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IPB024N08N5ATMA1

IPB024N08N5ATMA1
Mfr. #:
IPB024N08N5ATMA1
Manufacturer:
Infineon Technologies
Description:
MOSFET N-CH 80V TO263-3
Lifecycle:
New from this manufacturer.
Datasheet:
IPB024N08N5ATMA1 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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ECAD Model:
More Information:
IPB024N08N5ATMA1 more Information
Product Attribute
Attribute Value
Manufacturer
Infineon Technologies
Product Category
Transistors - FETs, MOSFETs - Single
Packaging
Reel
Part-Aliases
IPB024N08N5 SP001227044
Unit-Weight
0.139332 oz
Mounting-Style
SMD/SMT
Package-Case
TO-263-3
Technology
Si
Number-of-Channels
1 Channel
Configuration
Single
Transistor-Type
1 N-Channel
Pd-Power-Dissipation
214 W
Maximum-Operating-Temperature
+ 175 C
Minimum-Operating-Temperature
- 55 C
Fall-Time
15 ns
Rise-Time
14 ns
Vgs-Gate-Source-Voltage
+/- 20 V
Id-Continuous-Drain-Current
120 A
Vds-Drain-Source-Breakdown-Voltage
80 V
Vgs-th-Gate-Source-Threshold-Voltage
2.2 V
Rds-On-Drain-Source-Resistance
3.1 mOhms
Transistor-Polarity
N-Channel
Typical-Turn-Off-Delay-Time
46 ns
Typical-Turn-On-Delay-Time
22 ns
Qg-Gate-Charge
99 nC
Forward-Transconductance-Min
89 S
Channel-Mode
Enhancement
Tags
IPB024, IPB02, IPB0, IPB
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Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 80V 166A Automotive 3-Pin(2+Tab) D2PAK T/R
***ronik
N-CH 80V 120A 2,4mOhm TO263-3
***ineon
OptiMOS 5 80V, Infineons latest generation of power MOSFETs, are especially designed for synchronous rectification in telecom and server power supplies. In addition, these devices can also be utilized in other industrial applications such as solar, low voltage drives and adapters. Within seven different packages, the new OptiMOS 5 80V MOSFETs offer the industrys lowest R DS(on). | Summary of Features: Optimized for synchronous rectification; Ideal for high switching frequency; Output capacitance reduction of up to 44%; R DS(on) reduction of up to 44% | Benefits: Highest system efficiency; Reduced switching and conduction losses; Less paralleling required; Increased power density; Low voltage overshoot | Target Applications: Telecom; Server; Solar; Low voltage drives; Light electric vehicles; Adapter
OptiMOS™ 5 Power MOSFETs
Infineon OptiMOS™ 5 Power MOSFETs are designed to meet requirements for improved system efficiency while reducing system costs. These devices feature lower RDS(on) and Figure of Merit (RDS(on) x Qg) compared to alternative devices. They are designed using a new silicon technology, optimized to meet and exceed the energy efficiency and power density requirements. Typical applications for these MOSFETs include server, datacom and client applications in the computing industry. They can also be used in synchronous rectification in switched mode power supplies (SMPS) and motor control, solar micro inverters and fast switching DC/DC converter applications.
Designing Power Systems
Infineon Power MOSFETs are designed to bring more efficiency, power density and cost effectiveness to your products. The full range of OptiMOS™ and StrongIRFET™ N-channel Power MOSFETs enable innovation and performance in applications such as switch mode power supplies (SMPS), motor control and drives, inverters and computing. The OptiMOS™ and StrongIRFET™ families cover the 20V to 300V range of Power MOSFET products. Infineon offers the OptiMOS™ and StrongIRFET™ product families. These are two highly innovative families that consistently meet the highest quality and performance demands in key specifications for power system design. OptiMOS™ is the market leader in highly efficient solutions for power generation, power supply and power consumption.Learn More
Part # Mfg. Description Stock Price
IPB024N08N5ATMA1
DISTI # V72:2272_06378736		Infineon Technologies AGTrans MOSFET N-CH 80V 166A Automotive 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant		970
  • 500:$2.2230
  • 250:$2.4810
  • 100:$2.6240
  • 25:$3.0160
  • 10:$3.0480
  • 1:$3.5490
IPB024N08N5ATMA1
DISTI # IPB024N08N5ATMA1-ND		Infineon Technologies AGMOSFET N-CH 80V TO263-3
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 1000:$2.2392
IPB024N08N5ATMA1
DISTI # 27074090		Infineon Technologies AGTrans MOSFET N-CH 80V 166A Automotive 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant		1000
  • 1000:$1.9584
IPB024N08N5ATMA1
DISTI # 26195054		Infineon Technologies AGTrans MOSFET N-CH 80V 166A Automotive 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant		970
  • 500:$2.2230
  • 250:$2.4810
  • 100:$2.6240
  • 25:$3.0160
  • 10:$3.0480
  • 4:$3.5490
IPB024N08N5ATMA1
DISTI # IPB024N08N5ATMA1		Infineon Technologies AGMV POWER MOS - Tape and Reel (Alt: IPB024N08N5ATMA1)
RoHS: Compliant
Min Qty: 1000
Container: Reel		Americas - 0
  • 1000:$1.9900
  • 2000:$1.9900
  • 4000:$1.8900
  • 6000:$1.7900
  • 10000:$1.7900
IPB024N08N5ATMA1
DISTI # SP001227044		Infineon Technologies AGMV POWER MOS (Alt: SP001227044)
RoHS: Compliant
Min Qty: 1000		Europe - 0
  • 1000:€1.8900
  • 2000:€1.7900
  • 4000:€1.7900
  • 6000:€1.5900
  • 10000:€1.4900
IPB024N08N5ATMA1
DISTI # IPB024N08N5		Infineon Technologies AGMV POWER MOS (Alt: IPB024N08N5)
RoHS: Compliant
Min Qty: 1000		Asia - 0
  • 1000:$2.0771
  • 2000:$2.0194
  • 3000:$1.9649
  • 5000:$1.9132
  • 10000:$1.8883
  • 25000:$1.8641
  • 50000:$1.8405
IPB024N08N5ATMA1Infineon Technologies AGPower Field-Effect Transistor, 120A I(D), 80V, 0.0024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
RoHS: Compliant		1900
  • 1000:$1.7500
  • 500:$1.8400
  • 100:$1.9200
  • 25:$2.0000
  • 1:$2.1500
IPB024N08N5ATMA1
DISTI # 726-IPB024N08N5ATMA1		Infineon Technologies AGMOSFET N-Ch 80V 120A D2PAK-2
RoHS: Compliant		943
  • 1:$3.8500
  • 10:$3.2800
  • 100:$2.8400
  • 250:$2.7000
  • 500:$2.4200
Image Part # Description
IPB024N08N5ATMA1

Mfr.#: IPB024N08N5ATMA1

OMO.#: OMO-IPB024N08N5ATMA1

 MOSFET N-Ch 80V 120A D2PAK-2
IPB024N08N5

Mfr.#: IPB024N08N5

OMO.#: OMO-IPB024N08N5-1190

 N-CH 80V 120A 2,4mOhm TO263-3
IPB024N08N5ATMA1

Mfr.#: IPB024N08N5ATMA1

OMO.#: OMO-IPB024N08N5ATMA1-INFINEON-TECHNOLOGIES

 MOSFET N-CH 80V TO263-3
Availability
Stock:
Available
On Order:
2500
Enter Quantity:
Current price of IPB024N08N5ATMA1 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Reference price (USD)
Quantity
Unit Price
Ext. Price
1
$2.54
$2.54
10
$2.41
$24.13
100
$2.29
$228.58
500
$2.16
$1 079.40
1000
$2.03
$2 031.80
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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