC6839
Infineon Technologies AGMOSFET, N-CH, 650V, 12A, 75W, VSON,Transistor Polarity:N Channel,Continuous Drain Current Id:12A,Drain Source Voltage Vds:650V,On Resistance Rds(on):0.173ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3.5V,Power RoHS Compliant: Yes919
  • 1000:$1.5000
  • 500:$1.7800
  • 250:$1.9800
  • 100:$2.0900
  • 50:$2.2000
  • 25:$2.3100
  • 10:$2.4100
  • 1:$2.8400
IPL65R195C7
DISTI # 726-IPL65R195C7
Infineon Technologies AGMOSFET HIGH POWER BEST IN CLASS
RoHS: Compliant
0
  • 1:$2.8100
  • 10:$2.3900
  • 100:$2.0700
  • 250:$1.9600
  • 500:$1.7600
  • 1000:$1.4900
  • 3000:$1.4100
IPL65R195C7AUMA1
DISTI # 726-IPL65R195C7AUMA1
Infineon Technologies AGMOSFET HIGH POWER BEST IN CLASS0
  • 1:$2.8100
  • 10:$2.3900
  • 100:$2.0700
  • 250:$1.9600
  • 500:$1.7600
  • 1000:$1.4900
  • 3000:$1.4100
IPL65R195C7AUMA1
DISTI # 2983369
Infineon Technologies AGMOSFET, N-CH, 650V, 12A, 75W, VSON
RoHS: Compliant
919
  • 1000:$2.0800
  • 500:$2.3000
  • 250:$2.5700
  • 100:$2.7200
  • 10:$3.1400
  • 1:$4.1500
IPL65R195C7AUMA1
DISTI # 2983369
Infineon Technologies AGMOSFET, N-CH, 650V, 12A, 75W, VSON919
  • 500:£1.4100
  • 250:£1.5500
  • 100:£1.6400
  • 10:£1.9100
  • 1:£2.5200
Image Part # Description
IPL65R195C7AUMA1

Mfr.#: IPL65R195C7AUMA1

OMO.#: OMO-IPL65R195C7AUMA1

MOSFET HIGH POWER BEST IN CLASS
IPL65R190E6AUMA1

Mfr.#: IPL65R190E6AUMA1

OMO.#: OMO-IPL65R190E6AUMA1

MOSFET N-Ch 650V 20.2A VSON-4
IPL65R190E6

Mfr.#: IPL65R190E6

OMO.#: OMO-IPL65R190E6-1190

Infineon HIGH POWER_LEGACY
IPL65R195C7

Mfr.#: IPL65R195C7

OMO.#: OMO-IPL65R195C7-1190

MOSFET HIGH POWER BEST IN CLASS
IPL65R195C7AUMA1

Mfr.#: IPL65R195C7AUMA1

OMO.#: OMO-IPL65R195C7AUMA1-INFINEON-TECHNOLOGIES

MOSFET HIGH POWER BEST IN CLASS
IPL65R190E6AUMA1

Mfr.#: IPL65R190E6AUMA1

OMO.#: OMO-IPL65R190E6AUMA1-INFINEON-TECHNOLOGIES

RF Bipolar Transistors MOSFET N-Ch 650V 20.2A VSON-4
Availability
Stock:
Available
On Order:
1500
Enter Quantity:
Current price of IPL65R195C7AUMA1 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Reference price (USD)
Quantity
Unit Price
Ext. Price
1
$1.86
$1.86
10
$1.77
$17.65
100
$1.67
$167.22
500
$1.58
$789.65
1000
$1.49
$1 486.40
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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