BSC016N06NSATMA1

Mfr. #:: BSC016N06NSATMA1
Manufacturer:: Infineon Technologies
Description:: MOSFET N-Ch 60V 100A DSON-8 OptiMOS
Lifecycle:: New from this manufacturer.
Datasheet:: BSC016N06NSATMA1 Datasheet
Delivery:: DHL FedEx Ups TNT EMS
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More Information:: BSC016N06NSATMA1 more Information

Product Attribute
Attribute Value

Manufacturer:: Infineon

Product Category:: MOSFET

RoHS:: Y

Technology:: Si

Mounting Style:: SMD/SMT

Package / Case:: TDSON-8

Number of Channels:: 1 Channel

Transistor Polarity:: N-Channel

Vds - Drain-Source Breakdown Voltage:: 60 V

Id - Continuous Drain Current:: 100 A

Rds On - Drain-Source Resistance:: 1.4 mOhms

Vgs th - Gate-Source Threshold Voltage:: 1.2 V

Vgs - Gate-Source Voltage:: 20 V

Qg - Gate Charge:: 95 nC

Minimum Operating Temperature:: - 55 C

Maximum Operating Temperature:: + 150 C

Pd - Power Dissipation:: 139 W

Configuration:: Single

Channel Mode:: Enhancement

Tradename:: OptiMOS

Packaging:: Reel

Height:: 1.27 mm

Length:: 5.9 mm

Series:: OptiMOS 5

Transistor Type:: 1 N-Channel

Width:: 5.15 mm

Brand:: Infineon Technologies

Forward Transconductance - Min:: 70 S

Fall Time:: 9 ns

Product Type:: MOSFET

Rise Time:: 9 ns

Factory Pack Quantity:: 5000

Subcategory:: MOSFETs

Typical Turn-Off Delay Time:: 35 ns

Typical Turn-On Delay Time:: 19 ns

Part # Aliases:: BSC016N06NS BSC16N6NSXT SP000924882

Unit Weight:: 0.007055 oz

Tags: BSC016N06, BSC016, BSC01, BSC0, BSC

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

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BSC016N06NSATMA1 Description

***ure Electronics: Single N-Channel 60 V 1.6 mOhm 71 nC OptiMOS Power Mosfet - TDSON-8 FL

***ark: Transistor Polarity:n Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:100A; On Resistance Rds(On):0.0014Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.8V Rohs Compliant: Yes

***ineon SCT: OptiMOS™ 5 60V is optimized for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops and tablet charger, PG-TDSON-8, RoHS

***nell: MOSFET, N CH, 60V, 100A, TDSON-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 100A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.0014ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2.8V; Power Dissipation Pd: 139W; Transistor Case Style: TDSON; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

***ineon: OptiMOS 5 60V is optimized for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops and tablet charger. In addition these devices are a perfect choice for a broad range of industrial applications including motor control, solar micro inverter and fast switching DC-DC converter. | Summary of Features: Optimized for synchronous rectification; 40% lower R DS(on) than alternative devices; 40% improvement of FOM over similar devices; RoHS compliant - halogen free; MSL1 rated | Benefits: Highest system efficiency; Less paralleling required; Increased power density; System cost reduction; Very low voltage overshoot | Target Applications: Synchronous rectification; Solar micro inverter; Isolated DC-DC converters; Motor control for 12-48V systems; Or-ing switches

***ineon SCT: 60V Single N-Channel HEXFET Power MOSFET in a Lead Free D2-Pak package, D2PAK-3, RoHS

***ure Electronics: Single N-Channel 60 V 5.1 mOhm 88 nC HEXFET® Power Mosfet - D2PAK

***Yang: Trans MOSFET N-CH 60V 110A 3-Pin D2PAK T/R - Tape and Reel

***S.I.T. Europe - USA - Asia: Power Field-Effect Transistor, 110A I(D), 60V, 0.0051ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

***ineon: Benefits: RoHS Compliant; Improved Gate, Avalanche and Dynamic dV/dt Ruggedness; Fully Characterized Capacitance and Avalanche SOA; Enhanced body diode dV/dt and dI/dt Capability

***ark: Transistor Polarity:n Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:110A; On Resistance Rds(On):0.0042Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.7V Rohs Compliant: Yes

***ark: Mosfet Transistor, N Channel, 160 A, 60 V, 3.3 Mohm, 10 V, 4 V

***ure Electronics: Single N-Channel 60 V 4.2 mOhm 85 nC HEXFET® Power Mosfet - D2PAK

***ineon SCT: 60V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS

***(Formerly Allied Electronics): MOSFET; N Ch.; 60V; 160A; 4.2 MOHM; 85 NC QG; D2-PAK; Pb-Free

***C: Trans MOSFET N-CH 60V 160A 3-Pin(2+Tab) D2PAK T/R Trans MOSFET N-CH 60V 160A 3-Pin(2+Tab) D2PAK T/R Trans MOSFET N-CH 60V 160A 3-Pin(2+Tab) D2PAK T/R

***nell: MOSFET, N, 60V, D2-PAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 160A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.0033ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissip

***icontronic: Power Field-Effect Transistor, 120A I(D), 60V, 0.0042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

***ure Electronics: N-Channel 60 V 7 mOhm Surface Mount PowerTrench Mosfet D2PAK-3

***emi: N-Channel PowerTrench® MOSFET 60V, 80A, 7mΩ

***Yang: Trans MOSFET N-CH 60V 80A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel

***r Electronics: Power Field-Effect Transistor, 15A I(D), 60V, 0.007ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

***ment14 APAC: MOSFET, N; Transistor Polarity:N Channel; Continuous Drain Current Id:80A; Drain Source Voltage Vds:60V; On Resistance Rds(on):6.1mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:175W; Transistor Case Style:TO-263; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:80A; Package / Case:TO-263; Power Dissipation Pd:175W; Termination Type:SMD; Voltage Vds Typ:60V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V

*** Electronics: In a Pack of 5, N-Channel MOSFET, 100 A, 60 V, 8-Pin Power 56 ON Semiconductor FDMS030N06B

***ure Electronics: Single N-Channel 60 V 3 mOhm 75 nC 2.5 W PowerTrench SMT Mosfet - POWER 56-8

***emi: N-Channel PowerTrench® MOSFET 60V, 100A, 3mΩ

***ment14 APAC: MOSFET, N-CH, 60V, 100A, PQFN; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Source Voltage Vds:60V; On Resistance

***r Electronics: Power Field-Effect Transistor, 22.1A I(D), 60V, 0.003ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA

***rchild Semiconductor: This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.

***nell: MOSFET, N-CH, 60V, 100A, PQFN; Transistor Polarity: N Channel; Continuous Drain Current Id: 100A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.0024ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.3V; Power Dissipation Pd: 104W; Transistor Case Style: PQFN; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: PowerTrench Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)

***r Electronics: Power Field-Effect Transistor, 80A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET

***ical: Trans MOSFET N-CH 60V 80A Automotive 3-Pin(2+Tab) DPAK T/R

***ure Electronics: N-Channel 60 V 6.5 mO Surface Mount STripFET F6 Power Mosfet - TO-252

***icroelectronics: Automotive-grade N-channel 60 V, 4.4 mOhm typ., 80 A STripFET(TM) VI DeepGATE(TM) Power MOSFET in a DPAK package

***el Electronic: NXP MCIMX535DVV1C MPU, CORTEX-A8, I.MX53, R2.1, 529BGA

***icroelectronics SCT: Automotive Power Discrete, 60V, 80A, DPAK, Tape and Reel

BSC016N06NSATMA1 More Information

OptiMOS™ 5 Power MOSFETs: Infineon OptiMOS™ 5 Power MOSFETs are designed to meet requirements for improved system efficiency while reducing system costs. These devices feature lower RDS(on) and Figure of Merit (RDS(on) x Qg) compared to alternative devices. They are designed using a new silicon technology, optimized to meet and exceed the energy efficiency and power density requirements. Typical applications for these MOSFETs include server, datacom and client applications in the computing industry. They can also be used in synchronous rectification in switched mode power supplies (SMPS) and motor control, solar micro inverters and fast switching DC/DC converter applications.

20-60V OptiMOS Power MOSFETs: Infineon's 20-60V OptiMOS Power MOSFETs are innovative products that serve the market needs throughout the whole energy supply chain. OptiMOS™ is the market leader in highly efficient solutions for power generation (e.g. solar micro inverter), power supply (e.g. server and telecom) and power consumption (e.g. electric vehicle). These devices consistently set the benchmark in key specifications for power system design, including leading on-state resistance and Figure of Merit characteristics which lead to reduced power losses and improved overall efficiency. These help customers that face the challenge of growing power demand, higher efficiency and lower cost.Learn More

Market price

Part #	Mfg.	Description	Stock	Price
BSC016N06NSATMA1 DISTI # BSC016N06NSATMA1CT-ND	Infineon Technologies AG	MOSFET N-CH 60V 30A TDSON-8 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	19997In Stock	1000:$1.1500 500:$1.3879 100:$1.7845 10:$2.2210 1:$2.4600
BSC016N06NSATMA1 DISTI # BSC016N06NSATMA1DKR-ND	Infineon Technologies AG	MOSFET N-CH 60V 30A TDSON-8 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	19997In Stock	1000:$1.1500 500:$1.3879 100:$1.7845 10:$2.2210 1:$2.4600
BSC016N06NSATMA1 DISTI # BSC016N06NSATMA1TR-ND	Infineon Technologies AG	MOSFET N-CH 60V 30A TDSON-8 RoHS: Compliant Min Qty: 5000 Container: Tape & Reel (TR)	10000In Stock	5000:$1.0010
BSC016N06NSATMA1 DISTI # BSC016N06NSATMA1	Infineon Technologies AG	Trans MOSFET N-CH 60V 30A 8-Pin TDSON EP T/R - Tape and Reel (Alt: BSC016N06NSATMA1) RoHS: Compliant Min Qty: 5000 Container: Reel	Americas - 0	5000:$0.8059 10000:$0.7769 20000:$0.7489 30000:$0.7239 50000:$0.7109
BSC016N06NSATMA1 DISTI # BSC016N06NS	Infineon Technologies AG	Trans MOSFET N-CH 60V 30A 8-Pin TDSON EP T/R (Alt: BSC016N06NS) RoHS: Compliant Min Qty: 5000 Container: Tape and Reel	Asia - 0
BSC016N06NSATMA1 DISTI # 79X1327	Infineon Technologies AG	MOSFET, N-CH, 60V, 100A, PG-TDSON- 8,Transistor Polarity:N Channel,Continuous Drain Current Id:100A,Drain Source Voltage Vds:60V,On Resistance Rds(on):0.0014ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.8V RoHS Compliant: Yes	0	1:$2.0600 10:$1.7700 25:$1.6700 50:$1.5600 100:$1.4600 250:$1.3500 500:$1.3000 1000:$1.2600
BSC016N06NSATMA1. DISTI # 27AC1071	Infineon Technologies AG	Transistor Polarity:N Channel,Continuous Drain Current Id:100A,Drain Source Voltage Vds:60V,On Resistance Rds(on):0.0014ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.8V,Power Dissipation Pd:139W,No. of Pins:8Pins RoHS Compliant: Yes	0	1:$0.8060 10000:$0.7770 20000:$0.7490 30000:$0.7240 50000:$0.7110
BSC016N06NS DISTI # 726-BSC016N06NS	Infineon Technologies AG	MOSFET N-Ch 60V 100A DSON-8 OptiMOS RoHS: Compliant	143	1:$2.0600 10:$1.7500 100:$1.4000 500:$1.2300 1000:$1.0200
BSC016N06NSATMA1 DISTI # 726-BSC016N06NSATMA1	Infineon Technologies AG	MOSFET N-Ch 60V 100A DSON-8 OptiMOS RoHS: Compliant	0	1:$2.0600 10:$1.7500 100:$1.4000 500:$1.2300 1000:$1.0200
BSC016N06NSATMA1 DISTI # 2432702	Infineon Technologies AG	MOSFET, N CH, 60V, 100A, TDSON-8 RoHS: Compliant	0	1:£1.8900 10:£1.4900 100:£1.2000 250:£1.1200 500:£1.1000
BSC016N06NSATMA1 DISTI # 2432702	Infineon Technologies AG	MOSFET, N CH, 60V, 100A, TDSON-8 RoHS: Compliant	0	1:$3.2600 10:$2.7800 100:$2.3300
BSC016N06NSATMA1 DISTI # 2432702RL	Infineon Technologies AG	MOSFET, N CH, 60V, 100A, TDSON-8 RoHS: Compliant	0	1:$3.2600 10:$2.7800 100:$2.3300

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BSC016N06NSATMA1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes