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SIHD7N60E-GE3

SIHD7N60E-GE3
Mfr. #:
SIHD7N60E-GE3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET 600V Vds 30V Vgs DPAK (TO-252)
Lifecycle:
New from this manufacturer.
Datasheet:
SIHD7N60E-GE3 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SIHD7N60E-GE3 DatasheetSIHD7N60E-GE3 Datasheet (P4-P6)SIHD7N60E-GE3 Datasheet (P7-P9)SIHD7N60E-GE3 Datasheet (P10)
ECAD Model:
More Information:
SIHD7N60E-GE3 more Information
Product Attribute
Attribute Value
Manufacturer:
Vishay
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
SMD/SMT
Package / Case:
TO-252-3
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
600 V
Id - Continuous Drain Current:
7 A
Rds On - Drain-Source Resistance:
600 mOhms
Vgs th - Gate-Source Threshold Voltage:
4 V
Vgs - Gate-Source Voltage:
30 V
Qg - Gate Charge:
20 nC
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
78 W
Configuration:
Single
Channel Mode:
Enhancement
Packaging:
Tube
Series:
E
Brand:
Vishay / Siliconix
Fall Time:
14 ns
Product Type:
MOSFET
Rise Time:
13 ns
Factory Pack Quantity:
3000
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
24 ns
Typical Turn-On Delay Time:
13 ns
Unit Weight:
0.050717 oz
Tags
SIHD7, SIHD, SIH
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We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 600V 7A 3-Pin(2+Tab) DPAK
***et Europe
Trans MOSFET N-CH 600V 7A 3-Pin DPAK
***ure Electronics
MOSFET 600V 600MOHM@10V 7A N-CH E-SRS
***ment14 APAC
MOSFET, N CH, 575V, 7A, TO-252-3
***i-Key
MOSFET N-CH 600V 7A TO-252
***ark
N-CHANNEL 600V
***nell
MOSFET, N-CH, 600V, 7A, DPAK; Transistor Polarity:N Channel; Continuous Drain Current Id:7A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.5ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:78W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:TO-252; No. of Pins:3; MSL:MSL 1 - Unlimited; Operating Temperature Range:-55°C to +150°C; Voltage Vgs Max:30V
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
E Series High Voltage MOSFETs
Vishay Siliconix E Series High Voltage MOSFETs are super junction N-Channel power MOSFETs with a 30% reduction in specific ON-Resistance versus the S Series MOSFETs. These E Series high-performance MOSFETs feature low ON-resistance (RDS(on)), low input capacitance (Ciss), reduced capacitive switching losses, and ultra-low gate charge (Qg). The E series MOSFETs are also available in 850VDS high voltage variants with 3A drain current (ID), low RDS(ON) of 0.82Ω, and low gate charge (Qg). These high-performance MOSFETs come in different packages like TO-247AC, TO-220AB, TO-220 FULLPAK, TO-247AC, D2PAK (TO-263), IPAK (TO-251), DPAK (TO-252), and IPAK (TO-251). Typical applications include server and telecom power supplies, lighting, industrial, battery chargers, renewable energy, and SMPS.
Part # Mfg. Description Stock Price
SIHD7N60E-GE3
DISTI # V99:2348_09218416		Vishay IntertechnologiesTrans MOSFET N-CH 600V 7A 3-Pin(2+Tab) DPAK
RoHS: Compliant		3000
  • 5000:$0.8775
  • 2500:$0.9173
  • 1000:$0.9386
  • 500:$1.1127
  • 100:$1.2602
  • 10:$1.6590
  • 1:$2.1913
SIHD7N60E-GE3
DISTI # V36:1790_09218416		Vishay IntertechnologiesTrans MOSFET N-CH 600V 7A 3-Pin(2+Tab) DPAK
RoHS: Compliant		0
  • 3000000:$0.8836
  • 1500000:$0.8861
  • 300000:$1.1050
  • 30000:$1.4870
  • 3000:$1.5500
SIHD7N60E-GE3
DISTI # SIHD7N60E-GE3-ND		Vishay SiliconixMOSFET N-CH 600V 7A TO-252
RoHS: Compliant
Min Qty: 1
Container: Bulk		1355In Stock
  • 5000:$0.8845
  • 2500:$0.9185
  • 1000:$0.9866
  • 500:$1.1907
  • 100:$1.4493
  • 10:$1.8030
  • 1:$2.0100
SIHD7N60E-GE3
DISTI # 27527136		Vishay IntertechnologiesTrans MOSFET N-CH 600V 7A 3-Pin(2+Tab) DPAK
RoHS: Compliant		3000
  • 7:$2.1913
SIHD7N60E-GE3
DISTI # SIHD7N60E-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 600V 7A 3-Pin DPAK (Alt: SIHD7N60E-GE3)
RoHS: Compliant
Min Qty: 3000		Europe - 2475
  • 30000:€0.7659
  • 18000:€0.8009
  • 12000:€0.9059
  • 6000:€1.1169
  • 3000:€1.5569
SIHD7N60E-GE3
DISTI # SIHD7N60E-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 600V 7A 3-Pin DPAK - Tape and Reel (Alt: SIHD7N60E-GE3)
RoHS: Not Compliant
Min Qty: 3000
Container: Reel		Americas - 0
    SIHD7N60E-GE3
    DISTI # 63W4108    		Vishay IntertechnologiesPower MOSFET, N Channel, 7 A, 650 V, 0.5 ohm, 10 V, 2 V RoHS Compliant: Yes2593
    • 500:$1.1400
    • 100:$1.3000
    • 50:$1.4300
    • 25:$1.5600
    • 10:$1.6900
    • 1:$2.0300
    SIHD7N60E-GE3
    DISTI # 78-SIHD7N60E-GE3    		Vishay IntertechnologiesMOSFET 600V Vds 30V Vgs DPAK (TO-252)
    RoHS: Compliant    		1048
    • 1:$2.0100
    • 10:$1.6700
    • 100:$1.2900
    • 500:$1.1300
    SIHD7N60E-E3
    DISTI # 78-SIHD7N60E-E3    		Vishay IntertechnologiesMOSFET 600V Vds 30V Vgs DPAK (TO-252)
    RoHS: Compliant    		0
    • 3000:$0.8750
    • 6000:$0.8430
    • 9000:$0.8100
    SIHD7N60E-GE3
    DISTI # 2283642    		Vishay IntertechnologiesMOSFET, N-CH, 600V, 7A, DPAK
    RoHS: Compliant    		2293
    • 5000:$1.3700
    • 2500:$1.3900
    • 1000:$1.4900
    • 500:$1.8000
    • 100:$2.1900
    • 10:$2.7200
    • 1:$3.0300
    SIHD7N60E-GE3
    DISTI # 2283642    		Vishay IntertechnologiesMOSFET, N-CH, 600V, 7A, DPAK2304
    • 500:£0.7760
    • 250:£0.8330
    • 100:£0.8880
    • 25:£1.1500
    • 5:£1.3900
    SIHD7N60E-GE3
    DISTI # XSKDRABV0041556    		Vishay Intertechnologies 
    RoHS: Compliant    		2400 in Stock0 on Order
    • 2400:$1.0700
    • 435:$1.1500
    SIHD7N60EGE3Vishay IntertechnologiesPower Field-Effect Transistor, 7A I(D), 609V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
    RoHS: Compliant    		3000
      SIHD7N60E-GE3Vishay IntertechnologiesMOSFET 600V Vds 30V Vgs DPAK (TO-252)
      RoHS: Compliant      		Americas - 3000
      • 50:$1.2450
      • 100:$1.1020
      • 250:$1.0020
      • 500:$0.9800
      • 1000:$0.9260
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      CRCW2512357RFKEG

      Mfr.#: CRCW2512357RFKEG

      OMO.#: OMO-CRCW2512357RFKEG-VISHAY-DALE

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      CRCW060350R0FKEA

      Mfr.#: CRCW060350R0FKEA

      OMO.#: OMO-CRCW060350R0FKEA-VISHAY-DALE

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      Availability
      Stock:
      Available
      On Order:
      1984
      Enter Quantity:
      Current price of SIHD7N60E-GE3 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
      Reference price (USD)
      Quantity
      Unit Price
      Ext. Price
      1
      $2.01
      $2.01
      10
      $1.67
      $16.70
      100
      $1.29
      $129.00
      500
      $1.13
      $565.00
      Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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