FS75R12W2T4BOMA1

Mfr. #:: FS75R12W2T4BOMA1
Manufacturer:: Infineon Technologies
Description:: Trans IGBT Module N-CH 1200V 107A 375000mW 35-Pin Tray
Lifecycle:: New from this manufacturer.
Datasheet:: FS75R12W2T4BOMA1 Datasheet
Delivery:: DHL FedEx Ups TNT EMS
Payment:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

Product Attribute
Attribute Value

Tags: FS75R12W, FS75R12, FS75R1, FS75R, FS75, FS7

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

FS75R12W2T4BOMA1 Description

***ical: Trans IGBT Module N-CH 1200V 107A 375000mW 35-Pin EASY2B-1 Tray

***ment14 APAC: IGBT, L POWER, 1200V, 75A, EASYPACK; Module Configuration:Six; Transistor Polarity:N Channel; DC Collector Current:75A; Collector Emitter Voltage Vces:1.85V; Power Dissipation Pd:375W; Collector Emitter Voltage V(br)ceo:1.2kV; Operating Temperature Range:-40°C to +150°C; Transistor Case Style:Module; No. of Pins:18; SVHC:No SVHC (19-Dec-2011); Power Dissipation Max:375W

***ineon: EasyPACK 2B 1200V sixpack IGBT module with Trench/Fieldstop IGBT4, Emitter Controlled 4 diode and NTC. | Summary of Features: Low Switching Losses; Trench IGBT 4; V(CEsat) with positive Temperature Coefficient; Low V(CEsat); Al(2)O(3) Substrate with Low Thermal Restistance; Compact Design; Solder Contact Technology; Rugged mounting due to integrated mounting clamps | Benefits: Compact module concept; Optimized customers development cycle time and cost; Configuration flexibility | Target Applications: drives; aircon; ups

***et Europe: Trans IGBT Module N-CH 1.2kV 50A nom 460W 7-Pin 94x34mm

*** Stop Electro: Insulated Gate Bipolar Transistor, 625A I(C), 1200V V(BR)CES, N-Channel

***trelec: IGBT module [Infineon] BSM 50GB 120DLC IGBT module

***p One Stop Global: Trans IGBT Module N-CH 1200V 78A 400000mW 7-Pin 34MM-1

*** Electronic Components: IGBT Modules 1200V 50A DUAL

***ronik: IGBT-MOD 1200V 78A HB 34mm

***trelec: IGBT Module 34 mm 1.2 kV

***ment14 APAC: IGBT MODULE, DUAL, 1200V; Module Configuration:Dual; DC Collector Current:78A; Collector Emitter Voltage Vces:3V; Power Dissipation Pd:400W; Collector Emitter Voltage V(br)ceo:1.2kV; Operating Temperature Range:-40°C to +125°C; Transistor Case Style:Module; No. of Pins:7; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:M34a; Current Ic Continuous a Max:50A; Current Temperature:80°C; Fall Time tf:100ns; Package / Case:Half Bridge 1; Power Dissipation Max:400W; Power Dissipation Pd:400W; Power Dissipation Pd:400W; Pulsed Current Icm:100A; Rise Time:100ns; Termination Type:Screw; Voltage Vces:1.2kV

***ical: Trans IGBT Module N-CH 1200V 75A 270000mW 28-Pin ECONO2-6 Tray

***nell: IGBT MODULE, 6 N-CH, 1.2KV, 75A, 270W; Transistor Polarity: Six N Channel; DC Collector Current: 75A; Collector Emitter Saturation Voltage Vce(on): 1.7V; Power Dissipation Pd: 270W; Collector Emitter Voltage V(br)ceo: 1.2kV;

***trelec: IGBT module Connection: Soldering pins Fastening: 4 x M2 Configuration: 3-phasig Housing type: EconoPACK™2 Collector-emitter saturation voltage: 2.15 V Energy dissipation during make-time: 5 mJ Energy dissipation during turn-off time: 6.5 mJ

***ark: IGBT MOD, 1.2KV, 75A, 270W; Continuous Collector Current:75A; Collector Emitter Saturation Voltage:1.7V; Power Dissipation:270W; Operating Temperature Max:150°C; IGBT Termination:Press Fit; Collector Emitter Voltage Max:1.2kV RoHS Compliant: Yes

***ineon: EconoPACK 2 1200V sixpack IGBT module with IGBT3 and NTC | Summary of Features: High power density; Established Econo module concept; Integrated temperature sensor available; Low stray inductance module design; RoHS-compliant modules | Benefits: Compact module concept; Optimized customers development cycle time and cost; Configuration flexibility; Fast, reliable and low cost mounting concept | Target Applications: drives; induction; aircon

***ical: Trans IGBT Module N-CH 1200V 75A 270000mW 32-Pin Case SP-3 Tube

***ark: INSULATED GATE BIPOLAR TRANSISTOR, 75A I(C), 1200V V(BR)CES, N-CHANNEL ROHS COMPLIANT: YES

***rochip SCT: High Voltage Power Module, Dual boost chopper, 1200V, RoHS

***DA Technology Co., Ltd.: Product Description Demo for Development.

***i-Key: POWER MOD IGBT TRENCH BOOST SP3

*** Stop Electro: Insulated Gate Bipolar Transistor, 75A I(C), 1200V V(BR)CES, N-Channel

***el Electronic: Trans IGBT Module N-CH 1.2KV 75A 12-Pin Case SP-1

***rochip SCT: High Voltage Power Module, Phase leg, 1200V, RoHS

***ark: PM-IGBT-TFS-SP1 SP1 Tube RoHS Compliant: Yes

***ical: Trans IGBT Module N-CH 1200V 135A 568000mW 20-Pin Case SP-4

***i-Key: IGBT NPT BOOST CHOP 1200V SP4

***el Electronic: IGBT MODULE 1200V 135A 568W SP4

***hardson RFPD: POWER IGBT TRANSISTOR

Market price

Part #	Mfg.	Description	Stock	Price
FS75R12W2T4BOMA1 DISTI # V99:2348_18195639	Infineon Technologies AG	Trans IGBT Module N-CH 1200V 107A 375000mW 35-Pin Tray RoHS: Compliant	12	100:$67.5699 25:$70.3800 10:$73.6300 1:$76.0600
FS75R12W2T4BOMA1 DISTI # FS75R12W2T4BOMA1-ND	Infineon Technologies AG	MOD IGBT LOW PWR EASY2B-1 RoHS: Compliant Min Qty: 15 Container: Tray	Temporarily Out of Stock	15:$56.5627
FS75R12W2T4BOMA1 DISTI # 26763615	Infineon Technologies AG	Trans IGBT Module N-CH 1200V 107A 375000mW 35-Pin Tray RoHS: Compliant	12	100:$67.5699 25:$70.3800 10:$73.6300 1:$76.0600
FS75R12W2T4BOMA1 DISTI # FS75R12W2T4BOMA1	Infineon Technologies AG	LOW POWER EASY - Trays (Alt: FS75R12W2T4BOMA1) RoHS: Compliant Min Qty: 15 Container: Tray	Americas - 0	150:$43.8900 90:$44.9900 60:$46.0900 30:$47.2900 15:$47.9900
FS75R12W2T4 DISTI # 641-FS75R12W2T4	Infineon Technologies AG	IGBT Modules IGBT 1200V 75A RoHS: Compliant	0	1:$60.2000 5:$58.8500 10:$56.5600 25:$54.7400 50:$54.7300 100:$50.7200

Related products

Image	Part #	Description
	Mfr.#: FS75R12W2T4_B11 OMO.#: OMO-FS75R12W2T4-B11	IGBT Modules IGBT 1200V 75A
	Mfr.#: FS75R12W2T4 OMO.#: OMO-FS75R12W2T4	IGBT Modules IGBT 1200V 75A
	Mfr.#: FS75R12W2T4B11BOMA1 OMO.#: OMO-FS75R12W2T4B11BOMA1-INFINEON-TECHNOLOGIES	MOD IGBT LOW PWR EASY2B-2
	Mfr.#: FS75R12W2T4_B11 OMO.#: OMO-FS75R12W2T4-B11-125	IGBT Modules IGBT 1200V 75A
	Mfr.#: FS75R12W2T4 OMO.#: OMO-FS75R12W2T4-125	IGBT Modules IGBT 1200V 75A
	Mfr.#: FS75R12W2T4BOMA1 OMO.#: OMO-FS75R12W2T4BOMA1-INFINEON-TECHNOLOGIES	Trans IGBT Module N-CH 1200V 107A 375000mW 35-Pin Tray

Availability

Stock:: Available
On Order:: 5500
Enter Quantity:

Current price of FS75R12W2T4BOMA1 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com

Reference price (USD)

Quantity
Unit Price
Ext. Price

1: ~~$69.44~~; ~~$69.44~~

10: ~~$65.96~~; ~~$659.63~~

100: ~~$62.49~~; ~~$6 249.15~~

500: ~~$59.02~~; ~~$29 509.90~~

1000: ~~$55.55~~; ~~$55 548.00~~

Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.

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FS75R12W2T4BOMA1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes