STW15NM60N

STW15NM60N
Mfr. #:
STW15NM60N
Manufacturer:
STMicroelectronics
Description:
MOSFET N-CH 600V 14A TO-247
Lifecycle:
New from this manufacturer.
Datasheet:
STW15NM60N Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:
STW15NM60N more Information STW15NM60N Product Details
Product Attribute
Attribute Value
Manufacturer
ST
Product Category
FETs - Single
Tags
STW15NM60N, STW15NM, STW15N, STW15, STW1, STW
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We provide 90-360 days warranty.

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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***el Electronic
±0.4°C Temperature Sensor with Daisy-Chain UART, EEPROM, and Alert Function 8-SOIC -55 to 125
***icroelectronics
N-channel 600V - 0.27Ohm - 13A - D2/I2PAK - TO-220/FP - TO-247
***r Electronics
Power Field-Effect Transistor, 14A I(D), 600V, 0.299ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
***nell
MOSFET, N CH, 600V, 14A, TO-247; Transistor Polarity: N Channel; Continuous Drain Current Id: 7A; Drain Source Voltage Vds: -; On Resistance Rds(on): 0.27ohm; Rds(on) Test Voltage Vgs: -; Threshold Voltage Vgs: 3V; Power Dissi
***ark
MOSFET N CH 600V 14A TO-247; Transistor Polarity:N Channel; On State Resistance:270mohm; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-247; Case Style:TO-247; Cont Current Id:7A; Termination Type:Through Hole;;RoHS Compliant: Yes
***icroelectronics
Automotive-grade N-channel 600 V, 0.26 Ohm, 13 A MDmesh(TM) II Power MOSFET in TO-247 package
***ure Electronics
STW19NM60 Series 600 V 13 A 285 mOhm Through Hole N-Ch Power MOSFET - TO-247-3
***et
Trans MOSFET N-CH 600V 13A 3-Pin TO-247 Tube
***(Formerly Allied Electronics)
Power MOSFET Nchannel MDmesh II 600V 13A
*** Electronic Components
MOSFET N-Ch 600 V 0.27 Ohm 13 A MDmesh(TM)
***icroelectronics SCT
Automotive Power Discrete, 600V, 13A, TO-247, Tube
***el Electronic
Phase Locked Loops - PLL Reduction SSCGs COM
***S
French Electronic Distributor since 1988
***ure Electronics
N-Channel 650 V 0.29 Ohm 130 W Flange Mount Power Mosfet - TO-247
***icroelectronics
N-channel 600 V, 0.25 Ohm typ., 13 A FDmesh(TM) II Power MOSFET (with fast diode) in TO-247 package
***r Electronics
Power Field-Effect Transistor, 13A I(D), 600V, 0.29ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
***icroelectronics
N-channel 600 V, 0.175 Ohm typ., 18 A MDmesh DM2 Power MOSFET in TO-247 package
***ure Electronics
Single N-Channel 600 V 0.2 Ohm 29 nC 150 W Silicon Flange Mount Mosfet TO-247-3
***ark
MOSFET, N-CH, 600V, 18A, TO-247; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:18A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 18A I(D), 600V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
***nell
MOSFET, N-CH, 600V, 18A, TO-247; Transistor Polarity: N Channel; Continuous Drain Current Id: 18A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.175ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 150W; Transistor Case Style: TO-247; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: FDmesh II Plus Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (07-Jul-2017)
***ure Electronics
Single N-Channel 600 V 0.4 Ohms Flange Mount Power Mosfet - TO-247AC
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 16A I(D), 600V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC
***ment14 APAC
N CHANNEL MOSFET, 600V, 16A, TO-247; Tra; N CHANNEL MOSFET, 600V, 16A, TO-247; Transistor Polarity:N Channel; Continuous Drain Current Id:16A; Drain Source Voltage Vds:600V; On Resistance Rds(on):400mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; No. of Pins:3
***nell
MOSFET, N, 600V, 16A, TO-247AC; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:600V; Current, Id Cont:16A; Resistance, Rds On:0.4ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:4V; Case Style:TO-247AC; Termination Type:Through Hole; Current, Idm Pulse:64A; Lead Spacing:5.45mm; No. of Pins:3; Power Dissipation:280W; Power, Pd:280W; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Thermal Resistance, Junction to Case A:0.45°C/W; Transistors, No. of:1; Voltage, Vds:600V; Voltage, Vds Max:600V
***ure Electronics
Single N-Channel 600 V 0.4 Ohms Flange Mount Power Mosfet - TO-247
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 16A I(D), 600V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC
***nell
MOSFET, N TO-247AC 600V 16A; Transistor Polarity:N Channel; Continuous Drain Current Id:16A; Drain Source Voltage Vds:600V; On Resistance Rds(on):400mohm; Power Dissipation Pd:280W; Transistor Case Style:TO-247AC; No. of Pins:3; Current Temperature:25°C; Full Power Rating Temperature:25°C; Junction to Case Thermal Resistance A:0.45°C/W; Lead Spacing:5.45mm; No. of Transistors:1; Package / Case:TO-247AC; Power Dissipation Pd:280W; Power Dissipation Pd:280W; Pulse Current Idm:64A; Voltage Vds:600V
***(Formerly Allied Electronics)
IRFP17N50LPBF N-channel MOSFET Transistor; 16 A; 500 V; 3-Pin TO-247AC
***ure Electronics
IRFP17N50L Series N-Channel 500 V 0.28 Ohm 220 W Power Mosfet - TO-247AC
***nell
MOSFET, N, 500V, 16A, TO-247AC; Transistor Polarity: N Channel; Continuous Drain Current Id: 16A; Drain Source Voltage Vds: 500V; On Resistance Rds(on): 320ohm; Rds(on) Test Voltage Vgs: -; Threshold Voltage Vgs: 5V; Power Dissipation Pd: 220W; Transistor Case Style: TO-247AC; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; Junction to Case Thermal Resistance A: 0.56°C/W; On State resistance @ Vgs = 10V: 320mohm; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Pulse Current Idm: 64A; Voltage Vds Typ: 500V; Voltage Vgs Rds on Measurement: 10V
Part # Mfg. Description Stock Price
STW15NM60N
DISTI # 497-7618-5-ND
STMicroelectronicsMOSFET N-CH 600V 14A TO-247
RoHS: Compliant
Min Qty: 1
Container: Tube
537In Stock
  • 500:$4.4741
  • 100:$5.3400
  • 10:$6.4950
  • 1:$7.2200
STW15NM60ND
DISTI # 497-8452-5-ND
STMicroelectronicsMOSFET N-CH 600V 14A TO-247
RoHS: Compliant
Min Qty: 1
Container: Tube
391In Stock
  • 120:$5.1078
  • 30:$5.6600
  • 1:$6.9000
STW15NM60ND
DISTI # STW15NM60ND
STMicroelectronicsTrans MOSFET N-CH 600V 14A 3-Pin(3+Tab) TO-247 Tube (Alt: STW15NM60ND)
RoHS: Compliant
Min Qty: 30
Container: Tube
Europe - 0
  • 30:€1.6379
  • 60:€1.3649
  • 120:€1.2599
  • 180:€1.1699
  • 300:€1.0919
STW15NM60N
DISTI # 511-STW15NM60N
STMicroelectronicsMOSFET N Ch 600V 0.270 ohm 14A
RoHS: Compliant
0
    STW15NM60ND
    DISTI # 511-STW15NM60ND
    STMicroelectronicsMOSFET N-channel 600 V FDMesh
    RoHS: Compliant
    0
      STW15NM60NDST Microwave CorporationPower Field-Effect Transistor, 14A I(D), 600V, 0.299ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC
      RoHS: Compliant
      Europe - 540
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        Availability
        Stock:
        Available
        On Order:
        3500
        Enter Quantity:
        Current price of STW15NM60N is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
        Reference price (USD)
        Quantity
        Unit Price
        Ext. Price
        1
        $6.71
        $6.71
        10
        $6.38
        $63.76
        100
        $6.04
        $604.00
        500
        $5.70
        $2 852.25
        1000
        $5.37
        $5 368.90
        Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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