IPZA60R080P7XKSA1

Mfr. #:: IPZA60R080P7XKSA1
Manufacturer:: Infineon Technologies
Description:: MOSFET HIGH POWER_NEW
Lifecycle:: New from this manufacturer.
Datasheet:: IPZA60R080P7XKSA1 Datasheet
Delivery:: DHL FedEx Ups TNT EMS
Payment:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:: IPZA60R080P7XKSA1 more Information

Product Attribute
Attribute Value

Manufacturer:: Infineon

Product Category:: MOSFET

RoHS:: Y

Technology:: Si

Mounting Style:: Through Hole

Package / Case:: PG-TO-247-4

Number of Channels:: 1 Channel

Transistor Polarity:: N-Channel

Vds - Drain-Source Breakdown Voltage:: 600 V

Id - Continuous Drain Current:: 37 A

Rds On - Drain-Source Resistance:: 69 mOhms

Vgs th - Gate-Source Threshold Voltage:: 3 V

Vgs - Gate-Source Voltage:: 10 V

Qg - Gate Charge:: 51 nC

Minimum Operating Temperature:: - 55 C

Maximum Operating Temperature:: + 150 C

Pd - Power Dissipation:: 129 W

Configuration:: Single

Channel Mode:: Enhancement

Packaging:: Tube

Transistor Type:: 1 N-Channel

Brand:: Infineon Technologies

Fall Time:: 5 ns

Product Type:: MOSFET

Rise Time:: 8 ns

Factory Pack Quantity:: 240

Subcategory:: MOSFETs

Typical Turn-Off Delay Time:: 70 ns

Typical Turn-On Delay Time:: 15 ns

Part # Aliases:: IPZA60R080P7 SP001707740

Tags: IPZA60R0, IPZA, IPZ

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

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IPZA60R080P7XKSA1 Description

***ure Electronics: N-Channel 600 V 80 mOhm Industrial Grade CoolMOS P7 Mosfet - TO-247-4

***ineon: Summary of Features: 600V P7 enables excellent FOM R DS(on)xE oss andR DS(on)xQ G | Benefits: Excellent FOMs R DS(on)xQ G/R DS(on)xE oss enable higher efficiency | Target Applications: TV power supply; Industrial SMPS; Server; Telecom; Lighting

***ark: Mosfet, N-Ch, 600V, 37A, To-247; Transistor Polarity:n Channel; Continuous Drain Current Id:37A; Drain Source Voltage Vds:600V; On Resistance Rds(On):0.069Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.5V; Power Rohs Compliant: Yes

IPZA60R080P7XKSA1 More Information

600V CoolMOS P7 MOSFETs: Infineon 600V CoolMOS P7 MOSFETs are 7th generation devices and utilize revolutionary technology for high voltage power MOSFETs. The transistors are designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The 600V CoolMOS P7 combines the benefits of a fast switching SJ MOSFET with excellent ease of use. The 600V P7 feature very low ringing tendency, outstanding robustness of body diode against hard commutation and excellent ESD capability. Extremely low switching and conduction losses make switching applications even more efficient, compact and cooler.

CoolMOS™ 7 Superjunction MOSFETs: Infineon Technologies CoolMOS™ 7 Superjunction MOSFETs set new standards for energy efficiency, power density and ease of use. CoolMOS 7 technology is optimized for specific applications with innovative package concepts and various technologies. CoolMOS 7 MOSFETS are ideal for applications like making electric vehicle charging stations smaller with higher outputs resulting in faster car charging. Thanks to CoolMOS 7, new generations of adapters and chargers are smaller, lighter and more efficient. With CoolMOS 7, engineers can make renewable energy systems cheaper and more efficient.

CoolMOS™ P7 MOSFETs: Infineon Technologies CoolMOS™ P7 MOSFETs deliver best-in-class price/performance ratio with excellent ease-of-use to address challenges in various applications. The 700V and 800V CoolMOS P7 power MOSFETs have been developed for flyback-based low-power SMPS applications including adapter and charger, lighting, audio SMPS, AUX and industrial power. The 600V CoolMOS P7 power MOSFETs target not only low power but also high-power SMPS applications like solar inverters, server, telecomand EV charging stations. The P7 MOSFETs are fully optimized for hard- and soft-switching topologies.

Market price

Part #	Mfg.	Description	Stock	Price
IPZA60R080P7XKSA1 DISTI # V99:2348_18786393	Infineon Technologies AG	600V CoolMOS¿P7 Power Transistor	168	2640:$3.5700 720:$3.8700 240:$4.4879 25:$5.2089 10:$5.4650 1:$6.6407
IPZA60R080P7XKSA1 DISTI # IPZA60R080P7XKSA1-ND	Infineon Technologies AG	MOSFET TO247-4 RoHS: Compliant Min Qty: 1 Container: Tube	190In Stock	2640:$3.4850 720:$4.1552 240:$4.7717 25:$5.4956 10:$5.7640 1:$6.3800
IPZA60R080P7XKSA1 DISTI # 33655386	Infineon Technologies AG	600V CoolMOS¿P7 Power Transistor	240	240:$3.1977
IPZA60R080P7XKSA1 DISTI # 32416808	Infineon Technologies AG	600V CoolMOS¿P7 Power Transistor	240	240:$5.2812
IPZA60R080P7XKSA1 DISTI # 27012788	Infineon Technologies AG	600V CoolMOS¿P7 Power Transistor	168	2640:$3.5700 720:$3.8700 240:$4.4879 25:$5.2089 10:$5.4650 2:$6.6407
IPZA60R080P7XKSA1 DISTI # IPZA60R080P7XKSA1	Infineon Technologies AG	Trans MOSFET N-CH 650V 37A 4-Pin TO-247 Tube - Rail/Tube (Alt: IPZA60R080P7XKSA1) RoHS: Compliant Min Qty: 240 Container: Tube	Americas - 240	2400:$3.0900 1200:$3.1900 720:$3.2900 240:$3.3900 480:$3.3900
IPZA60R080P7XKSA1 DISTI # SP001707740	Infineon Technologies AG	Trans MOSFET N-CH 650V 37A 4-Pin TO-247 Tube (Alt: SP001707740) RoHS: Compliant Min Qty: 1 Container: Tube	Europe - 240	1000:€2.8900 100:€2.9900 500:€2.9900 50:€3.0900 25:€3.1900 10:€3.2900 1:€3.3900
IPZA60R080P7XKSA1 DISTI # 57AC6819	Infineon Technologies AG	MOSFET, N-CH, 600V, 37A, TO-247,Transistor Polarity:N Channel,Continuous Drain Current Id:37A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.069ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3.5V,Power RoHS Compliant: Yes	240	500:$3.9900 250:$4.3800 100:$4.5900 50:$4.9300 25:$5.2800 10:$5.5400 1:$6.1300
IPZA60R080P7XKSA1	Infineon Technologies AG	N-Channel 600 V 80 mOhm Industrial Grade CoolMOS P7 Mosfet - TO-247-4 RoHS: Not Compliant	240Tube	240:$3.2200
IPZA60R080P7XKSA1 DISTI # 726-IPZA60R080P7XKSA	Infineon Technologies AG	MOSFET HIGH POWER_NEW RoHS: Compliant	465	1:$6.0700 10:$5.4900 25:$5.2300 100:$4.5400 250:$4.3400 500:$3.9500
IPZA60R080P7XKSA1 DISTI # 2862300	Infineon Technologies AG	MOSFET, N-CH, 600V, 37A, TO-247 RoHS: Compliant	240	2640:$5.3900 720:$6.2700 240:$7.2000 25:$8.2900 10:$8.6900 1:$9.6100
IPZA60R080P7XKSA1 DISTI # 2862300	Infineon Technologies AG	MOSFET, N-CH, 600V, 37A, TO-247	240	500:£2.9000 250:£3.1700 100:£3.3300 10:£3.8300 1:£4.9100
IPZA60R080P7XKSA1 DISTI # XSFP00000136860	Infineon Technologies AG	RoHS: Compliant	480 in Stock0 on Order	480:$4.2900 240:$4.6000

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Availability

Stock:: 465
On Order:: 2448
Enter Quantity:

Current price of IPZA60R080P7XKSA1 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com

Reference price (USD)

Quantity
Unit Price
Ext. Price

1: ~~$6.07~~; ~~$6.07~~

10: ~~$5.49~~; ~~$54.90~~

25: ~~$5.23~~; ~~$130.75~~

100: ~~$4.54~~; ~~$454.00~~

250: ~~$4.34~~; ~~$1 085.00~~

500: ~~$3.95~~; ~~$1 975.00~~

Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.

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Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes