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SKW20N60FKSA1

P1-P3P4-P6P7-P9P10-P12P13-P13
SKW20N60
10 Rev. 2_3 12.06.2013
I
F
, FORWARD CURRENT
0.0V 0.5V 1.0V 1.5V 2.0V
0A
5A
10A
15A
20A
25A
30A
35A
40A
150°C
-55°C
25°C
100°C
V
F
, FORWARD VOLTAGE
-40°C 0°C 40°C 80°C 120°C
1.0V
1.5V
2.0V
V
F
, FORWARD VOLTAGE T
j
, JUNCTION TEMPERATURE
Figure 25. Typical diode forward current as
a function of forward voltage
Figure 26. Typical diode forward voltage as
a function of junction temperature
Z
thJCD
, TRANSIENT THERMAL IMPEDANCE
1µs 10µs 100µs 1ms 10ms 100ms 1s
10
-3
K/W
10
-2
K/W
10
-1
K/W
10
0
K/W
0.01
0.02
0.05
0.1
0.2
single pulse
D=0.5
t
p
, PULSE WIDTH
Figure 27. Diode transient thermal
impedance as a function of pulse width
(D = t
p
/ T)
I
F
= 20A
I
F
=
40
A
C
1
=
1
/
R
1
R
1
R
2
C
2
=
2
/
R
2
R , ( 1 /W )
, ( s )
0.358 9.02*10
-
2
0.367 9.42*10
-
3
0.329 9.93*10
-
4
0.216 1.19*10
-
4
0.024 1.92*10
-
5
SKW20N60
11 Rev. 2_3 12.06.2013
SKW20N60
12 Rev. 2_3 12.06.2013
I
r
r
m
90%
I
r r m
10%
I
r r m
di /dt
F
t
r r
I
F
i,v
t
Q
S
Q
F
t
S
t
F
V
R
di /dt
r r
Q =Q Q
r r S F
+
t =t t
r r S F
+
Figure C. Definition of diodes
switching characteristics
p(t)
1
2
n
T
(
t
)
j
1
1
2
2
n
n
T
C
r r
r
r
rr
Figure D. Thermal equivalent
circuit
Figure E. Dynamic test circuit
Leakage inductance L
=180nH
and Stray capacity C
=900pF.
Figure A. Definition of switching times
Figure B. Definition of switching losses
Published by
Infineon Technologies AG,
P1-P3P4-P6P7-P9P10-P12P13-P13

SKW20N60FKSA1

Mfr. #:
Buy SKW20N60FKSA1
Manufacturer:
Infineon Technologies
Description:
IGBT Transistors IGBT PRODUCTS
Lifecycle:
New from this manufacturer.
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