DF1400R12IP4DBOSA1

Mfr. #:: DF1400R12IP4DBOSA1
Manufacturer:: Infineon Technologies
Description:: IGBT MODULE VCES 1200V 1400A
Lifecycle:: New from this manufacturer.
Datasheet:: DF1400R12IP4DBOSA1 Datasheet
Delivery:: DHL FedEx Ups TNT EMS
Payment:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

Product Attribute
Attribute Value

Tags: DF140, DF14, DF1

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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

DF1400R12IP4DBOSA1 Description

***et: Transistor IGBT Module N-CH 1200V 1400A 20V Screw Mount Tray

***ineon SCT: 1200 V PrimePACK™3 chopper IGBT module with Trench/Fieldstop IGBT4, increased Emitter Controlled 4 diode and NTC, AG-PRIME3-1, RoHS

***ment14 APAC: IGBT, HIG POW, 1200V, 1400A; Module Configuration:Single; Transistor Polarity:N Channel; DC Collector Current:1400A; Collector Emitter Voltage Vces:1.75V; Power Dissipation Pd:7.7kW; Collector Emitter Voltage V(br)ceo:1.2kV; Operating Temperature Range:-40°C to +150°C; Transistor Case Style:Module; No. of Pins:12; SVHC:No SVHC (20-Jun-2011); Power Dissipation Max:7.7kW

***ineon: 1200V PrimePACK3 chopper IGBT module with Trench/Fieldstop IGBT4, increased Emitter Controlled 4 diode and NTC. | Summary of Features: Extended Operation Temperature T(tvj op); High DC Stability; High Short Circuit Capability, Self Limiting Short Circuit Current; V(cesat) with positive Temperature Coefficient; Low V(cesat); 4kV AC 1min Insulation; Package with CTI > 400; High Creepage and Clearance Distances; High Power and Thermal Cycling Capability; Substrate for Low Thermal Resistance; UL recognized | Benefits: High Power Density; Standardized housing | Target Applications: drives; wind; solar; cav; ups

***ical: Trans IGBT Module N-CH 1200V 105A 350000mW 24-Pin EconoPIM3 Tray

***ineon SCT: EconoPIM™ 3 1200V three phase PIM IGBT module with IGBT3 and NTC, AG-ECONO3-3, RoHS

***ment14 APAC: IGBT MODULE, 1200V, ECONOPIM; Transistor Polarity:N Channel; DC Collector Current:105A; Emitter Saturation Voltage Vce(on):2.3V; Power

***ark: IGBT MODULE, 1200V, ECONOPIM; Continuous Collector Current:105A; Collector Emitter Saturation Voltage:2.3V; Power Dissipation:350W; Operating Temperature Max:125°C; IGBT Termination:Press Fit; Collector Emitter Voltage Max:1.2kV RoHS Compliant: Yes

***ineon: EconoPIM 3 1200V three phase PIM IGBT module with IGBT3 and NTC | Summary of Features: Low stray inductance module design; High reliability and power density; Copper base plate for optimized heat spread; Solderable pins; Low switching losses; High switching frequency; RoHS-compliant modules | Benefits: Compact module concept; Optimized customers development cycle time and cost; Configuration flexibility; Fast, reliable and low cost mounting concept | Target Applications: drives; medical; induction; aircon

***ark: IGBT Array & Module Transistor, Dual NPN, 580 A, 1.75 V, 2.4 kW, 1.2 kV, Module

*** Source Electronics: Trans IGBT Module N-CH 1200V 580A 2400000mW 7-Pin 62MM-1 Tray / IGBT MODULE 1200V 450A

***ure Electronics: FF450R12KT4 Series 1200 V 580 A Trench Field-Stop IGBT Module

***nell: IGBT MODULE, DUAL NPN, 1.75V, 580A; Transistor Polarity: Dual NPN; DC Collector Current: 580A; Collector Emitter Saturation Voltage Vce(on): 1.75V; Power Dissipation Pd: 2.4kW; Collector Emitter Voltage V(br)ceo: 1.2kV; Trans

***ineon: Our well-known 62mm C-series 1200V dual IGBT modules with fast trench/fieldstop IGBT4 and Emitter Controlled diode are the right choice for your design. | Summary of Features: Superior solution for frequency controlled inverter drives; UL/CSA Certification with UL1557 E83336; Operating temperature up to 150 C; Optimized switching characteristic like softness and reduced switching losses; Existing packages with higher current capability; RoHS compliant | Benefits: Flexibility; Optimal electrical performance; Highest reliability | Target Applications: drives; solar; cav; ups; induction-heating; welding

***p One Stop: Trans IGBT Module N-CH 1200V 200A 680000mW 20-Pin ECONO4-1 Tray

***ark: Igbt Module; Continuous Collector Current:150A; Collector Emitter Saturation Voltage:2.15V; Power Dissipation:680W; Operating Temperature Max:150°C; Igbt Termination:stud; Collector Emitter Voltage Max:1.2Kv; Product Range:- Rohs Compliant: Yes

***ineon: EconoPACK 4 1200V sixpack IGBT module with fast Trench/Fieldstop IGBT4, Emitter Controlled 4 diode, NTC and PressFIT Contact Technology | Summary of Features: Extended Operation Temperature T(vj op); Low Switching Losses; Low V(CEsat); V(CEsat) with positive Temperature Coefficient; Isolated Base Plate; Standard Housing | Benefits: Compact Modules; Easy and most reliable assembly; No Plugs and Cables required; Ideal for Low Inductive System Designs | Target Applications: drives; solar; cav; ups

***(Formerly Allied Electronics): VS-GB75YF120N; ECONO2 Dual Half Bridge IGBT Module; 100 A max; 1200 V; PCB Mount

***ical: Trans IGBT Module N-CH 1200V 100A 480000mW 22-Pin ECONO2 4PAK

***ark: IGBT MODULE, 1200V, 75A, 4PACK; Transistor Polarity:NPN; DC Collector Current:100A; Collector Emitter Voltage Vces:3.8V; Power Dissipation Pd:480W; Collector Emitter Voltage V(br)ceo:1.2kV; No. of Pins:35 ;RoHS Compliant: Yes

***ical: Trans IGBT Module N-CH 1200V 80A 463000mW 12-Pin MTP

***S: French Electronic Distributor since 1988

***nell: IGBT MODULE, 1200V, 80A, MTP; Transistor Polarity:NPN; DC Collector Current:80A; Collector Emitter Voltage Vces:5.35V; Power Dissipation Pd:463W; Collector Emitter Voltage V(br)ceo:1.2kV; Operating Temperature Min:-40°C; Operating Temperature Max:150°C; Transistor Case Style:MTP; No. of Pins:12; MSL:-; Operating Temperature Range:-40°C to +150°C

***el Electronic: VISHAY VS-GB75YF120UT IGBT Array & Module Transistor, NPN, 100 A, 3.8 V, 480 W, 1.2 kV, Module

***et: Trans IGBT Module N-CH 1.2KV 100A 35-Pin ECONO2 4PAK

***et Europe: IGBT 1200V 75A Fourpack HEXFRED ECONO2

***or: IGBT MOD 1200V 100A ECONO2 4PACK

***ment14 APAC: IGBT,4 PACK,1200V,75A,ECONO2; Transistor Polarity:NPN; DC Collector Current:100A; Collector Emitter Voltage Vces:3.8V; Power Dissipation Pd:480W; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor Case Style:Module; No. of Pins:33; SVHC:No SVHC (20-Jun-2011); Module Configuration:Quad; Power Dissipation Max:480W

Market price

Part #	Mfg.	Description	Stock	Price
DF1400R12IP4DBOSA1 DISTI # DF1400R12IP4DBOSA1-ND	Infineon Technologies AG	IGBT MODULE VCES 1200V 1400A RoHS: Not compliant Min Qty: 2 Container: Bulk	Temporarily Out of Stock	2:$631.5700
DF1400R12IP4DBOSA1 DISTI # DF1400R12IP4DBOSA1	Infineon Technologies AG	IGBT Module N-Ch 1200V 1400A - Bulk (Alt: DF1400R12IP4DBOSA1) Min Qty: 1 Container: Bulk	Americas - 0	1000:$563.0900 500:$573.2900 100:$593.2900 50:$615.4900 25:$624.1900 10:$633.0900 1:$642.2900
DF1400R12IP4DBOSA1 DISTI # DF1400R12IP4DBOSA1	Infineon Technologies AG	IGBT Module N-Ch 1200V 1400A - Trays (Alt: DF1400R12IP4DBOSA1) RoHS: Compliant Min Qty: 2 Container: Tray	Americas - 0	20:$572.0900 12:$586.1900 8:$600.9900 4:$616.6900 2:$624.7900
DF1400R12IP4D DISTI # 641-DF1400R12IP4D	Infineon Technologies AG	IGBT Modules IGBT MODULES 1200V 1400A	4	1:$641.1100 5:$602.4700
DF1400R12IP4DBOSA1	Infineon Technologies AG	Insulated Gate Bipolar Transistor, 1400A I(C), 1200V V(BR)CES, N-Channel RoHS: Compliant	86	1000:$583.1700 500:$613.8600 100:$639.0900 25:$666.4800 1:$717.7500

DF1400R12IP4DBOSA1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes