IPU80R600P7AKMA1

Mfr. #:: IPU80R600P7AKMA1
Manufacturer:: Infineon Technologies
Description:: MOSFET N-CH 800V 8A TO251-3
Lifecycle:: New from this manufacturer.
Datasheet:: IPU80R600P7AKMA1 Datasheet
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More Information:: IPU80R600P7AKMA1 more Information

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Tags: IPU80, IPU8, IPU

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IPU80R600P7AKMA1 Description

***ure Electronics: Single N-Channel 800 V 600 mOhm 20 nC CoolMOS Power Mosfet - IPAK

***ical: 800V CoolMOS P7 Power Transistor

***i-Key: MOSFET N-CH 800V 8A TO251-3

***ronik: N-CH 800V 8,0A 600mOhm TO251-3

***et Europe: LOW POWER_NEW

***ark: Mosfet, N-Ch, 800V, 8A, To-251; Transistor Polarity:n Channel; Continuous Drain Current Id:8A; Drain Source Voltage Vds:800V; On Resistance Rds(On):0.51Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Rohs Compliant: Yes

***ment14 APAC: Prices include import duty and tax. MOSFET, N-CH, 800V, 8A, TO-251; Transistor Polarity:N Channel; Continuous Drain Current Id:8A; Drain Source Voltage Vds:800V; On Resistance Rds(on):0.51ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:60W; Transistor Case Style:TO-251; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:CoolMOS P7 Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)

***nell: MOSFET, CA-N, 800V, 8A, TO-251; Polarità Transistor:Canale N; Corrente Continua di Drain Id:8A; Tensione Drain Source Vds:800V; Resistenza di Attivazione Rds(on):0.51ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:3V; Dissipazione di Potenza Pd:60W; Modello Case Transistor:TO-251; No. di Pin:3Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:CoolMOS P7 Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)

***ineon: 800V CoolMOS TM P7 series is a perfect fit for low power SMPS applications by fully addressing market needs in performance, ease-of-use and price/performance ratio. It mainly focuses on flyback applications including adapter and charger, LED driver, audio SMPS, AUX and industrial power. | Summary of Features: Best-in-class FOM R DS(on) * E oss; reduced Q g, C iss and C oss; Best-in-class DPAK R DS(on) of 280m; Best-in-class V (GS)th of 3V and smallest V (GS)th variation of 0.5V; Integrated Zener diode ESD protection up to Class 2 (HBM); Best-in-class quality and reliability; Fully optimized portfolio | Benefits: 0.1% to 0.6% efficiency gain and 2C to 8C lower MOSFET temperature as compared to CoolMOS C3; Enabling higher power density designs, BOM savings and lower assembly cost; Easy to drive and to design-in; Better production yield by reducing ESD related failures; Less production issues and reduced field returns; Easy to select right parts for fine tuning of designs | Target Applications: Adapter; LED; Audio; Industrial SMPS; AUX power

IPU80R600P7AKMA1 More Information

CoolMOS™ 7 Superjunction MOSFETs: Infineon Technologies CoolMOS™ 7 Superjunction MOSFETs set new standards for energy efficiency, power density and ease of use. CoolMOS 7 technology is optimized for specific applications with innovative package concepts and various technologies. CoolMOS 7 MOSFETS are ideal for applications like making electric vehicle charging stations smaller with higher outputs resulting in faster car charging. Thanks to CoolMOS 7, new generations of adapters and chargers are smaller, lighter and more efficient. With CoolMOS 7, engineers can make renewable energy systems cheaper and more efficient.

CoolMOS™ Power Transistors: Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.

CoolMOS™ P7 MOSFETs: Infineon Technologies CoolMOS™ P7 MOSFETs deliver best-in-class price/performance ratio with excellent ease-of-use to address challenges in various applications. The 700V and 800V CoolMOS P7 power MOSFETs have been developed for flyback-based low-power SMPS applications including adapter and charger, lighting, audio SMPS, AUX and industrial power. The 600V CoolMOS P7 power MOSFETs target not only low power but also high-power SMPS applications like solar inverters, server, telecomand EV charging stations. The P7 MOSFETs are fully optimized for hard- and soft-switching topologies.

800V CoolMOS P7 MOSFETs: Infineon 800V CoolMOS P7 MOSFETs combine best-in-class performance with ease-of-use. The P7 set a new benchmark in 800V super junction technologies. The transistors offer up to 0.6 percent efficiency gain and 2°C to 8°C lower MOSFET temperature. The transistors feature optimized device parameters like over 50% reduction in Eoss and Qg, reduced Ciss and Coss. The CoolMOS P7 also enable higher power density designs through lower switching losses and better DPAK RDS(on) products. The CoolMOS P7 are a perfect fit for low-power SMPS applications.

Market price

Part #	Mfg.	Description	Stock	Price
IPU80R600P7AKMA1 DISTI # 33733772	Infineon Technologies AG	800V CoolMOS P7 Power Transistor	1500	1500:$1.0828
IPU80R600P7AKMA1 DISTI # IPU80R600P7AKMA1-ND	Infineon Technologies AG	MOSFET N-CH 800V 8A TO251-3 RoHS: Compliant Min Qty: 1 Container: Tube	1490In Stock	6000:$0.6742 3000:$0.7097 1500:$0.7604 100:$1.1660 25:$1.4196 10:$1.4950 1:$1.6700
IPU80R600P7AKMA1 DISTI # SP001644622	Infineon Technologies AG	LOW POWER_NEW (Alt: SP001644622) RoHS: Compliant Min Qty: 1	Europe - 1500	1000:€0.6089 500:€0.6199 100:€0.6369 50:€0.6499 25:€0.7459 10:€0.8929 1:€1.0649
IPU80R600P7AKMA1 DISTI # IPU80R600P7AKMA1	Infineon Technologies AG	LOW POWER_NEW - Rail/Tube (Alt: IPU80R600P7AKMA1) RoHS: Compliant Min Qty: 1500 Container: Tube	Americas - 0	15000:$0.6129 9000:$0.6239 6000:$0.6459 3000:$0.6699 1500:$0.6949
IPU80R600P7AKMA1 DISTI # 24AC9064	Infineon Technologies AG	MOSFET, N-CH, 800V, 8A, TO-251,Transistor Polarity:N Channel,Continuous Drain Current Id:8A,Drain Source Voltage Vds:800V,On Resistance Rds(on):0.51ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,Power Dissipation RoHS Compliant: Yes	171	1000:$0.7320 500:$0.9270 100:$1.0400 10:$1.3600 1:$1.6000
IPU80R600P7AKMA1 DISTI # 726-IPU80R600P7AKMA1	Infineon Technologies AG	MOSFET RoHS: Compliant	105	1:$1.5800 10:$1.3500 100:$1.0300 500:$0.9180 1000:$0.7250
IPU80R600P7AKMA1	Infineon Technologies AG	Single N-Channel 800 V 600 mOhm 20 nC CoolMOS Power Mosfet - IPAK RoHS: Not Compliant	1500Tube	1500:$0.6600
IPU80R600P7AKMA1 DISTI # 2771342	Infineon Technologies AG	MOSFET, N-CH, 800V, 8A, TO-251	176	500:£0.6660 250:£0.7060 100:£0.7460 10:£0.9790 1:£1.1500
IPU80R600P7AKMA1 DISTI # 2771342	Infineon Technologies AG	MOSFET, N-CH, 800V, 8A, TO-251 RoHS: Compliant	171	6000:$1.0200 3000:$1.0700 1500:$1.1500 100:$1.7600 25:$2.1400 10:$2.2600 1:$2.5200
IPU80R600P7AKMA1 DISTI # XSFP00000130824	Infineon Technologies AG	RoHS: Compliant	3000 in Stock0 on Order	3000:$0.8800 1500:$0.9429
IPU80R600P7AKMA1 DISTI # XSKDRABV0021277	Infineon Technologies AG	RoHS: Compliant	4500 in Stock0 on Order	4500:$0.8467 1500:$0.9071

IPU80R600P7AKMA1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes