PartNumber | IPL65R195C7AUMA1 | IPL65R190E6AUMA1 |
Description | MOSFET HIGH POWER BEST IN CLASS | MOSFET N-Ch 650V 20.2A VSON-4 |
Manufacturer | Infineon | Infineon |
Product Category | MOSFET | MOSFET |
Technology | Si | Si |
Mounting Style | SMD/SMT | SMD/SMT |
Package / Case | VSON-4 | VSON-4 |
Number of Channels | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 650 V | 650 V |
Id Continuous Drain Current | 12 A | 20.2 A |
Rds On Drain Source Resistance | 173 mOhms | 190 mOhms |
Vgs th Gate Source Threshold Voltage | 3 V | 3 V |
Vgs Gate Source Voltage | 20 V | 20 V |
Qg Gate Charge | 23 nC | 73 nC |
Minimum Operating Temperature | - 40 C | - 40 C |
Maximum Operating Temperature | + 150 C | + 150 C |
Pd Power Dissipation | 75 W | 151 W |
Configuration | Single | Single |
Channel Mode | Enhancement | Enhancement |
Tradename | CoolMOS | CoolMOS |
Packaging | Reel | Reel |
Height | 1.1 mm | 1.1 mm |
Length | 8 mm | 8 mm |
Series | CoolMOS C7 | CoolMOS E6 |
Transistor Type | 1 N-Channel | 1 N-Channel |
Width | 8 mm | 8 mm |
Brand | Infineon Technologies | Infineon Technologies |
Fall Time | 16 ns | 10 ns |
Product Type | MOSFET | MOSFET |
Rise Time | 5 ns | 11 ns |
Factory Pack Quantity | 3000 | 3000 |
Subcategory | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 75 ns | 112 ns |
Typical Turn On Delay Time | 9 ns | 12 ns |
Part # Aliases | IPL65R195C7 SP001032726 | IPL65R190E6AUMA1 SP001074938 |
RoHS | - | Y |