IRFB23N20DPBF

IRFB23N20DPBF
Mfr. #:
IRFB23N20DPBF
Manufacturer:
Infineon Technologies
Description:
MOSFET MOSFT 200V 24A 100mOhm 57nC
Lifecycle:
New from this manufacturer.
Datasheet:
IRFB23N20DPBF Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IRFB23N20DPBF DatasheetIRFB23N20DPBF Datasheet (P4-P6)IRFB23N20DPBF Datasheet (P7-P9)IRFB23N20DPBF Datasheet (P10-P12)
ECAD Model:
More Information:
IRFB23N20DPBF more Information
Product Attribute
Attribute Value
Manufacturer:
Infineon
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
Through Hole
Package / Case:
TO-220-3
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
200 V
Id - Continuous Drain Current:
24 A
Rds On - Drain-Source Resistance:
100 mOhms
Vgs th - Gate-Source Threshold Voltage:
5.5 V
Vgs - Gate-Source Voltage:
30 V
Qg - Gate Charge:
57 nC
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 175 C
Pd - Power Dissipation:
170 W
Configuration:
Single
Channel Mode:
Enhancement
Packaging:
Tube
Height:
15.65 mm
Length:
10 mm
Transistor Type:
1 N-Channel
Width:
4.4 mm
Brand:
Infineon Technologies
Forward Transconductance - Min:
13 S
Fall Time:
16 ns
Product Type:
MOSFET
Rise Time:
32 ns
Factory Pack Quantity:
1000
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
26 ns
Typical Turn-On Delay Time:
14 ns
Part # Aliases:
SP001564048
Unit Weight:
0.211644 oz
Tags
IRFB23N20DP, IRFB23N2, IRFB23, IRFB2, IRFB, IRF
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We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Components
In a Tube of 5, N-Channel MOSFET, 24 A, 200 V, 3-Pin TO-220AB Infineon IRFB23N20DPBF
***ure Electronics
Single N-Channel 200 V 100 mOhm 57 nC HEXFET® Power Mosfet - TO-220-3
***ernational Rectifier
200V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
***ied Electronics & Automation
MOSFET, 200V, 24A, 100 mOhm, 57 nC Qg, TO-220AB
***ical
Trans MOSFET N-CH 200V 24A 3-Pin(3+Tab) TO-220AB
***nell
N CHANNEL MOSFET, 200V, 24A, TO-220AB
*** Source Electronics
MOSFET N-CH 200V 24A TO-220AB
***eco
200V 23.000A TO-220 <AZ
***ronik
N-CHANNEL 200V 24A 100mOhm
***ment14 APAC
N CHANNEL MOSFET, 200V, 24A, TO-220AB; Transistor Polarity:N Channel; Continuous Drain Current Id:24A; Drain Source Voltage Vds:200V; On Resistance Rds(on):0.1ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:5.5V; MSL:-
***ark
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:200V; Continuous Drain Current, Id:24A; On Resistance, Rds(on):100mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-220AB ;RoHS Compliant: Yes
***ineon
Benefits: RoHS Compliant; Industry-leading quality; Fully Characterized Avalanche Voltage and Current; Low Gate-to-Drain Charge to Reduce Switching Losses; Fully Characterized Capacitance Including Effective Coss to Simplify Design
200-250V HEXFET® Power MOSFETs
Infineon 200-250V HEXFET® Power MOSFETs offer a broad range of MOSFETs in various packages, current and RDS(on) ratings. These 200-250V HEXFET® Power MOSFETs utilize the latest processing techniques to achieve low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Infineon HEXFET® Power MOSFETs are known for provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.Learn More
Part # Mfg. Description Stock Price
IRFB23N20DPBF
DISTI # 20990297
Infineon Technologies AGTrans MOSFET N-CH 200V 24A 3-Pin(3+Tab) TO-220AB Tube
RoHS: Compliant
1845
  • 1500:$0.6822
  • 800:$0.6884
  • 700:$0.7136
IRFB23N20DPBF
DISTI # IRFB23N20DPBF-ND
Infineon Technologies AGMOSFET N-CH 200V 24A TO-220AB
RoHS: Compliant
Min Qty: 1
Container: Tube
884In Stock
  • 1000:$0.9809
  • 500:$1.1839
  • 100:$1.5221
  • 10:$1.8940
  • 1:$2.1000
IRFB23N20DPBF
DISTI # C1S322000488173
Infineon Technologies AGTrans MOSFET N-CH 200V 24A 3-Pin(3+Tab) TO-220AB Tube
RoHS: Compliant
1858
  • 1000:$0.9010
  • 100:$1.2800
  • 5:$1.9200
IRFB23N20DPBF
DISTI # IRFB23N20DPBF
Infineon Technologies AGTrans MOSFET N-CH 200V 24A 3-Pin(3+Tab) TO-220AB - Rail/Tube (Alt: IRFB23N20DPBF)
RoHS: Compliant
Min Qty: 700
Container: Tube
Americas - 330
  • 700:$0.7079
  • 800:$0.6829
  • 1500:$0.6579
  • 3500:$0.6359
  • 7000:$0.6249
IRFB23N20DPBF
DISTI # 63J6713
Infineon Technologies AGN CHANNEL MOSFET, 200V, 24A, TO-220AB,Transistor Polarity:N Channel,Continuous Drain Current Id:24A,Drain Source Voltage Vds:200V,On Resistance Rds(on):100mohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:5.5V,MSL:- , RoHS Compliant: Yes79
  • 1:$1.3600
  • 10:$1.3600
  • 100:$1.3400
  • 500:$1.2700
  • 1000:$1.2100
  • 2500:$1.1400
  • 5000:$1.1200
IRFB23N20DPBF
DISTI # 38K2484
Infineon Technologies AGMOSFET Transistor, N Channel, 24 A, 200 V, 100 mohm, 10 V, 5.5 V , RoHS Compliant: Yes235
  • 1:$1.8100
  • 10:$1.5400
  • 100:$1.3400
  • 500:$1.2700
  • 1000:$1.2100
  • 2500:$1.1400
  • 5000:$1.1200
IRFB23N20DPBF.
DISTI # 27AC6759
Infineon Technologies AGPLANAR_MOSFETS , ROHS COMPLIANT: YES0
  • 1:$1.8100
  • 10:$1.5400
  • 100:$1.3400
  • 500:$1.2700
  • 1000:$1.2100
  • 2500:$1.1400
  • 5000:$1.1200
IRFB23N20DPBF
DISTI # 70017019
Infineon Technologies AGMOSFET,Power,N-Ch,VDSS 200V,RDS(ON) 0.1Ohm,ID 24A,TO-220AB,PD 170W,VGS +/-30V
RoHS: Compliant
0
  • 1:$4.0500
  • 10:$3.5700
  • 100:$3.1200
  • 500:$2.7000
  • 1000:$2.3800
IRFB23N20DPBFInfineon Technologies AGPower Field-Effect Transistor, 24A I(D), 200V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
RoHS: Compliant
50
  • 1000:$0.9100
  • 500:$0.9600
  • 100:$1.0000
  • 25:$1.0400
  • 1:$1.1200
IRFB23N20DPBFInternational Rectifier 
RoHS: Not Compliant
361
  • 1000:$0.9100
  • 500:$0.9600
  • 100:$1.0000
  • 25:$1.0400
  • 1:$1.1200
IRFB23N20DPBF
DISTI # 942-IRFB23N20DPBF
Infineon Technologies AGMOSFET MOSFT 200V 24A 100mOhm 57nC
RoHS: Compliant
817
  • 1:$1.8100
  • 10:$1.5400
  • 100:$1.2300
  • 500:$1.0800
  • 1000:$0.8920
  • 2000:$0.8310
  • 5000:$0.8000
  • 10000:$0.7690
IRFB23N20DPBF
DISTI # 8655787P
Infineon Technologies AGMOSFET N-CH 200V 24A HEXFET SMPS TO220AB, TU90
  • 100:£0.9600
  • 250:£0.9020
  • 500:£0.8400
  • 1000:£0.6480
IRFB23N20DPBF
DISTI # 8655787
Infineon Technologies AGMOSFET N-CH 200V 24A HEXFET SMPS TO220AB, TU125
  • 5:£1.4200
  • 100:£0.9600
  • 250:£0.9020
  • 500:£0.8400
  • 1000:£0.6480
IRFB23N20DPBFInternational Rectifier 
RoHS: Compliant
Europe - 100
    IRFB23N20DPBF
    DISTI # 8648743
    Infineon Technologies AGMOSFET, N, 200V, 24A, TO-220
    RoHS: Compliant
    304
    • 2:$3.0600
    • 25:$2.6600
    • 50:$2.1700
    • 100:$1.8400
    IRFB23N20DPBF
    DISTI # 8648743
    Infineon Technologies AGMOSFET, N, 200V, 24A, TO-220
    RoHS: Compliant
    304
    • 5:£1.2900
    • 25:£1.1800
    • 100:£0.9440
    • 250:£0.9110
    • 500:£0.8250
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    Availability
    Stock:
    Available
    On Order:
    1984
    Enter Quantity:
    Current price of IRFB23N20DPBF is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
    Reference price (USD)
    Quantity
    Unit Price
    Ext. Price
    1
    $1.81
    $1.81
    10
    $1.53
    $15.30
    100
    $1.23
    $123.00
    500
    $1.07
    $535.00
    1000
    $0.89
    $892.00
    Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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