STBV32G-AP

Product Attribute

Attribute Value

Manufacturer:

STMicroelectronics

Product Category:

Bipolar Transistors - BJT

RoHS:

Y

Package / Case:

TO-92-3

Transistor Polarity:

NPN

Configuration:

Single

Collector- Emitter Voltage VCEO Max:

400 V

Emitter- Base Voltage VEBO:

9 V

Maximum DC Collector Current:

1.5 A

Minimum Operating Temperature:

- 65 C

Maximum Operating Temperature:

+ 150 C

Series:

STBV32G

Height:

4.95 mm

Length:

4.95 mm

Packaging:

Ammo Pack

Width:

3.94 mm

Brand:

STMicroelectronics

DC Collector/Base Gain hfe Min:

20 at 500 uA, 2 V, 8 at 500 mA, 2 V, 5 at 1 A, 2 V

Pd - Power Dissipation:

1.5 W

Product Type:

BJTs - Bipolar Transistors

Factory Pack Quantity:

2000

Subcategory:

Transistors

Unit Weight:

0.016000 oz

Tags

STBV3, STBV, STB