BSO330N02KGFUMA1

Mfr. #:: BSO330N02KGFUMA1
Manufacturer:: Infineon Technologies
Description:: MOSFET 2N-CH 20V 5.4A 8DSO
Lifecycle:: New from this manufacturer.
Datasheet:: BSO330N02KGFUMA1 Datasheet
Delivery:: DHL FedEx Ups TNT EMS
Payment:: T/T Paypal Visa MoneyGram Western Union
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Tags: BSO330N02KG, BSO33, BSO3, BSO

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BSO330N02KGFUMA1 Description

***et: Transistor MOSFET Array Dual N-CH 20V 5.4A 8-Pin TDSON T/R

***i-Key: MOSFET 2N-CH 20V 5.4A 8DSO

***i-Key Marketplace: SMALL SIGNAL N-CHANNEL MOSFET

***ure Electronics: Dual N & P-Channel 20 V 30 mOhm PowerTrench® Mosfet - SOIC-8

***ical: Trans MOSFET N/P-CH 20V 6.5A/5A 8-Pin SOIC N T/R

***Yang: Trans MOSFET N/P-CH 20V 6.5A/5A 8-Pin SOIC N T/R - Product that comes on tape, but is not reeled (Al

***roFlash: Power Field-Effect Transistor, 6.5A I(D), 20V, 0.03ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET

***ment14 APAC: MOSFET, N & P CH 8SOIC; Transistor Polarity:N and P Channel; Continuous Drain Current Id:6.5A; Drain Source Voltage Vds:20V; On Resistance Rds(on):30mohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:1V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:6.5A; Package / Case:SOIC; Power Dissipation Pd:2W; Termination Type:SMD; Voltage Vds Typ:20V; Voltage Vgs Max:1V; Voltage Vgs Rds on Measurement:4.5V

***rchild Semiconductor: These dual N- and P-channel enhancement mode power field effect transistors are produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize on-state ressitance and yet maintain superior switching performance.These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.

***(Formerly Allied Electronics): IRF7317PBF Dual N/P-channel MOSFET Transistor; 5.3 A; 6.6 A; 20 V; 8-Pin SOIC

***ure Electronics: Dual N/P-Channel 20 V 0.029/0.058 Ohm 18/19 nC HEXFET® Power Mosfet - SOIC-8

***ineon SCT: 20V Dual N- and P- Channel HEXFET Power MOSFET in a SO-8 package, SO8, RoHS

***nell: MOSFET, DUAL, NP, LOGIC, SO-8; Transistor Polarity: N and P Channel; Continuous Drain Current Id: 6.6A; Drain Source Voltage Vds: 20V; On Resistance Rds(on): 0.023ohm; Rds(on) Test Voltage Vgs: 4.5V; Threshold Voltage Vgs: 700

***ark: Dual N/p Channel Mosfet, 20V, Soic; Channel Type:complementary N And P Channel; Drain Source Voltage Vds N Channel:20V; Drain Source Voltage Vds P Channel:20V; Continuous Drain Current Id N Channel:6.6A; No. Of Pins:8Pins Rohs Compliant: Yes

***emi: Dual N-Channel PowerTrench® MOSFET, 2.5V Specified, 20V, 6.5A, 30mΩ

***ure Electronics: Dual N-Channel 20 V 30 mOhm Surface Mount PowerTrench Mosfet - SOIC-8

***Yang: Transistor MOSFET Array Dual N-CH 20V 6.5A 8-Pin SOIC T/R - Product that comes on tape, but is not r

***el Electronic: ON SEMICONDUCTOR - FDS9926A - Dual MOSFET, Dual N Channel, 6.5 A, 20 V, 0.025 ohm, 4.5 V, 1 V

***ment14 APAC: MOSFET, DUAL, N, SMD, SO-8; Transistor Polarity:N Channel; Continuous Drain Current Id:6.5A; Drain Source Voltage Vds:20V; On Resistance Rds(on):30mohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:1V; Power Dissipation Pd:2W; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:6.5A; Package / Case:SOIC; Power Dissipation Pd:2W; Termination Type:SMD; Voltage Vds Typ:20V; Voltage Vgs Max:1V; Voltage Vgs Rds on Measurement:4.5V

***rchild Semiconductor: These N-Channel 2.5V specified MOSFETs use Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V – 10V).

***ure Electronics: Dual N-Channel 20 V 30 mOhm 13 nC HEXFET® Power Mosfet - SOIC-8

*** Source Electronics: MOSFET 2N-CH 20V 7A 8-SOIC / Trans MOSFET N-CH Si 20V 7A 8-Pin SOIC T/R

***ineon: Benefits: RoHS Compliant; Low RDS(on); Dual N-Channel MOSFET

***ark: Mosfet, Dual N-Ch, 20V, 7A, Soic; Transistor Polarity:dual N Channel; Continuous Drain Current Id:7A; Drain Source Voltage Vds:20V; On Resistance Rds(On):0.03Ohm; Rds(On) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:1.2V; Power Rohs Compliant: Yes

***ure Electronics: Single P-Channel 20 V 0.04 Ohm 50 nC HEXFET® Power Mosfet - SOIC-8

***(Formerly Allied Electronics): MOSFET, P-CHANNEL, -20V, -6.7A, 40 mOhm, 33.3 nC Qg, SO-8

***Yang: Trans MOSFET P-CH 20V 6.7A 8-Pin SOIC T/R - Tape and Reel

***ineon SCT: -20V Single P-Channel HEXFET Power MOSFET in a SO-8 package, SO8, RoHS

***roFlash: Power Field-Effect Transistor, 5.3A I(D), 20V, 0.04ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA

***ineon: Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature; P-Channel MOSFET

***nell: MOSFET, P, LOGIC, SO-8; Transistor Polarity: P Channel; Continuous Drain Current Id: -6.7A; Drain Source Voltage Vds: -20V; On Resistance Rds(on): 0.04ohm; Rds(on) Test Voltage Vgs: -4.5V; Threshold Voltage Vgs: -700mV; Power

***trelec: Transistor Polarity = P-Channel / Configuration = Single / Continuous Drain Current (Id) A = -7.7 / Drain-Source Voltage (Vds) V = -20 / ON Resistance (Rds(on)) mOhm = 40 / Gate-Source Voltage V = 12 / Fall Time ns = 65 / Rise Time ns = 32 / Turn-OFF Delay Time ns = 100 / Turn-ON Delay Time ns = 14 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SO-8 / Pins = 8 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Power Dissipation (Pd) W = 2.5

***Yang: Transistor MOSFET Array Dual P-Channel 20V 5A 8-Pin SOIC N T/R - Bulk

***inecomponents.com: Dual P-Channel 2.5V Specified PowerTrench® MOSFET

***DA Technology Co., Ltd.: Product Description Demo for Development.

***ser: MOSFETs Dl P-Ch 2.5V Spec PowerTrench

***rchild Semiconductor: This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V – 12V).

Market price

Part #	Mfg.	Description	Stock	Price
BSO330N02KGFUMA1 DISTI # BSO330N02KGFUMA1TR-ND	Infineon Technologies AG	MOSFET 2N-CH 20V 5.4A 8DSO RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR)	Limited Supply - Call
BSO330N02KGFUMA1 DISTI # BSO330N02KGFUMA1CT-ND	Infineon Technologies AG	MOSFET 2N-CH 20V 5.4A 8DSO RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	Limited Supply - Call
BSO330N02KGFUMA1 DISTI # BSO330N02KGFUMA1DKR-ND	Infineon Technologies AG	MOSFET 2N-CH 20V 5.4A 8DSO RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Limited Supply - Call
BSO330N02KGFUMA1 DISTI # BSO330N02KGFUMA1	Infineon Technologies AG	Trans MOSFET 2N-CH 20V 5.4A 8DSO - Bulk (Alt: BSO330N02KGFUMA1) Min Qty: 1389 Container: Bulk	Americas - 0	13890:$0.2279 6945:$0.2319 4167:$0.2399 2778:$0.2499 1389:$0.2589
BSO330N02K G DISTI # 726-BSO330N02KG	Infineon Technologies AG	MOSFET N-Ch 20V 5.4A DSO-8 OptiMOS 2 RoHS: Compliant	2299	1:$0.9300 10:$0.7200 100:$0.5510 500:$0.4660 1000:$0.3710 2500:$0.3070 5000:$0.2860 10000:$0.2750 25000:$0.2650
BSO330N02KGFUMA1	Infineon Technologies AG	Power Field-Effect Transistor, 4.2A I(D), 20V, 0.03ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant	12500	1000:$0.2400 500:$0.2500 100:$0.2600 25:$0.2700 1:$0.2900

Image	Part #	Description
	Mfr.#: BSO330N02K(330N2K) OMO.#: OMO-BSO330N02K-330N2K--1190	New and Original
	Mfr.#: BSO330N02KG OMO.#: OMO-BSO330N02KG-1190	Power Field-Effect Transistor, 4.2A I(D), 20V, 0.03ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
	Mfr.#: BSO330N02KGFUMA1 OMO.#: OMO-BSO330N02KGFUMA1-INFINEON-TECHNOLOGIES	MOSFET 2N-CH 20V 5.4A 8DSO
	Mfr.#: BSO330N02K G OMO.#: OMO-BSO330N02K-G-126	IGBT Transistors MOSFET N-Ch 20V 5.4A DSO-8 OptiMOS 2

BSO330N02KGFUMA1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes