IPB60R190P6ATMA1

Mfr. #:: IPB60R190P6ATMA1
Manufacturer:: Infineon Technologies
Description:: MOSFET N-CH 600V TO263-3
Lifecycle:: New from this manufacturer.
Datasheet:: IPB60R190P6ATMA1 Datasheet
Delivery:: DHL FedEx Ups TNT EMS
Payment:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

Product Attribute
Attribute Value

Manufacturer: Infineon Technologies

Product Category: Transistors - FETs, MOSFETs - Single

Packaging: Reel

Part-Aliases: IPB60R190P6 SP001364462

Unit-Weight: 0.068654 oz

Mounting-Style: SMD/SMT

Package-Case: TO-263-3

Technology: Si

Configuration: 1 N-Channel

Pd-Power-Dissipation: 151 W

Maximum-Operating-Temperature: + 150 C

Minimum-Operating-Temperature: - 55 C

Fall-Time: 7 ns

Rise-Time: 8 ns

Vgs-Gate-Source-Voltage: +/- 20 V

Id-Continuous-Drain-Current: 20.2 A

Vds-Drain-Source-Breakdown-Voltage: 600 V

Vgs-th-Gate-Source-Threshold-Voltage: 3.5 V

Rds-On-Drain-Source-Resistance: 445 mOhms

Transistor-Polarity: N-Channel

Typical-Turn-Off-Delay-Time: 45 ns

Typical-Turn-On-Delay-Time: 15 ns

Qg-Gate-Charge: 37 nC

Channel-Mode: Enhancement

Tags: IPB60R190, IPB60R19, IPB60R1, IPB60R, IPB60, IPB6, IPB

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IPB60R190P6ATMA1 Description

***ure Electronics: Single N-Channel 600 V 190 mOhm 37 nC CoolMOS Power Mosfet - D2PAK

***ical: Trans MOSFET N-CH 600V 20.2A 3-Pin(2+Tab) D2PAK T/R

***ineon: Infineons CoolMOS P6 product family is designed to enable higher system efficiency whilst being easy to design in. CoolMOS P6 closes the gap between technologies which focus on delivering ultimate performance and those which concentrate more on ease-of-use. | Summary of Features: Reduced gate charge (Q g); Higher V th; Good body diode ruggedness; Optimized integrated R g; Improved dv/dt from 50V/ns; CoolMOS quality with over 12 years manufacturing experience in superjunction technology | Benefits: Improved effciency especially in light load condition; Better efficiency in soft switching applications due to earlier turn-off; Suitable for hard- & soft-switching topologies; Optimized balance of efficiency and ease of use and good controllability of switching behavior; High robustness and better efficiency; Outstanding quality & reliability | Target Applications: PFC stages for server, telecom rectifier, PC silverbox, gaming consoles; PWM stages (TTF, LLC) for server, telecom rectifier, PC silverbox, gaming consoles

Market price

Part #	Mfg.	Description	Stock	Price
IPB60R190P6ATMA1 DISTI # V72:2272_09156918	Infineon Technologies AG	Trans MOSFET N-CH 600V 20.2A 3-Pin(2+Tab) D2PAK T/R RoHS: Compliant	299	75000:$1.0948 30000:$1.1870 15000:$1.3189 6000:$1.3272 3000:$1.3395 1000:$1.3463 500:$1.3766 250:$1.5367 100:$1.7045 50:$1.8171 25:$2.1126 10:$2.1988 1:$2.7325
IPB60R190P6ATMA1 DISTI # IPB60R190P6ATMA1TR-ND	Infineon Technologies AG	MOSFET N-CH 600V TO263-3 RoHS: Compliant Min Qty: 1000 Container: Tape & Reel (TR)	Limited Supply - Call
IPB60R190P6ATMA1 DISTI # IPB60R190P6ATMA1CT-ND	Infineon Technologies AG	MOSFET N-CH 600V TO263-3 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	Limited Supply - Call
IPB60R190P6ATMA1 DISTI # IPB60R190P6ATMA1DKR-ND	Infineon Technologies AG	MOSFET N-CH 600V TO263-3 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Limited Supply - Call
IPB60R190P6ATMA1 DISTI # 26196097	Infineon Technologies AG	Trans MOSFET N-CH 600V 20.2A 3-Pin(2+Tab) D2PAK T/R RoHS: Compliant	299	6:$2.7325
IPB60R190P6ATMA1 DISTI # SP001364462	Infineon Technologies AG	Trans MOSFET N-CH 650V 20.2A 3-Pin TO-263 T/R (Alt: SP001364462) RoHS: Compliant Min Qty: 1000 Container: Tape and Reel	Europe - 0	6000:€1.0900 10000:€1.0900 4000:€1.1900 2000:€1.4900 1000:€1.8900
IPB60R190P6ATMA1 DISTI # 726-IPB60R190P6ATMA1	Infineon Technologies AG	MOSFET HIGH POWER_LEGACY RoHS: Compliant	0	1:$2.6500 10:$2.2500 100:$1.8000 500:$1.5800 1000:$1.3100 2000:$1.2200 5000:$1.1700

Related products

Image	Part #	Description
	Mfr.#: IPB60R190C6ATMA1 OMO.#: OMO-IPB60R190C6ATMA1	MOSFET N-Ch 600V 20.2A D2PAK-2 CoolMOS C6
	Mfr.#: IPB60R199CP OMO.#: OMO-IPB60R199CP	MOSFET N-Ch 650V 16A D2PAK-2 CoolMOS CP
	Mfr.#: IPB60R190C6 6R190C6 OMO.#: OMO-IPB60R190C6-6R190C6-1190	New and Original
	Mfr.#: IPB60R190C6 (6R190C6) OMO.#: OMO-IPB60R190C6-6R190C6--1190	New and Original
	Mfr.#: IPB60R190C6S OMO.#: OMO-IPB60R190C6S-1190	New and Original
	Mfr.#: IPB60R190P6 OMO.#: OMO-IPB60R190P6-1190	MOSFET HIGH POWER_LEGACY
	Mfr.#: IPB60R190P6ATMA1 OMO.#: OMO-IPB60R190P6ATMA1-INFINEON-TECHNOLOGIES	MOSFET N-CH 600V TO263-3
	Mfr.#: IPB60R199CP OMO.#: OMO-IPB60R199CP-1190	Trans MOSFET N-CH 650V 16A 3-Pin TO-263 T/R (Alt: IPB60R199CP)
	Mfr.#: IPB60R199CPATMA1 OMO.#: OMO-IPB60R199CPATMA1-INFINEON-TECHNOLOGIES	MOSFET N-CH 650V 16A TO-263
	Mfr.#: IPB60R199CR OMO.#: OMO-IPB60R199CR-1190	New and Original

Availability

Stock:: Available
On Order:: 5500
Enter Quantity:

Current price of IPB60R190P6ATMA1 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com

Reference price (USD)

Quantity
Unit Price
Ext. Price

1: ~~$1.64~~; ~~$1.64~~

10: ~~$1.56~~; ~~$15.60~~

100: ~~$1.48~~; ~~$147.80~~

500: ~~$1.40~~; ~~$697.95~~

1000: ~~$1.31~~; ~~$1 313.80~~

Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.

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IPB60R190P6ATMA1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes