IRFS59N10DPBF

IRFS59N10DPBF
Mfr. #:
IRFS59N10DPBF
Manufacturer:
Infineon Technologies
Description:
MOSFET N-CH 100V 59A D2PAK
Lifecycle:
New from this manufacturer.
Datasheet:
IRFS59N10DPBF Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IRFS59N10DPBF DatasheetIRFS59N10DPBF Datasheet (P4-P6)IRFS59N10DPBF Datasheet (P7-P9)IRFS59N10DPBF Datasheet (P10-P12)
ECAD Model:
Product Attribute
Attribute Value
Manufacturer
IR
Product Category
FETs - Single
Packaging
Tube
Unit-Weight
0.139332 oz
Mounting-Style
SMD/SMT
Package-Case
TO-252-3
Technology
Si
Number-of-Channels
1 Channel
Configuration
Single
Transistor-Type
1 N-Channel
Pd-Power-Dissipation
200 W
Maximum-Operating-Temperature
+ 175 C
Minimum-Operating-Temperature
- 55 C
Fall-Time
12 ns
Rise-Time
90 ns
Vgs-Gate-Source-Voltage
30 V
Id-Continuous-Drain-Current
59 A
Vds-Drain-Source-Breakdown-Voltage
100 V
Rds-On-Drain-Source-Resistance
25 mOhms
Transistor-Polarity
N-Channel
Typical-Turn-Off-Delay-Time
20 ns
Typical-Turn-On-Delay-Time
16 ns
Qg-Gate-Charge
76 nC
Channel-Mode
Enhancement
Tags
IRFS59, IRFS5, IRFS, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ied Electronics & Automation
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.025Ohm;ID 59A;D2Pak;PD 200W;VGS +/-30V
***ure Electronics
Single N-Channel 100V 0.025 Ohm 76 nC HEXFET® Power Mosfet - D2PAK
***eco
Transistor MOSFET N Channel 100 Volt 59 Amp 3-Pin 2+ Tab D2pak
*** Source Electronics
Trans MOSFET N-CH 100V 59A 3-Pin(2+Tab) D2PAK T/R / MOSFET N-CH 100V 59A D2PAK
***ineon SCT
100V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS
***ineon
Benefits: RoHS Compliant; Industry-leading quality; Fully Characterized Avalanche Voltage and Current; Low Gate-to-Drain Charge to Reduce Switching Losses; Fully Characterized Capacitance Including Effective Coss to Simplify Design
***ment14 APAC
MOSFET, N, D2-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:59A; Drain Source Voltage Vds:100V; On Resistance Rds(on):25mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5.5V; Power Dissipation Pd:200W; Transistor Case Style:D2-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:D2-PAK; Current Id Max:59A; Current Temperature:25°C; External Length / Height:4.69mm; External Width:10.54mm; Full Power Rating Temperature:25°C; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-55°C; Package / Case:D2-PAK; Power Dissipation Pd:200W; Power Dissipation Pd:200W; Power Dissipation on 1 Sq. PCB:3.8W; Pulse Current Idm:236A; SMD Marking:59N10; Termination Type:SMD; Voltage Vds:100V; Voltage Vds Typ:100V; Voltage Vgs Max:5.5V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:5.5V
Part # Mfg. Description Stock Price
IRFS59N10DPBF
DISTI # V36:1790_13891310
Infineon Technologies AGTrans MOSFET N-CH 100V 59A 3-Pin(2+Tab) D2PAK Tube
RoHS: Compliant
4000
  • 2000:$1.4490
  • 1000:$1.5200
  • 500:$1.7620
  • 250:$1.9430
  • 100:$2.0760
  • 10:$2.3210
  • 1:$2.6210
IRFS59N10DPBF
DISTI # IRFS59N10DPBF-ND
Infineon Technologies AGMOSFET N-CH 100V 59A D2PAK
RoHS: Compliant
Min Qty: 1
Container: Tube
1806In Stock
  • 1000:$2.2095
  • 500:$2.5765
  • 100:$3.1270
  • 10:$3.7620
  • 1:$4.1800
IRFS59N10DPBF
DISTI # 30572210
Infineon Technologies AGTrans MOSFET N-CH 100V 59A 3-Pin(2+Tab) D2PAK Tube
RoHS: Compliant
4000
  • 2000:$1.4490
  • 1000:$1.5200
  • 500:$1.7620
  • 250:$1.9430
  • 100:$2.0760
  • 10:$2.3210
  • 5:$2.6210
IRFS59N10DPBF
DISTI # 27574694
Infineon Technologies AGTrans MOSFET N-CH 100V 59A 3-Pin(2+Tab) D2PAK Tube
RoHS: Compliant
500
  • 300:$0.9670
  • 200:$1.0084
  • 100:$1.0536
  • 50:$1.1765
IRFS59N10DPBF
DISTI # SP001571716
Infineon Technologies AGTrans MOSFET N-CH 100V 59A 3-Pin(2+Tab) D2PAK (Alt: SP001571716)
RoHS: Compliant
Min Qty: 1
Europe - 8000
  • 1:€2.6900
  • 10:€2.2900
  • 25:€2.2900
  • 50:€2.2900
  • 100:€1.8900
  • 500:€1.6900
  • 1000:€1.3900
IRFS59N10DPBF
DISTI # 70017522
Infineon Technologies AGMOSFET,Power,N-Ch,VDSS 100V,RDS(ON) 0.025Ohm,ID 59A,D2Pak,PD 200W,VGS +/-30V
RoHS: Compliant
0
  • 3200:$3.6400
  • 6400:$3.5670
  • 16000:$3.4580
  • 32000:$3.3120
  • 80000:$3.0940
IRFS59N10DPBF
DISTI # 942-IRFS59N10DPBF
Infineon Technologies AGMOSFET 100V 1 N-CH HEXFET 25mOhms 76nC
RoHS: Compliant
3718
  • 1:$3.2500
  • 10:$2.7600
  • 100:$2.3900
  • 250:$2.2700
  • 500:$2.0300
  • 1000:$1.7100
  • 2000:$1.6300
IRFS59N10DPBFInfineon Technologies AGPower Field-Effect Transistor, 59A I(D), 100V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
RoHS: Compliant
350
  • 1000:$1.6200
  • 500:$1.7000
  • 100:$1.7700
  • 25:$1.8500
  • 1:$1.9900
IRFS59N10DPBFInternational RectifierPower Field-Effect Transistor, 59A I(D), 100V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
RoHS: Compliant
3900
  • 1000:$1.6200
  • 500:$1.7000
  • 100:$1.7700
  • 25:$1.8500
  • 1:$1.9900
IRFS59N10DPBFInternational Rectifier 
RoHS: Compliant
Europe - 600
    IRFS59N10DPBFInfineon Technologies AGINSTOCK710
      IRFS59N10DPBF
      DISTI # 9102302
      Infineon Technologies AGMOSFET, N, D2-PAK
      RoHS: Compliant
      383
      • 1:£1.0400
      • 10:£0.7850
      • 100:£0.7120
      • 250:£0.6980
      IRFS59N10DPBF
      DISTI # 9102302
      Infineon Technologies AGMOSFET, N, D2-PAK
      RoHS: Compliant
      38
      • 1:$5.1500
      • 10:$4.3800
      • 100:$3.8100
      • 250:$3.6200
      • 500:$3.2300
      • 1000:$2.7200
      • 2000:$2.6000
      IRFS59N10DPBF
      DISTI # C1S322000495854
      Infineon Technologies AGTrans MOSFET N-CH 100V 59A 3-Pin(2+Tab) D2PAK Tube
      RoHS: Compliant
      4000
      • 500:$1.7620
      • 250:$1.9430
      • 100:$2.0760
      • 10:$2.3210
      • 1:$2.6210
      Image Part # Description
      IRFS59N10DTRLP

      Mfr.#: IRFS59N10DTRLP

      OMO.#: OMO-IRFS59N10DTRLP

      MOSFET MOSFT 100V 59A 25mOhm 76nC
      IRFS59N10DTRLP-CUT TAPE

      Mfr.#: IRFS59N10DTRLP-CUT TAPE

      OMO.#: OMO-IRFS59N10DTRLP-CUT-TAPE-1190

      New and Original
      IRFS59N10DTRRP

      Mfr.#: IRFS59N10DTRRP

      OMO.#: OMO-IRFS59N10DTRRP-INFINEON-TECHNOLOGIES

      MOSFET N-CH 100V 59A D2PAK
      IRFS59N10DTRRPBF

      Mfr.#: IRFS59N10DTRRPBF

      OMO.#: OMO-IRFS59N10DTRRPBF-1190

      New and Original
      IRFS59N10DTRLP

      Mfr.#: IRFS59N10DTRLP

      OMO.#: OMO-IRFS59N10DTRLP-INFINEON-TECHNOLOGIES

      RF Bipolar Transistors MOSFET MOSFT 100V 59A 25mOhm 76nC
      IRFS59N10DPBF

      Mfr.#: IRFS59N10DPBF

      OMO.#: OMO-IRFS59N10DPBF-INFINEON-TECHNOLOGIES

      MOSFET N-CH 100V 59A D2PAK
      IRFS59N10DTRLPBF

      Mfr.#: IRFS59N10DTRLPBF

      OMO.#: OMO-IRFS59N10DTRLPBF-1190

      New and Original
      Availability
      Stock:
      Available
      On Order:
      5000
      Enter Quantity:
      Current price of IRFS59N10DPBF is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
      Reference price (USD)
      Quantity
      Unit Price
      Ext. Price
      1
      $2.36
      $2.36
      10
      $2.24
      $22.44
      100
      $2.13
      $212.54
      500
      $2.01
      $1 003.70
      1000
      $1.89
      $1 889.30
      Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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