SKW20N60FKSA1

Mfr. #:: SKW20N60FKSA1
Manufacturer:: Infineon Technologies
Description:: IGBT Transistors IGBT PRODUCTS
Lifecycle:: New from this manufacturer.
Datasheet:: SKW20N60FKSA1 Datasheet
Delivery:: DHL FedEx Ups TNT EMS
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HTML Datasheet:: SKW20N60FKSA1 Datasheet SKW20N60FKSA1 Datasheet (P4-P6)SKW20N60FKSA1 Datasheet (P7-P9)SKW20N60FKSA1 Datasheet (P10-P12)SKW20N60FKSA1 Datasheet (P13)
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Product Attribute
Attribute Value

Manufacturer:: Infineon

Product Category:: IGBT Transistors

Technology:: Si

Package / Case:: TO-247-3

Packaging:: Tube

Brand:: Infineon Technologies

Product Type:: IGBT Transistors

Subcategory:: IGBTs

Part # Aliases:: SKW20N60 SKW20N60XK SP000012483

Tags: SKW20, SKW2, SKW

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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SKW20N60FKSA1 Description

*** Source Electronics: Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode

***ark: ; Transistor Type:IGBT; Transistor Polarity:N Channel; Continuous Collector Current, Ic:40A; Collector Emitter Saturation Voltage, Vce(sat):2.4V; Power Dissipation, Pd:179W; Package/Case:TO-247 ;RoHS Compliant: Yes

***ment14 APAC: IGBT, FAST; Transistor Type:IGBT; DC Collector Current:40A; Collector Emitter Voltage Vces:2.4V; Power Dissipation Pd:179W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-247; No. of Pins:3; Current Ic @ Vce Sat:20A; Current Ic Continuous a Max:40A; Current Temperature:25°C; Device Marking:SKW20N60; Fall Time tf:65ns; Full Power Rating Temperature:25°C; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-55°C; Lead Spacing:2.54mm; No. of Transistors:1; Package / Case:TO-247; Pin Format:1G, 2C, 3E; Power Dissipation Max:179W; Power Dissipation Pd:179W; Power Dissipation Pd:179W; Power Dissipation Ptot Max:179W; Pulsed Current Icm:80A; Rise Time:36ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:600V

***ure Electronics: IKW20N60H3 Series 600 V 40 A Third Generation High Speed Switching - TO-247-3

***ineon SCT: High speed 600 V, 20 A hard-switching TRENCHSTOP™ IGBT3 co-packed with free-wheeling diode in a TO247 package provides the best compromise between switching and conduction losses, PG-TO247-3, RoHS

***ment14 APAC: IGBT+ DIODE,600V,20A,TO247; Transistor Type:IGBT; DC Collector Current:20A; Collector Emitter Voltage Vces:2.4V; Power Dissipation Pd:170W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Min:-40°C; Operating Temperature Max:175°C; Transistor Case Style:TO-247; No. of Pins:3; Operating Temperature Range:-40°C to +175°C; Power Dissipation Max:170W

***ineon: Infineons high speed devices are used to reduce the size of the active components (25kHz --> 70kHz). Infineons HighSpeed 3 family provides the best compromise between switching and conduction losses. The key feature of this family is a MOSFET-like turn-off switching behavior, leading to low turn off losses. | Summary of Features: Designed specifically to replace planar MOSFETs in applications switching at frequencies below 70kHz; Low switching losses for high efficiency; Excellent V ce(sat) behavior thanks to the famous Infineon TRENCHSTOP technology; Fast switching behavior with low EMI emissions; Optimized diode for target applications, meaning further improvement in switching losses; Low gate resistor selection possible (down to 5) whilst maintaining excellent switching behaviour; Short circuit capability; Offering T j(max) of 175C; Packaged with and without freewheeling diode for increased design freedom | Benefits: Excellent cost/performance; Low switching and conduction losses; Very good EMI behavior; A small gate resistor for reduced delay time and voltage overshoot; Smaller die sizes -> smaller packages; Best-in-class IGBT efficiency and EMI behavior | Target Applications: Welding Inverters; Solar Inverters; UPS; All hard switching applications

***ical: Trans IGBT Chip N=-CH 600V 40A 166000mW 3-Pin(3+Tab) TO-247 Tube

***ure Electronics: IKW20N60T Series 600 V 40 A Through Hole TRENCHSTOP IGBT -PG-TO247-3

***ineon SCT: 600 V IGBT with anti-parallel diode in TO-247 package, PG-TO247-3, RoHS

***nell: IGBT, N, 600V, 20A, TO-247; DC Collector Current: 40A; Collector Emitter Saturation Voltage Vce(on): 2.05V; Power Dissipation Pd: 166W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-247; Operating Temper

***ark: IGBT, N, 600V, 20A, TO-247; Transistor Type:IGBT; Voltage, Vces:600V; Current, Ic Continuous a Max:20A; Voltage, Vce Sat Max:2.05V; Power Dissipation:166W; Case Style:TO-247; Termination Type:Through Hole; Transistor Polarity:N; RoHS Compliant: Yes

***trelec: Configuration = Single / Continuous Collector Current (Ic) A = 20 / Collector-Emitter Voltage (Vceo) V = 600 / Collector Emitter Saturation Voltage Max. (Vce(sat)) V = 1.5 / Emitter Leakage Current nA = 100 / Power Dissipation (Pd) W = 166 / Gate Emitter Voltage (Vge) V = 20 / Operating Temperature Min. °C = -40 / Operating Temperature Max. °C = 175 / Package Type = TO-247 / Pins = 3 / Mounting Type = Through Hole / Packaging = Tube / Reflow Temperature Max. °C = 260

***ineon: Infineon's TRENCHSTOP IGBT technology leads to significant improvement of static as well as dynamic performance of the device due to combination of trench top-cell and filed stop concept. Combination of IGBT with soft recovery Emitter Controlled Diode further minimizes the turn-on losses. The highest efficiency is reached due to the best compromise between switching and conduction losses. | Summary of Features: Lowest V ce(sat) drop for lower conduction losses; Low switching losses; Easy parallel switching capability due to positive temperature coefficient in V ce(sat); Very soft, fast recovery anti-parallel Emitter Controlled Diode; High ruggedness, temperature stable behavior; Low EMI emissions; Low gate charge; Very tight parameter distribution | Benefits: Highest efficiency low conduction and switching losses; Comprehensive portfolio in 600V and 1200V for flexibility of design; High device reliability | Target Applications: UPS; Solar Inverters; Major Home Appliances; Welding; Air conditioning; Industrial Drives; Other hard switching applications

***ark: Igbt Single Transistor, 40 A, 2 V, 165 W, 600 V, To-247, 3 Rohs Compliant: Yes

***ical: Trans IGBT Chip N=-CH 600V 40A 165000mW 3-Pin(3+Tab) TO-247 Rail

***nell: IGBT,N CH,600V,40A,TO-247; DC Collector Current: 40A; Collector Emitter Saturation Voltage Vce(on): 2V; Power Dissipation Pd: 165W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-247; No. of Pins: 3Pins; O

***rchild Semiconductor: The HGTG20N60B3 is a Generation III MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower onstate voltage drop varies only moderately between 25°C and 150°C. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors.

***ical: Trans IGBT Chip N-CH 600V 40A 165000mW 3-Pin(3+Tab) TO-247AB Rail

***ure Electronics: FGH20N60SFD Series 600 V 40 A Flange Mount Field Stop IGBT - TO-247

*** Source Electronics: High current capability, High input impedance | IGBT 600V 40A 165W TO247

***rchild Semiconductor: Using novel field stop IGBT technology, Fairchild’s field stop IGBTs offer the optimum performance for solar inverter, UPS, welder and PFC applications where low conduction and switching losses are essential.

***nell: IGBT,N CH,FAST,W/DIO,600V,40A,TO247; Transistor Type:IGBT; DC Collector Current:40A; Collector Emitter Voltage Vces:600V; Power Dissipation Pd:165W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-247AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Power Dissipation Max:165W

***icroelectronics: Trench gate field-stop IGBT, V series 600 V, 20 A very high speed

***ical: Trans IGBT Chip N-CH 600V 40A 167000mW 3-Pin(3+Tab) TO-247 Tube

***nell: IGBT, SINGLE, 600V, 40A, TO-247; DC Collector Current: 40A; Collector Emitter Saturation Voltage Vce(on): 1.8V; Power Dissipation Pd: 167W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-247; No. of Pins:

***ical: Trans IGBT Chip N=-CH 600V 40A 165000mW 3-Pin(3+Tab) TO-247AB Tube

***ure Electronics: FGH20N60UFD Series 600 V 40 A Flange Mount Field Stop IGBT - TO-247

***rchild Semiconductor: Using novel field stop IGBT technology, Fairchild’s field stop IGBTs offer the optimum performance for solar inverter, UPS, welder and PFC applications where low conduction and switching losses are essential.

***nell: IGBT,N CH,FAST,W/DIO,600V,40A,TO247; Transistor Type:IGBT; DC Collector Current:40A; Collector Emitter Voltage Vces:600V; Power Dissipation Pd:165W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-247AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Power Dissipation Max:165W

Market price

Part #	Mfg.	Description	Stock	Price
SKW20N60FKSA1 DISTI # SKW20N60FKSA1-ND	Infineon Technologies AG	IGBT 600V 40A 179W TO247-3 RoHS: Compliant Min Qty: 240 Container: Tube	Limited Supply - Call
SKW20N60FKSA1 DISTI # SKW20N60FKSA1	Infineon Technologies AG	- Bulk (Alt: SKW20N60FKSA1) RoHS: Compliant Min Qty: 100 Container: Bulk	Americas - 0	1000:$3.0900 500:$3.1900 300:$3.2900 200:$3.3900 100:$3.5900
SKW20N60 DISTI # 726-SKW20N60	Infineon Technologies AG	IGBT Transistors FAST IGBT NPT TECH 600V 20A RoHS: Compliant	0
SKW20N60FKSA1 DISTI # N/A	Infineon Technologies AG	IGBT Transistors IGBT PRODUCTS	0
SKW20N60FKSA1	Infineon Technologies AG	Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel, TO-247AC RoHS: Compliant	430	1000:$3.3000 500:$3.4800 100:$3.6200 25:$3.7700 1:$4.0700

Image	Part #	Description
	Mfr.#: SKW20N60HSFKSA1 OMO.#: OMO-SKW20N60HSFKSA1	IGBT Transistors IGBT PRODUCTS
	Mfr.#: SKW20N60FKSA1 OMO.#: OMO-SKW20N60FKSA1	IGBT Transistors IGBT PRODUCTS
	Mfr.#: SKW20N60HS OMO.#: OMO-SKW20N60HS-126	IGBT Transistors HIGH SPEED NPT TECH 600V 20A
	Mfr.#: SKW20N60 OMO.#: OMO-SKW20N60-126	IGBT Transistors FAST IGBT NPT TECH 600V 20A
	Mfr.#: SKW20N60C3 OMO.#: OMO-SKW20N60C3-1190	New and Original
	Mfr.#: SKW20N60FKSA1 OMO.#: OMO-SKW20N60FKSA1-INFINEON-TECHNOLOGIES	IGBT 600V 40A 179W TO247-3
	Mfr.#: SKW20N60HS K20N60HS OMO.#: OMO-SKW20N60HS-K20N60HS-1190	New and Original
	Mfr.#: SKW20N60HSFKSA1 OMO.#: OMO-SKW20N60HSFKSA1-INFINEON-TECHNOLOGIES	IGBT 600V 36A 178W TO247-3
	Mfr.#: SKW20N60T OMO.#: OMO-SKW20N60T-1190	New and Original

SKW20N60FKSA1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes