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Part # | Mfg. | Description | Stock | Price |
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BSC016N04LSGATMA1 DISTI # V72:2272_06383356 | Infineon Technologies AG | Trans MOSFET N-CH 40V 31A 8-Pin TDSON EP T/R RoHS: Compliant | 2605 |
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BSC016N04LSGATMA1 DISTI # BSC016N04LSGATMA1TR-ND | Infineon Technologies AG | MOSFET N-CH 40V 100A TDSON-8 RoHS: Compliant Min Qty: 5000 Container: Tape & Reel (TR) | 5000In Stock |
|
BSC016N04LSGATMA1 DISTI # BSC016N04LSGATMA1CT-ND | Infineon Technologies AG | MOSFET N-CH 40V 100A TDSON-8 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT) | 5000In Stock |
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BSC016N04LSGATMA1 DISTI # BSC016N04LSGATMA1DKR-ND | Infineon Technologies AG | MOSFET N-CH 40V 100A TDSON-8 RoHS: Compliant Min Qty: 1 Container: Digi-Reel® | 5000In Stock |
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BSC016N04LSGATMA1 DISTI # 31003394 | Infineon Technologies AG | Trans MOSFET N-CH 40V 31A 8-Pin TDSON EP T/R RoHS: Compliant | 2605 |
|
BSC016N04LSGXT DISTI # BSC016N04LSGATMA1 | Infineon Technologies AG | Trans MOSFET N-CH 40V 31A 8-Pin TDSON EP T/R - Tape and Reel (Alt: BSC016N04LSGATMA1) RoHS: Compliant Min Qty: 5000 Container: Reel | Americas - 0 |
|
BSC016N04LSGATMA1 DISTI # 79X1326 | Infineon Technologies AG | MOSFET, N-CH, 40V, 100A, PG-TDSON- 8,Transistor Polarity:N Channel,Continuous Drain Current Id:100A,Drain Source Voltage Vds:40V,On Resistance Rds(on):0.0013ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2V RoHS Compliant: Yes | 2934 |
|
BSC016N04LS G DISTI # 726-BSC016N04LSG | Infineon Technologies AG | MOSFET N-Ch 40V 100A TDSON-8 OptiMOS 3 RoHS: Compliant | 0 |
|
BSC016N04LSGATMA1 DISTI # 726-BSC016N04LSGATMA | Infineon Technologies AG | MOSFET N-Ch 40V 100A TDSON-8 OptiMOS 3 RoHS: Compliant | 0 |
|
BSC016N04LSGATMA1 DISTI # 7545222P | Infineon Technologies AG | MOSFET N-CHANNEL 40V 31A OPTIMOS3 TDSON8, RL | 5600 |
|
BSC016N04LSGATMA1 DISTI # 7545222 | Infineon Technologies AG | MOSFET N-CHANNEL 40V 31A OPTIMOS3 TDSON8, PK | 186 |
|
BSC016N04LSGATMA1 DISTI # 2432701RL | Infineon Technologies AG | MOSFET, N CH, 40V, 100A, TDSON-8 RoHS: Compliant | 0 |
|
BSC016N04LSGATMA1 DISTI # 2432701 | Infineon Technologies AG | MOSFET, N CH, 40V, 100A, TDSON-8 RoHS: Compliant | 7061 |
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BSC016N04LSGATMA1 DISTI # 2432701 | Infineon Technologies AG | MOSFET, N CH, 40V, 100A, TDSON-8 RoHS: Compliant | 2934 |
|
BSC016N04LSGATMA1 DISTI # C1S322000460469 | Infineon Technologies AG | Trans MOSFET N-CH 40V 31A 8-Pin TDSON EP T/R RoHS: Compliant | 2605 |
|
Image | Part # | Description |
---|---|---|
Mfr.#: BSC016N03MS G OMO.#: OMO-BSC016N03MS-G |
MOSFET N-Ch 30V 100A TDSON-8 OptiMOS 3M | |
Mfr.#: BSC016N04LS G OMO.#: OMO-BSC016N04LS-G |
MOSFET N-Ch 40V 100A TDSON-8 OptiMOS 3 | |
Mfr.#: BSC016N03LS OMO.#: OMO-BSC016N03LS-1190 |
New and Original | |
Mfr.#: BSC016N03LSG OMO.#: OMO-BSC016N03LSG-1190 |
Power Field-Effect Transistor, 32A I(D), 30V, 0.0023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | |
Mfr.#: BSC016N03LSGXT OMO.#: OMO-BSC016N03LSGXT-1190 |
MOSFET N-Ch 30V 100A TDSON-8 OptiMOS 3 | |
Mfr.#: BSC016N03MSG OMO.#: OMO-BSC016N03MSG-1190 |
Power Field-Effect Transistor, 28A I(D), 30V, 0.002ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | |
Mfr.#: BSC016N04LS G OMO.#: OMO-BSC016N04LS-G-1190 |
Trans MOSFET N-CH 40V 31A 8-Pin TDSON EP | |
Mfr.#: BSC016N06NS OMO.#: OMO-BSC016N06NS-1190 |
MOSFET N-Ch 60V 100A DSON-8 OptiMOS | |
Mfr.#: BSC016N06NS , TDA3629T , |
New and Original | |
Mfr.#: BSC016N03LS G OMO.#: OMO-BSC016N03LS-G-128 |
MOSFET N-Ch 30V 100A TDSON-8 OptiMOS 3 |