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SKW20N60FKSA1

P1-P3P4-P6P7-P9P10-P12P13-P13
SKW20N60
1 Rev. 2_3 12.06.2013
Fast IGBT in NPT-technology with soft, fast recovery anti-parallel Emitter Controlled
Diode
75% lower E
off
compared to previous generation
combined with low conduction losses
Short circuit withstand time – 10 s
Designed for:
- Motor controls
- Inverter
NPT-Technology for 600V applications offers:
- very tight parameter distribution
- high ruggedness, temperature stable behaviour
- parallel switching capability
Very soft, fast recovery anti-parallel Emitter Controlled
Diode
Pb-free lead plating; RoHS compliant
Qualified according to JEDEC
1
for target applications
Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
Type V
CE
I
C
V
CE(sat)
T
j
Marking Package
SKW20N60 600V 20A 2.4V
150C
K20N60 PG-TO-247-3
Maximum Ratings
Parameter Symbol Value Unit
Collector-emitter voltage
V
CE
600 V
DC collector current
T
C
= 25C
T
C
= 100C
I
C
40
20
A
Pulsed collector current, t
p
limited by T
jmax
I
Cpul s
80
Turn off safe operating area
V
CE
600V, T
j
150C
-
80
Diode forward current
T
C
= 25C
T
C
= 100C
I
F
40
20
Diode pulsed current, t
p
limited by T
jmax
I
Fp ul s
80
Gate-emitter voltage
V
GE
20
V
Short circuit withstand time
2
V
GE
= 15V, V
CC
600V, T
j
150C
t
SC
10
s
Power dissipation
T
C
= 25C
P
tot
179 W
Soldering temperature
wavesoldering, 1.6 mm (0.063 in.) from case for 10s
T
s
260 °C
Operating junction and storage temperature
T
j
, T
st g
-55...+150
C
1
J-STD-020 and JESD-022
2
Allowed number of short circuits: <1000; time between short circuits: >1s.
G
C
E
PG-TO-247-3
SKW20N60
2 Rev. 2_3 12.06.2013
Thermal Resistance
Parameter Symbol Conditions Max. Value Unit
Characteristic
IGBT thermal resistance,
junction – case
R
thJ C
0.7 K/W
Diode thermal resistance,
junction – case
R
thJ C D
1.3
Thermal resistance,
junction – ambient
R
thJ A
40
Electrical Characteristic, at T
j
= 25 C, unless otherwise specified
Parameter Symbol Conditions
Value
Unit
min. Typ. max.
Static Characteristic
Collector-emitter breakdown voltage
V
(BR ) C ES
V
GE
=0V, I
C
=500A
600 - - V
Collector-emitter saturation voltage
V
CE( s at)
V
GE
= 15V, I
C
=20A
T
j
=25C
T
j
=150C
1.7
-
2
2.4
2.4
2.9
Diode forward voltage
V
F
V
GE
=0V, I
F
=20A
T
j
=25C
T
j
=150C
1.2
-
1.4
1.25
1.8
1.65
Gate-emitter threshold voltage
V
GE( t h)
I
C
=700A,V
CE
=V
GE
3 4 5
Zero gate voltage collector current
I
CE S
V
CE
=600V,V
GE
=0V
T
j
=25C
T
j
=150C
-
-
-
-
40
2500
A
Gate-emitter leakage current
I
GE S
V
CE
=0V,V
GE
=20V
- - 100 nA
Transconductance
g
fs
V
CE
=20V, I
C
=20A
- 14 - S
Dynamic Characteristic
Input capacitance
C
iss
V
CE
=25V,
V
GE
=0V,
f=1MHz
- 1100 1320 pF
Output capacitance
C
os s
- 107 128
Reverse transfer capacitance
C
rs s
- 63 76
Gate charge
Q
Ga t e
V
CC
=480V, I
C
=20A
V
GE
=15V
- 100 130 nC
Internal emitter inductance
measured 5mm (0.197 in.) from case
L
E
- 13 - nH
Short circuit collector current
1)
I
C( S C )
V
GE
=15V,t
SC
10s
V
CC
600V,
T
j
150C
- 200 - A
1)
Allowed number of short circuits: <1000; time between short circuits: >1s.
SKW20N60
3 Rev. 2_3 12.06.2013
Switching Characteristic, Inductive Load, at T
j
=25 C
Parameter Symbol Conditions
Value
Unit
min. typ. max.
IGBT Characteristic
Turn-on delay time
t
d( o n )
T
j
=25C,
V
CC
=400V,I
C
=20A,
V
GE
=0/15V,
R
G
=16 ,
L
1)
=180nH,
C
1)
=900pF
Energy losses include
“tail” and diode
reverse recovery.
- 36 46 ns
Rise time
t
r
- 30 36
Turn-off delay time
t
d( o f f)
- 225 270
Fall time
t
f
- 54 65
Turn-on energy
E
on
- 0.44 0.53 mJ
Turn-off energy
E
off
- 0.33 0.43
Total switching energy
E
ts
- 0.77 0.96
Anti-Parallel Diode Characteristic
Diode reverse recovery time
t
rr
t
S
t
F
T
j
=25C,
V
R
=200V, I
F
=20A,
di
F
/dt=200A/s
-
-
-
300
30
270
-
-
-
ns
Diode reverse recovery charge
Q
rr
- 490 - nC
Diode peak reverse recovery current
I
rr m
- 5.5 - A
Diode peak rate of fall of reverse
recovery current during t
b
di
rr
/dt
- 180 -
A/s
Switching Characteristic, Inductive Load, at T
j
=150 C
Parameter Symbol Conditions
Value
Unit
min. typ. max.
IGBT Characteristic
Turn-on delay time
t
d( o n )
T
j
=150C
V
CC
=400V,I
C
=20A,
V
GE
=0/15V,
R
G
=16 ,
L
1)
=180nH,
C
1)
=900pF
Energy losses include
“tail” and diode
reverse recovery.
- 36 46 ns
Rise time
t
r
- 30 36
Turn-off delay time
t
d( o f f)
- 250 300
Fall time
t
f
- 63 76
Turn-on energy
E
on
- 0.67 0.81 mJ
Turn-off energy
E
off
- 0.49 0.64
Total switching energy
E
ts
- 1.12 1.45
Anti-Parallel Diode Characteristic
Diode reverse recovery time
t
rr
t
S
t
F
T
j
=150C
V
R
=200V, I
F
=20A,
di
F
/dt=200A/s
-
-
-
410
45
365
-
-
-
ns
Diode reverse recovery charge
Q
rr
- 1270 - nC
Diode peak reverse recovery current
I
rr m
- 8.5 - A
Diode peak rate of fall of reverse
recovery current during t
b
di
rr
/dt
- 200 -
A/s
1)
Leakage inductance L
and Stray capacity C
due to dynamic test circuit in Figure E.
P1-P3P4-P6P7-P9P10-P12P13-P13

SKW20N60FKSA1

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Manufacturer:
Infineon Technologies
Description:
IGBT Transistors IGBT PRODUCTS
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