IPL65R195C7AUMA1

Mfr. #:: IPL65R195C7AUMA1
Manufacturer:: Infineon Technologies
Description:: MOSFET HIGH POWER BEST IN CLASS
Lifecycle:: New from this manufacturer.
Datasheet:: IPL65R195C7AUMA1 Datasheet
Delivery:: DHL FedEx Ups TNT EMS
Payment:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:: IPL65R195C7AUMA1 more Information

Product Attribute
Attribute Value

Manufacturer:: Infineon

Product Category:: MOSFET

Technology:: Si

Mounting Style:: SMD/SMT

Package / Case:: VSON-4

Number of Channels:: 1 Channel

Transistor Polarity:: N-Channel

Vds - Drain-Source Breakdown Voltage:: 650 V

Id - Continuous Drain Current:: 12 A

Rds On - Drain-Source Resistance:: 173 mOhms

Vgs th - Gate-Source Threshold Voltage:: 3 V

Vgs - Gate-Source Voltage:: 20 V

Qg - Gate Charge:: 23 nC

Minimum Operating Temperature:: - 40 C

Maximum Operating Temperature:: + 150 C

Pd - Power Dissipation:: 75 W

Configuration:: Single

Channel Mode:: Enhancement

Tradename:: CoolMOS

Packaging:: Reel

Height:: 1.1 mm

Length:: 8 mm

Series:: CoolMOS C7

Transistor Type:: 1 N-Channel

Width:: 8 mm

Brand:: Infineon Technologies

Fall Time:: 16 ns

Product Type:: MOSFET

Rise Time:: 5 ns

Factory Pack Quantity:: 3000

Subcategory:: MOSFETs

Typical Turn-Off Delay Time:: 75 ns

Typical Turn-On Delay Time:: 9 ns

Part # Aliases:: IPL65R195C7 SP001032726

Tags: IPL65R19, IPL65R1, IPL65R, IPL65, IPL6, IPL

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IPL65R195C7AUMA1 Description

***ical: Trans MOSFET N-CH 650V 12A 4-Pin VSON EP T/R

***ark: 2ASFET, N-CH, 650V, 12A, 75W, VSON; Transistor Polarity:N Channel; Continuous Drain Current Id:12A; Drain Source Voltage Vds:650V; On Resistance Rds(on):0.173ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.5V; Power RoHS Compliant: Yes

***ineon SCT: Infineon’s CoolMOS™ C7 superjunction MOSFET series is a revolutionary step forward in technology, providing the worlds’s lowest RDS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range, PG-VSON-4, RoHS

***ineon: Infineons new CoolMOS C7 superjunction MOSFET series is a revolutionary step forward in technology, providing the worldss lowest RDS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range. | Summary of Features: 650V voltage; Revolutionary best-in-class R DS(on)/package; Reduced energy stored in output capacitance (Eoss); Lower gate charge Qg; Space saving through use of smaller packages or reduction of parts; 12 years manufacturing experience in superjunction technology | Benefits: Improved safety margin and suitable for both SMPS and solar inverter applications; Lowest conduction losses/package; Low switching losses; Better light load efficiency; Increasing power density; Outstanding CoolMOS quality | Target Applications: Telecom; Server; Solar; PC power

***p One Stop: Trans MOSFET N-CH 650V 13A 3-Pin(2+Tab) D2PAK T/R

***nell: MOSFET, N-CH, 650V, 13A, TO-263-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 13A; Drain Source Voltage Vds: 650V; On Resistance Rds(on): 0.168ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.5V;

***ineon SCT: Infineon’s CoolMOS™ C7 superjunction MOSFET series is a revolutionary step forward in technology, providing the worlds’s lowest RDS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range, PG-TO263-3, RoHS

***ineon: Infineons new CoolMOS C7 series is a revolutionary step forward in technology, providing the worldss lowest RDS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range. | Summary of Features: 650V voltage; Revolutionary best-in-class R DS(on)/package; Reduced energy stored in output capacitance (Eoss); Lower gate charge Qg; Space saving through use of smaller packages or reduction of parts; 12 years manufacturing experience in superjunction technology | Benefits: Improved safety margin and suitable for both SMPS and solar inverter applications; Lowest conduction losses/package; Low switching losses; Better light load efficiency; Increasing power density; Outstanding CoolMOS quality | Target Applications: Telecom; Server; Solar; PC power

***icroelectronics: N-channel 650 V, 0.198 Ohm typ., 15 A MDmesh(TM) V Power MOSFET in PowerFLAT 8x8 HV package

***ical: Trans MOSFET N-CH Si 650V 15A 5-Pin Power Flat T/R

***(Formerly Allied Electronics): MOSFET N-Channel 650V 15A PowerFLAT HV

***r Electronics: Power Field-Effect Transistor, 15A I(D), 650V, 0.21ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

*** Electronic Components: MOSFET N-Ch 650V .198Ohm 15A MDmesh M5

***icroelectronics SCT: Power MOSFETs, 650V, 15A, PowerFLAT 8x8 HV, Tape and Reel

***ronik: N-CH 650V 15A 210mOhm PwFLAT8x8

*** International: MOSFET N CH 650V 15A PWRFLT8X8HV

***el Electronic: Telecom Transformer 1:1 40Term. Gull Wing SMD

***i-Key: MOSFET N-CH 650V 15A PWRFLAT HV

***et: STMICROELECTRONICS STL22N65M5 MOSFETS

***ical: Trans MOSFET N-CH 600V 13A 3-Pin(2+Tab) DPAK T/R

***nell: MOSFET, N-CH, 600V, 13A, 150DEG C, 68W; Transistor Polarity: N Channel; Continuous Drain Current Id: 13A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.155ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.5V; Power Dissipation Pd: 68W; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: CoolMOS C7 Series; Automotive Qualification Standard: -; SVHC: No SVHC (15-Jan-2019)

***ineon: The new 600V CoolMOS C7 series from Infineon offers a ~50% reduction in turn-off losses (E oss ) compared to the CoolMOS CP, offering an outstanding level of performance in PFC, TTF and other hard-switching topologies. | Summary of Features: Reduced switching loss parameters such as Q G, C oss, E oss; Best-in-class figure of merit Q G*R DS(on); Increased switching frequency; Best R (on)*A in the world; Rugged body diode | Benefits: Enables increasing switching frequency without loss in efficiency; Measure showing key parameter for light load and full load efficiency; Doubling the switching frequency will half the size of magnetic components; Smaller packages for same R DS(on); Can be used in many more positions for both hard and soft switching topologies | Target Applications: Server; Telecom; PC power; Solar; Industrial

***icroelectronics: N-channel 650 V, 0.198 Ohm typ., 15 A MDmesh M5 Power MOSFET in DPAK package

***ure Electronics: N-channel 650 V 0.22 Ohm 110 W Surface Mount MDmesh V Power Mosfet - TO-252-3

***nell: MOSFET, N-CH, 650V, 15A, 110W, TO-252; Transistor Polarity: N Channel; Continuous Drain Current Id: 15A; Drain Source Voltage Vds: 650V; On Resistance Rds(on): 0.198ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 110W; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: MDmesh M5 Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)

***r Electronics: Power Field-Effect Transistor, 15A I(D), 650V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

***va Crawler: N-channel 650 V, 0.215 Ohm typ., 12.5 A MDmesh M5 power MOSFET in a PowerFLAT 8x8 HV package

***ure Electronics: N-Channel 710 V 0.240 Ohm Power Mosfet - PowerFlat 8x8 HV

***p One Stop: Trans MOSFET N-CH 650V 12.5A 5-Pin(4+Tab) Power Flat T/R

***et Europe: Trans MOSFET N-CH 700V 13.1A 5-Pin VSON T/R

***ineon SCT: CoolMOS™ E6 combines Infineon's experience as the leading superjunction MOSFET supplier with best-in-class innovation, PG-VSON-4, RoHS

***ineon: CoolMOS E6 combines Infineon's experience as the leading superjunction MOSFET supplier with best-in-class innovation. The offered devices provide all benefits of a fast switching SJ MOSFET while not sacrificing ease-of-use. Extremely low switching and conduction losses make switching applications even more efficient, compact, lighter and cooler. | Summary of Features: Easy control of switching behavior; Very high commutation ruggedness; Extremely low losses due to very low Figure of Merit (R DS(ON)*Q g) and E oss); Easy to use; Better light load efficiency compared to C3; Outstanding reliability with proven CoolMOS quality combined with high body diode ruggedness; Better price performance in comparison to previous CoolMOS generations; More efficient, more compact, lighter and cooler | Benefits: Improved power density; Improved reliability; General purpose part can be used in both soft and hard switching topologies; Better light load effciency; Improved effciency in hard switching applications; Improved ease-of-use; Reduces possible ringing due to pcb layout and package parasitic effects | Target Applications: Consumer; Adapter; eMobility; PFC stages for server & telecom; SMPS; PC power; Solar; Lighting

IPL65R195C7AUMA1 More Information

CoolMOS™ 7 Superjunction MOSFETs: Infineon Technologies CoolMOS™ 7 Superjunction MOSFETs set new standards for energy efficiency, power density and ease of use. CoolMOS 7 technology is optimized for specific applications with innovative package concepts and various technologies. CoolMOS 7 MOSFETS are ideal for applications like making electric vehicle charging stations smaller with higher outputs resulting in faster car charging. Thanks to CoolMOS 7, new generations of adapters and chargers are smaller, lighter and more efficient. With CoolMOS 7, engineers can make renewable energy systems cheaper and more efficient.

CoolMOS™ Power Transistors: Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.

CoolMOS™ C7 Power MOSFETs: Infineon's CoolMOS™ C7 Power MOSFETs are a revolutionary step forward in technology, providing low RDS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range. The C7 is optimized for hard switching topologies such as Power Factor Correction (CCM PFC), Two Transistor Forward (TTF) and Solar Boost in applications such as Solar, Server, Telecom and UPS. The 650V breakdown voltage makes it suitable for Solar and Switched Mode Power Supplies (SMPS) PFC stages where extra safety margin are required. They offer the world's lowest RDS(on) of 19mΩ in a TO-247 and 45mΩ in TO-220 and D2PAK packages. The fast switching performance of C7 now enables customers to operate at switching frequencies greater than 100kHz while achieving titanium levels of efficiency in Server PFC stages.

Market price

Part #	Mfg.	Description	Stock	Price
IPL65R195C7AUMA1 DISTI # 32925559	Infineon Technologies AG	Trans MOSFET N-CH 650V 12A 4-Pin VSON EP T/R	3000	3000:$1.2559
IPL65R195C7AUMA1 DISTI # IPL65R195C7AUMA1-ND	Infineon Technologies AG	MOSFET N-CH 4VSON RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	Temporarily Out of Stock	3000:$1.5560
IPL65R195C7AUMA1 DISTI # IPL65R195C7AUMA1	Infineon Technologies AG	MOS Power Transistors HV (>= 200V) - Tape and Reel (Alt: IPL65R195C7AUMA1) RoHS: Compliant Min Qty: 3000 Container: Reel	Americas - 0	18000:$1.2900 30000:$1.2900 6000:$1.3900 12000:$1.3900 3000:$1.4900
IPL65R195C7AUMA1 DISTI # SP001032726	Infineon Technologies AG	MOS Power Transistors HV (>= 200V) (Alt: SP001032726) RoHS: Compliant Min Qty: 3000	Europe - 0	30000:€1.0900 18000:€1.1900 12000:€1.2900 6000:€1.3900 3000:€1.6900
IPL65R195C7AUMA1 DISTI # 84AC6839	Infineon Technologies AG	MOSFET, N-CH, 650V, 12A, 75W, VSON,Transistor Polarity:N Channel,Continuous Drain Current Id:12A,Drain Source Voltage Vds:650V,On Resistance Rds(on):0.173ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3.5V,Power RoHS Compliant: Yes	919	1000:$1.5000 500:$1.7800 250:$1.9800 100:$2.0900 50:$2.2000 25:$2.3100 10:$2.4100 1:$2.8400
IPL65R195C7 DISTI # 726-IPL65R195C7	Infineon Technologies AG	MOSFET HIGH POWER BEST IN CLASS RoHS: Compliant	0	1:$2.8100 10:$2.3900 100:$2.0700 250:$1.9600 500:$1.7600 1000:$1.4900 3000:$1.4100
IPL65R195C7AUMA1 DISTI # 726-IPL65R195C7AUMA1	Infineon Technologies AG	MOSFET HIGH POWER BEST IN CLASS	0	1:$2.8100 10:$2.3900 100:$2.0700 250:$1.9600 500:$1.7600 1000:$1.4900 3000:$1.4100
IPL65R195C7AUMA1 DISTI # 2983369	Infineon Technologies AG	MOSFET, N-CH, 650V, 12A, 75W, VSON RoHS: Compliant	919	1000:$2.0800 500:$2.3000 250:$2.5700 100:$2.7200 10:$3.1400 1:$4.1500
IPL65R195C7AUMA1 DISTI # 2983369	Infineon Technologies AG	MOSFET, N-CH, 650V, 12A, 75W, VSON	919	500:£1.4100 250:£1.5500 100:£1.6400 10:£1.9100 1:£2.5200

Image	Part #	Description
	Mfr.#: IPL65R195C7AUMA1 OMO.#: OMO-IPL65R195C7AUMA1	MOSFET HIGH POWER BEST IN CLASS
	Mfr.#: IPL65R190E6AUMA1 OMO.#: OMO-IPL65R190E6AUMA1	MOSFET N-Ch 650V 20.2A VSON-4
	Mfr.#: IPL65R190E6 OMO.#: OMO-IPL65R190E6-1190	Infineon HIGH POWER_LEGACY
	Mfr.#: IPL65R195C7 OMO.#: OMO-IPL65R195C7-1190	MOSFET HIGH POWER BEST IN CLASS
	Mfr.#: IPL65R195C7AUMA1 OMO.#: OMO-IPL65R195C7AUMA1-INFINEON-TECHNOLOGIES	MOSFET HIGH POWER BEST IN CLASS
	Mfr.#: IPL65R190E6AUMA1 OMO.#: OMO-IPL65R190E6AUMA1-INFINEON-TECHNOLOGIES	RF Bipolar Transistors MOSFET N-Ch 650V 20.2A VSON-4

IPL65R195C7AUMA1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes