SI2338DS-T1-GE3

Mfr. #:: SI2338DS-T1-GE3
Manufacturer:: Vishay / Siliconix
Description:: MOSFET 30V Vds 20V Vgs SOT-23
Lifecycle:: New from this manufacturer.
Datasheet:: SI2338DS-T1-GE3 Datasheet
Delivery:: DHL FedEx Ups TNT EMS
Payment:: T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:: SI2338DS-T1-GE3 Datasheet SI2338DS-T1-GE3 Datasheet (P4-P6)SI2338DS-T1-GE3 Datasheet (P7-P9)SI2338DS-T1-GE3 Datasheet (P10)
ECAD Model:
More Information:: SI2338DS-T1-GE3 more Information

Product Attribute
Attribute Value

Manufacturer:: Vishay

Product Category:: MOSFET

RoHS:: Y

Technology:: Si

Mounting Style:: SMD/SMT

Package / Case:: SOT-23-3

Number of Channels:: 1 Channel

Transistor Polarity:: N-Channel

Vds - Drain-Source Breakdown Voltage:: 30 V

Id - Continuous Drain Current:: 6 A

Rds On - Drain-Source Resistance:: 28 mOhms

Vgs th - Gate-Source Threshold Voltage:: 1.2 V

Vgs - Gate-Source Voltage:: 10 V

Qg - Gate Charge:: 8.2 nC

Minimum Operating Temperature:: - 55 C

Maximum Operating Temperature:: + 150 C

Pd - Power Dissipation:: 2.5 W

Configuration:: Single

Channel Mode:: Enhancement

Tradename:: TrenchFET

Packaging:: Reel

Series:: SI2

Transistor Type:: 1 N-Channel

Brand:: Vishay / Siliconix

Forward Transconductance - Min:: 24 S

Fall Time:: 7 ns

Product Type:: MOSFET

Rise Time:: 11 ns

Factory Pack Quantity:: 3000

Subcategory:: MOSFETs

Typical Turn-Off Delay Time:: 20 ns

Typical Turn-On Delay Time:: 3 ns

Part # Aliases:: SI2338DS-GE3

Unit Weight:: 0.000282 oz

Tags: SI2338, SI233, SI23, SI2

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Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
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Step3:
Packaging Boxes

SI2338DS-T1-GE3 Description

***ied Electronics & Automation: Si2338DS-T1-GE3 N-channel MOSFET Transistor; 6 A; 30 V; 3-Pin SOT-23

***Components: In a Pack of 20, N-Channel MOSFET, 6 A, 30 V, 3-Pin SOT-23 Vishay Si2338DS-T1-GE3

***ure Electronics: N-Channel 30 V 28 mOhm 13 nC Surface Mount Power Mosfet - SOT-23-3

***ical: Trans MOSFET N-CH 30V 6A 3-Pin SOT-23 T/R

***et: N-CH MOSFET SOT-23 30V 28MOHM @ 10V

***i-Key: MOSFET N-CH 30V 6A SOT23

***ronik: N-CH 30V 6A 28mOhm SOT23

***: 30V N CHANNEL

***ark: Transistor Polarity:n Channel; Continuous Drain Current Id:6A; Drain Source Voltage Vds:30V; On Resistance Rds(On):0.023Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.5V; Power Dissipation Pd:2.5W; No. Of Pins:3Pins Rohs Compliant: No

***ment14 APAC: Prices include import duty and tax. MOSFET, N-CH, 30V, 6A, SOT-23; Transistor Polarity:N Channel; Continuous Drain Current Id:6A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.023ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.5V; Power Dissipation Pd:2.5W; Transistor Case Style:SOT-23; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:TrenchFET Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (20-Jun-2016)

***nell: MOSFET, CA-N, 30V, 6A, SOT-23; Polarità Transistor:Canale N; Corrente Continua di Drain Id:6A; Tensione Drain Source Vds:30V; Resistenza di Attivazione Rds(on):0.023ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:2.5V; Dissipazione di Potenza Pd:2.5W; Modello Case Transistor:SOT-23; No. di Pin:3Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:TrenchFET Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (20-Jun-2016)

SI2338DS-T1-GE3 More Information

SI2 Series TrenchFET® Power MOSFETs: Vishay SI2 Series TrenchFET® Power MOSFETs are N-channel MOSFETs designed with 30V V(ds) and are 100% tested gate resistance(Rg). These MOSFETs have gate resistance tested for 1MHz frequency with 0.2Ω to 1.4Ω. These SI2 series MOSFETs operate from -55ºC to 150ºC junction and storage temperature. The SI2 series are ideal for DC/DC converter, Load switch, and power management.

Market price

Part #	Mfg.	Description	Stock	Price
SI2338DS-T1-GE3 DISTI # V72:2272_09216814	Vishay Intertechnologies	Trans MOSFET N-CH 30V 5.5A 3-Pin SOT-23 T/R RoHS: Compliant	65	25:$0.4348 10:$0.4513 1:$0.5834
SI2338DS-T1-GE3 DISTI # V36:1790_09216814	Vishay Intertechnologies	Trans MOSFET N-CH 30V 5.5A 3-Pin SOT-23 T/R RoHS: Compliant	0	3000000:$0.1568 1500000:$0.1570 300000:$0.1677 30000:$0.1845 3000:$0.1872
SI2338DS-T1-GE3 DISTI # SI2338DS-T1-GE3CT-ND	Vishay Siliconix	MOSFET N-CH 30V 6A SOT23 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	1072In Stock	1000:$0.2114 500:$0.2736 100:$0.3482 10:$0.4660 1:$0.5400
SI2338DS-T1-GE3 DISTI # SI2338DS-T1-GE3DKR-ND	Vishay Siliconix	MOSFET N-CH 30V 6A SOT23 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	1072In Stock	1000:$0.2114 500:$0.2736 100:$0.3482 10:$0.4660 1:$0.5400
SI2338DS-T1-GE3 DISTI # SI2338DS-T1-GE3TR-ND	Vishay Siliconix	MOSFET N-CH 30V 6A SOT23 RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	On Order	30000:$0.1546 15000:$0.1630 6000:$0.1751 3000:$0.1872
SI2338DS-T1-GE3 DISTI # 27050969	Vishay Intertechnologies	Trans MOSFET N-CH 30V 5.5A 3-Pin SOT-23 T/R RoHS: Compliant	65	44:$0.5834
SI2338DS-T1-GE3 DISTI # SI2338DS-T1-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 30V 6A 3-Pin SOT-23 T/R - Cut TR (SOS) (Alt: SI2338DS-T1-GE3) RoHS: Not Compliant Min Qty: 1 Container: Cut Tape	Americas - 54	1500:$0.1716 750:$0.1769 375:$0.1825 188:$0.1885 94:$0.1949 47:$0.2018 1:$0.2091
SI2338DS-T1-GE3 DISTI # SI2338DS-T1-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 30V 6A 3-Pin SOT-23 T/R (Alt: SI2338DS-T1-GE3) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel	Europe - 0	30000:€0.1469 18000:€0.1579 12000:€0.1709 6000:€0.1989 3000:€0.2919
SI2338DS-T1-GE3 DISTI # SI2338DS-T1-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 30V 6A 3-Pin SOT-23 T/R - Tape and Reel (Alt: SI2338DS-T1-GE3) RoHS: Not Compliant Min Qty: 3000 Container: Reel	Americas - 0	30000:$0.1469 18000:$0.1509 12000:$0.1549 6000:$0.1619 3000:$0.1669
SI2338DS-T1-GE3 DISTI # SI2338DS-T1-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 30V 6A 3-Pin SOT-23 T/R (Alt: SI2338DS-T1-GE3) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel	Asia - 0
SI2338DS-T1-GE3 DISTI # 01AC4979	Vishay Intertechnologies	MOSFET, N-CH, 30V, 6A, SOT-23,Transistor Polarity:N Channel,Continuous Drain Current Id:6A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.023ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.5V,Power Dissipation RoHS Compliant: Yes	11320	1000:$0.2170 500:$0.2700 250:$0.2960 100:$0.3210 50:$0.3540 25:$0.3860 10:$0.4190 1:$0.5430
SI2338DS-T1-GE3. DISTI # 30AC0143	Vishay Intertechnologies	Transistor Polarity:N Channel,Continuous Drain Current Id:6A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.023ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.5V,Power Dissipation Pd:2.5W,No. of Pins:3Pins RoHS Compliant: No	0	1:$0.1980 3000:$0.1980
SI2338DS-T1-GE3 DISTI # 70459511	Vishay Siliconix	Si2338DS-T1-GE3 N-channel MOSFET Transistor,6 A,30 V,3-Pin SOT-23 RoHS: Compliant	0	3000:$0.3930 6000:$0.3760
SI2338DS-T1-GE3 DISTI # 78-SI2338DS-T1-GE3	Vishay Intertechnologies	MOSFET 30V Vds 20V Vgs SOT-23 RoHS: Compliant	18234	1:$0.5400 10:$0.4150 100:$0.3080 500:$0.2530 1000:$0.1950 3000:$0.1780 6000:$0.1660 9000:$0.1550 24000:$0.1470
SI2338DS-T1-GE3 DISTI # 8123126	Vishay Intertechnologies	TRANS MOSFET N-CH 30V 5.5A 3-PIN, PK	760	3000:£0.1500 1500:£0.1530 600:£0.1900 300:£0.2330 20:£0.3230
SI2338DS-T1-GE3 DISTI # 8123126P	Vishay Intertechnologies	TRANS MOSFET N-CH 30V 5.5A 3-PIN, RL	7120	3000:£0.1500 1500:£0.1530 600:£0.1900 300:£0.2330
SI2338DS-T1-GE3 DISTI # 2679676	Vishay Intertechnologies	MOSFET, N-CH, 30V, 6A, SOT-23 RoHS: Compliant	39000	3000:$0.2870
SI2338DS-T1-GE3 DISTI # 2646366	Vishay Intertechnologies	MOSFET, N-CH, 30V, 6A, SOT-23 RoHS: Compliant	16921	1000:$0.3190 500:$0.4130 100:$0.5250 10:$0.7020 1:$0.8100
SI2338DS-T1-GE3 DISTI # 2679676	Vishay Intertechnologies	MOSFET, N-CH, 30V, 6A, SOT-23	45000	9000:£0.1540 3000:£0.1750
SI2338DS-T1-GE3 DISTI # TMOS2497	Vishay Intertechnologies	N-CH 30V 6A 28mOhm SOT23 RoHS: Compliant	Stock DE - 0Stock HK - 0Stock US - 0	3000:$0.2600 6000:$0.2451 9000:$0.2302 12000:$0.2080 15000:$0.2005
SI2338DS-T1-GE3	Vishay Intertechnologies	MOSFET 30V Vds 20V Vgs SOT-23 RoHS: Compliant	Americas - 6000

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Availability

Stock:: 23
On Order:: 2006
Enter Quantity:

Current price of SI2338DS-T1-GE3 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com

Reference price (USD)

Quantity
Unit Price
Ext. Price

1: ~~$0.54~~; ~~$0.54~~

10: ~~$0.42~~; ~~$4.15~~

100: ~~$0.31~~; ~~$30.80~~

500: ~~$0.25~~; ~~$126.50~~

1000: ~~$0.20~~; ~~$195.00~~

Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.

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SI2338DS-T1-GE3

Step1:Vacuum Packaging with PL

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Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes