BSC016

BSC016N03MS G vs BSC016N03LSGATMA1 vs BSC016N03LS G

 
PartNumberBSC016N03MS GBSC016N03LSGATMA1BSC016N03LS G
DescriptionMOSFET N-Ch 30V 100A TDSON-8 OptiMOS 3MMOSFET N-Ch 30V 100A TDSON-8 OptiMOS 3MOSFET N-Ch 30V 100A TDSON-8 OptiMOS 3
ManufacturerInfineonInfineonInfineon
Product CategoryMOSFETMOSFETMOSFET
RoHSYYY
TechnologySiSiSi
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CaseTDSON-8TDSON-8TDSON-8
Number of Channels1 Channel1 Channel1 Channel
Transistor PolarityN-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage30 V30 V30 V
Id Continuous Drain Current28 A100 A100 A
Rds On Drain Source Resistance1.6 mOhms1.3 mOhms1.3 mOhms
Vgs Gate Source Voltage16 V20 V20 V
Minimum Operating Temperature- 55 C- 55 C- 55 C
Maximum Operating Temperature+ 150 C+ 150 C+ 150 C
Pd Power Dissipation2.5 W125 W125 W
ConfigurationSingleSingleSingle
Channel ModeEnhancementEnhancementEnhancement
TradenameOptiMOSOptiMOSOptiMOS
PackagingReelReelReel
Height1.27 mm1.27 mm1.27 mm
Length5.9 mm5.9 mm5.9 mm
SeriesOptiMOS 3MOptiMOS 3OptiMOS 3
Transistor Type1 N-Channel1 N-Channel1 N-Channel
Width5.15 mm5.15 mm5.15 mm
BrandInfineon TechnologiesInfineon TechnologiesInfineon Technologies
Fall Time16 ns8.6 ns8.6 ns
Product TypeMOSFETMOSFETMOSFET
Rise Time16 ns8.6 ns8.6 ns
Factory Pack Quantity500050005000
SubcategoryMOSFETsMOSFETsMOSFETs
Typical Turn Off Delay Time42 ns51 ns51 ns
Typical Turn On Delay Time31 ns13 ns13 ns
Part # AliasesBSC016N03MSGATMA1 BSC16N3MSGXT SP000311502BSC016N03LS BSC16N3LSGXT G SP000237663BSC016N03LSGATMA1 BSC16N3LSGXT SP000237663
Vgs th Gate Source Threshold Voltage-1 V1 V
Qg Gate Charge-131 nC131 nC
Forward Transconductance Min-65 S65 S
Manufacturer Part # Description RFQ
Infineon Technologies
Infineon Technologies
BSC016N06NSTATMA1 MOSFET DIFFERENTIATED MOSFETS
BSC016N06NS MOSFET N-Ch 60V 100A DSON-8 OptiMOS
BSC016N06NSATMA1 MOSFET N-Ch 60V 100A DSON-8 OptiMOS
BSC016N03MS G MOSFET N-Ch 30V 100A TDSON-8 OptiMOS 3M
BSC016N04LS G MOSFET N-Ch 40V 100A TDSON-8 OptiMOS 3
BSC016N03LSGATMA1 MOSFET N-Ch 30V 100A TDSON-8 OptiMOS 3
BSC016N04LSGATMA1 MOSFET N-Ch 40V 100A TDSON-8 OptiMOS 3
BSC016N03LS G MOSFET N-Ch 30V 100A TDSON-8 OptiMOS 3
BSC016N03MSGATMA1 MOSFET N-CH 30V 100A TDSON-8
BSC016N04LSGATMA1 MOSFET N-CH 40V 100A TDSON-8
BSC016N06NSATMA1 MOSFET N-CH 60V 30A TDSON-8
BSC016N06NSTATMA1 DIFFERENTIATED MOSFETS
BSC016N03LSGATMA1 MOSFET N-CH 30V 100A TDSON8
Infineon Technologies
Infineon Technologies
BSC016N03MSGATMA1 MOSFET LV POWER MOS
BSC016N03LSGXT/BKN INSTOCK
BSC016N03KSG New and Original
BSC016N03LS New and Original
BSC016N03LSG Power Field-Effect Transistor, 32A I(D), 30V, 0.0023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
BSC016N03LSG , TDA18275A New and Original
BSC016N03LSGATMA1 , TDA1 New and Original
BSC016N03LSGXT MOSFET N-Ch 30V 100A TDSON-8 OptiMOS 3
BSC016N03MS Transistor: N-MOSFET, unipolar, 30V, 100A, 125W, PG-TDSON-8
BSC016N03MS G Trans MOSFET N-CH 30V 28A 8-Pin TDSON T/R (Alt: BSC016N03MS G)
BSC016N03MSG Power Field-Effect Transistor, 28A I(D), 30V, 0.002ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
BSC016N03MSGXT New and Original
BSC016N04LS 100 A, 40 V, 0.0023 ohm, N-CHANNEL, Si, POWER, MOSFET
BSC016N04LS G Trans MOSFET N-CH 40V 31A 8-Pin TDSON EP
BSC016N04LSG 100 A, 40 V, 0.0023 ohm, N-CHANNEL, Si, POWER, MOSFET
BSC016N04LSGS New and Original
BSC016N06NS MOSFET N-Ch 60V 100A DSON-8 OptiMOS
BSC016N06NS , TDA3629T , New and Original
BSC016N06NSXT New and Original
BSC016N03LS G MOSFET N-Ch 30V 100A TDSON-8 OptiMOS 3
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