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SKW20N60FKSA1

P1-P3P4-P6P7-P9P10-P12P13-P13
SKW20N60
7 Rev. 2_3 12.06.2013
E, SWITCHING ENERGY LOSSES
0A 10A 20A 30A 40A 50A
0.0mJ
0.5mJ
1.0mJ
1.5mJ
2.0mJ
2.5mJ
3.0mJ
E
on
*
E
off
E
ts
*
E, SWITCHING ENERGY LOSSES
0 10 20 30 40 50 60
0.0mJ
0.5mJ
1.0mJ
1.5mJ
2.0mJ
2.5mJ
3.0mJ
E
ts
*
E
on
*
E
off
I
C
, COLLECTOR CURRENT R
G
, GATE RESISTOR
Figure 13. Typical switching energy losses
as a function of collector current
(inductive load, T
j
= 150C, V
CE
= 400V,
V
GE
= 0/+15V, R
G
= 16,
Dynamic test circuit in Figure E)
Figure 14. Typical switching energy losses
as a function of gate resistor
(inductive load, T
j
= 150C, V
CE
= 400V,
V
GE
= 0/+15V, I
C
= 20A,
Dynamic test circuit in Figure E)
E, SWITCHING ENERGY LOSSES
0°C 50°C 100°C 150°C
0.0mJ
0.2mJ
0.4mJ
0.6mJ
0.8mJ
1.0mJ
1.2mJ
1.4mJ
1.6mJ
E
ts
*
E
on
*
E
off
Z
thJC
, TRANSIENT THERMAL IMPEDANCE
1µs 10µs 100µs 1ms 10ms 100ms 1s
10
-4
K/W
10
-3
K/W
10
-2
K/W
10
-1
K/W
10
0
K/W
0.01
0.02
0.05
0.1
0.2
single pulse
D=0.5
T
j
, JUNCTION TEMPERATURE
t
p
, PULSE WIDTH
Figure 15. Typical switching energy losses
as a function of junction temperature
(inductive load, V
CE
= 400V, V
GE
= 0/+15V,
I
C
= 20A, R
G
= 16,
Dynamic test circuit in Figure E)
Figure 16. IGBT transient thermal
impedance as a function of pulse width
(D = t
p
/ T)
*) E
on
and E
ts
include losses
due to diode recovery.
*) E
on
and E
ts
include losses
due to diode recovery.
*) E
on
and E
ts
include losses
due to diode recovery.
C
1
=
1
/
R
1
R
1
R
2
C
2
=
2
/
R
2
R , ( 1 /W )
, ( s )
0.1882 0.1137
0.3214 2.24*10
-
2
0.1512 7.86*10
-
4
0.0392 9.41*10
-
5
SKW20N60
8 Rev. 2_3 12.06.2013
V
GE
, GATE-EMITTER VOLTAGE
0nC 25nC 50nC 75nC 100nC 125nC
0V
5V
10V
15V
20V
25V
480V
120V
C, CAPACITANCE
0V 10V 20V 30V
10pF
100pF
1nF
C
rss
C
oss
C
iss
Q
GE
, GATE CHARGE V
CE
, COLLECTOR-EMITTER VOLTAGE
Figure 17. Typical gate charge
(I
C
= 20A)
Figure 18. Typical capacitance as a
function of collector-emitter voltage
(V
GE
= 0V, f = 1MHz)
t
sc
, SHORT CIRCUIT WITHSTAND TIME
10V 11V 12V 13V 14V 15V
0 s
5 s
10 s
15 s
20 s
25
s
I
C(sc)
, SHORT CIRCUIT COLLECTOR CURRENT
10V 12V 14V 16V 18V 20V
0A
50A
100A
150A
200A
250A
300A
350A
V
GE
, GATE-EMITTER VOLTAGE V
GE
, GATE-EMITTER VOLTAGE
Figure 19. Short cir
cuit withstand time as a
function of gate-emitter voltage
(V
CE
= 600V, start at T
j
= 25C)
Figure 20. Typical short circuit collector
current as a function of gate-emitter voltage
(V
CE
600V, T
j
= 150C)
SKW20N60
9 Rev. 2_3 12.06.2013
t
rr
, REVERSE RECOVERY TIME
100A/s 300A/s 500A/s 700A/s 900A/s
0ns
100ns
200ns
300ns
400ns
500ns
600ns
I
F
= 10A
I
F
= 20A
I
F
= 40A
Q
rr
, REVERSE RECOVERY CHARGE
100A/s 300A/s 500A/s 700A/s 900A/s
0nC
500nC
1000nC
1500nC
2000nC
2500nC
I
F
= 10A
I
F
= 20A
I
F
= 40A
di
F
/dt, DIODE CURRENT SLOPE di
F
/dt, DIODE CURRENT SLOPE
Figure 21. Typical reverse recovery time as
a function of diode current slope
(V
R
= 200V, T
j
= 125C,
Dynamic test circuit in Figure E)
Figure 22. Typical reverse recovery charge
as a function of diode current slope
(V
R
= 200V, T
j
= 125C,
Dynamic test circuit in Figure E)
I
rr
, REVERSE RECOVERY CURRENT
100A/s 300A/s 500A/s 700A/s 900A/s
0A
4A
8A
12A
16A
20A
24A
I
F
= 10A
I
F
= 40A
I
F
= 20A
di
rr
/dt
,
DIODE PEAK RATE OF FALL
OF RE
VERSE RECOVERY CURRE
NT
100A/s 300A/s 500A/s 700A/s 900A/s
0A/s
200A/s
400A/s
600A/s
800A/s
1000A/
s
di
F
/dt, DIODE CURRENT SLOPE di
F
/dt, DIODE CURRENT SLOPE
Figure 23. Typical reverse recovery current
as a function of diode current slope
(V
R
= 200V, T
j
= 125C,
Dynamic test circuit in Figure E)
Figure
24. Typical diode peak rate of fall of
reverse recovery current as a function of
diode current slope
(V
R
= 200V, T
j
= 125C,
Dynamic test circuit in Figure E)
P1-P3P4-P6P7-P9P10-P12P13-P13

SKW20N60FKSA1

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Manufacturer:
Infineon Technologies
Description:
IGBT Transistors IGBT PRODUCTS
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