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BSZ096N10LS5ATMA1

BSZ096N10LS5ATMA1
Mfr. #:
BSZ096N10LS5ATMA1
Manufacturer:
Infineon Technologies
Description:
MV POWER MOS
Lifecycle:
New from this manufacturer.
Datasheet:
BSZ096N10LS5ATMA1 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Product Attribute
Attribute Value
Tags
BSZ09, BSZ0, BSZ
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Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 100V 11A 8-Pin TSDSON EP T/R
***ark
MOSFET, N-CH, 100V, 40A, 150DEG C, 69W; Transistor Polarity:N Channel; Continuous Drain Current Id:40A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.0082ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.7V; Power RoHS Compliant: Yes
***ineon
Infineon's new logic level OptiMOS 5 power MOSFETs are highly suitable for wireless charging, adapter and telecom applications. The new devices' low gate charge (Q g) reduces switching losses without compromising conduction losses. The improved figues of merit allow operations at high switching frequencies. Furthermore, the logic level drive provides a low gate threshold voltage (V GS(th)) allowing the MOSFETs to be driven at 5V and directly from microcontrollers. | Summary of Features: Low R DS(on) in small package; Low gate charge; Lower output charge; Logic level compatibility | Benefits: Higher power density designs; Higher switching frequency; Reduced parts count wherever 5V supplies are available; Driven directly from microcontrollers (slow switching); System cost reduction | Target Applications: Wireless charging; Adapter; Telecom
Part # Mfg. Description Stock Price
BSZ096N10LS5ATMA1
DISTI # V36:1790_16141101		Infineon Technologies AG100V N-Channel MOSFET0
  • 5000000:$0.6049
  • 2500000:$0.6052
  • 500000:$0.6346
  • 50000:$0.6880
  • 5000:$0.6970
BSZ096N10LS5ATMA1
DISTI # BSZ096N10LS5ATMA1-ND		Infineon Technologies AGMV POWER MOS
RoHS: Compliant
Min Qty: 5000
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 5000:$0.6970
BSZ096N10LS5ATMA1
DISTI # BSZ096N10LS5ATMA1		Infineon Technologies AGDIFFERENTIATED MOSFETS - Tape and Reel (Alt: BSZ096N10LS5ATMA1)
RoHS: Compliant
Min Qty: 5000
Container: Reel		Americas - 0
  • 50000:$0.6339
  • 30000:$0.6449
  • 20000:$0.6679
  • 10000:$0.6929
  • 5000:$0.7189
BSZ096N10LS5ATMA1
DISTI # SP001352994		Infineon Technologies AGDIFFERENTIATED MOSFETS (Alt: SP001352994)
RoHS: Compliant
Min Qty: 5000		Europe - 0
  • 50000:€0.5809
  • 30000:€0.6259
  • 20000:€0.6779
  • 10000:€0.7399
  • 5000:€0.9049
BSZ096N10LS5ATMA1
DISTI # 726-BSZ096N10LS5ATMA		Infineon Technologies AGMOSFET
RoHS: Compliant		12
  • 1:$1.6300
  • 10:$1.3900
  • 100:$1.0700
  • 500:$0.9490
  • 1000:$0.7490
  • 5000:$0.6640
  • 10000:$0.6390
Image Part # Description
BSZ096N10LS5ATMA1

Mfr.#: BSZ096N10LS5ATMA1

OMO.#: OMO-BSZ096N10LS5ATMA1

 MOSFET
BSZ096N10LS5

Mfr.#: BSZ096N10LS5

OMO.#: OMO-BSZ096N10LS5-1190

 New and Original
BSZ096N10LS5ATMA1

Mfr.#: BSZ096N10LS5ATMA1

OMO.#: OMO-BSZ096N10LS5ATMA1-INFINEON-TECHNOLOGIES

 MV POWER MOS
Availability
Stock:
Available
On Order:
2000
Enter Quantity:
Current price of BSZ096N10LS5ATMA1 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Reference price (USD)
Quantity
Unit Price
Ext. Price
1
$0.00
$0.00
10
$0.00
$0.00
100
$0.00
$0.00
500
$0.00
$0.00
1000
$0.00
$0.00
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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