STL25N60M2-EP

Mfr. #:: STL25N60M2-EP
Manufacturer:: STMicroelectronics
Description:: MOSFET N-channel 600 V, 0.184 Ohm typ., 16 A MDmesh M2 EP Power MOSFET in a PowerFLAT 8x8 HV package
Lifecycle:: New from this manufacturer.
Datasheet:: STL25N60M2-EP Datasheet
Delivery:: DHL FedEx Ups TNT EMS
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ECAD Model:
More Information:: STL25N60M2-EP more Information STL25N60M2-EP Product Details

Product Attribute
Attribute Value

Manufacturer:: STMicroelectronics

Product Category:: MOSFET

RoHS:: Y

Technology:: Si

Mounting Style:: SMD/SMT

Package / Case:: PowerFLAT-8x8-HV-5

Number of Channels:: 1 Channel

Transistor Polarity:: N-Channel

Vds - Drain-Source Breakdown Voltage:: 650 V

Id - Continuous Drain Current:: 16 A

Rds On - Drain-Source Resistance:: 206 mOhms

Vgs th - Gate-Source Threshold Voltage:: 3 V

Vgs - Gate-Source Voltage:: 25 V

Qg - Gate Charge:: 29 nC

Minimum Operating Temperature:: - 55 C

Maximum Operating Temperature:: + 150 C

Configuration:: Single

Tradename:: MDmesh

Packaging:: Reel

Height:: 0.9 mm

Length:: 8 mm

Product:: Power MOSFET

Series:: STL25N60M2-EP

Transistor Type:: 1 N-Channel

Type:: N-Channel Power MOSFET

Width:: 8 mm

Brand:: STMicroelectronics

Fall Time:: 16 ns

Moisture Sensitive:: Yes

Product Type:: MOSFET

Rise Time:: 10 ns

Factory Pack Quantity:: 3000

Subcategory:: MOSFETs

Typical Turn-Off Delay Time:: 61 ns

Typical Turn-On Delay Time:: 15 ns

Tags: STL25, STL2, STL

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We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

STL25N60M2-EP Ratings and Reviews

Y***a

Thank You!

2019-07-02

I***y

Works

2019-04-02

K***e

good product. comes in time.well pakaging.

2019-02-25

D***v

The goods did not come, but the communication from the seller was at the highest level, the money was returnedThe seller is good, order from him do not be afraidSends the goods quickly, the post of russia just mows.

2019-04-20

STL25N60M2-EP Description

***icroelectronics: N-channel 600 V, 0.184 Ohm typ., 16 A MDmesh M2 EP Power MOSFET in a PowerFLAT 8x8 HV package

***p One Stop: Trans MOSFET N-CH 600V 16A 4-Pin Power Flat EP T/R

***r Electronics: Power Field-Effect Transistor, 16A I(D), 600V, 0.205ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

***icroelectronics SCT: Power MOSFETs, 600V, 16A, PowerFLAT 8x8 HV, Tape and Reel

***i-Key: MOSFET N-CH 600V 16A PWRFLAT HV

***icroelectronics: N-channel 600 V, 0.168 Ohm typ., 18 A MDmesh M2 Power MOSFET in D2PAK package

***ical: Trans MOSFET N-CH 600V 18A 3-Pin(2+Tab) D2PAK T/R

***r Electronics: Power Field-Effect Transistor, 18A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***ark: MOSFET, N-CH, 600V, 18A, TO-262; Transistor Polarity:N Channel; Continuous Drain Current Id:18A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.168ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power DissipationRoHS Compliant: Yes

***icroelectronics: N-channel 600 V, 0.175 Ohm typ., 18 A MDmesh DM2 Power MOSFET in D2PAK package

***ure Electronics: N-Channel 600 V 0.2 Ohm SMT FDmesh II Plus Power Mosfet - D2PAK

***ical: Trans MOSFET N-CH 600V 18A 3-Pin(2+Tab) D2PAK T/R

***r Electronics: Power Field-Effect Transistor, 18A I(D), 600V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

***ure Electronics: Single N-Channel 600 V 190 mOhm 37 nC CoolMOS Power Mosfet - D2PAK

***ineon SCT: Infineons CoolMOS™ P6 superjunction MOSFET family is designed to enable higher system efficiency whilst being easy to design in, PG-TO263-3, RoHS

***ineon: Infineons CoolMOS P6 product family is designed to enable higher system efficiency whilst being easy to design in. CoolMOS P6 closes the gap between technologies which focus on delivering ultimate performance and those which concentrate more on ease-of-use. | Summary of Features: Reduced gate charge (Q g); Higher V th; Good body diode ruggedness; Optimized integrated R g; Improved dv/dt from 50V/ns; CoolMOS quality with over 12 years manufacturing experience in superjunction technology | Benefits: Improved effciency especially in light load condition; Better efficiency in soft switching applications due to earlier turn-off; Suitable for hard- & soft-switching topologies; Optimized balance of efficiency and ease of use and good controllability of switching behavior; High robustness and better efficiency; Outstanding quality & reliability | Target Applications: PFC stages for server, telecom rectifier, PC silverbox, gaming consoles; PWM stages (TTF, LLC) for server, telecom rectifier, PC silverbox, gaming consoles

***ical: Trans MOSFET N-CH 600V 13A 3-Pin(2+Tab) DPAK T/R

***nell: MOSFET, N-CH, 600V, 13A, 150DEG C, 68W; Transistor Polarity: N Channel; Continuous Drain Current Id: 13A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.155ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.5V; Power Dissipation Pd: 68W; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: CoolMOS C7 Series; Automotive Qualification Standard: -; SVHC: No SVHC (15-Jan-2019)

***ineon: The new 600V CoolMOS C7 series from Infineon offers a ~50% reduction in turn-off losses (E oss ) compared to the CoolMOS CP, offering an outstanding level of performance in PFC, TTF and other hard-switching topologies. | Summary of Features: Reduced switching loss parameters such as Q G, C oss, E oss; Best-in-class figure of merit Q G*R DS(on); Increased switching frequency; Best R (on)*A in the world; Rugged body diode | Benefits: Enables increasing switching frequency without loss in efficiency; Measure showing key parameter for light load and full load efficiency; Doubling the switching frequency will half the size of magnetic components; Smaller packages for same R DS(on); Can be used in many more positions for both hard and soft switching topologies | Target Applications: Server; Telecom; PC power; Solar; Industrial

***emi: N-Channel Power MOSFET, SUPERFET®, Easy Drive, 600 V, 20 A, 190 mΩ, D2PAK

*** Source Electronics: MOSFET N-CH 600V 20A D2PAK / Trans MOSFET N-CH 600V 20A 3-Pin(2+Tab) D2PAK T/R

***roFlash: Power Field-Effect Transistor, 20A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263

***ark: Channel Type:n Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:20A; Transistor Mounting:surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:5V; Power Dissipation:208W; No. Of Pins:3Pins Rohs Compliant: Yes

***nell: MOSFET, N CH, 600V, 20A, TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:20A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.15ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:208W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-263; No. of Pins:3; MSL:MSL 1 - Unlimited; Pulse Current Idm:60A

***rchild Semiconductor: SuperFET® MOSFET is Fairchild Semiconductor’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.

***ure Electronics: N-Channel 600 V 176 mOhm 55 nC SMT E Series Power Mosfet - PowerPAK 8x8

***ical: Trans MOSFET N-CH 600V 20A 4-Pin PowerPAK EP T/R

***el Electronic: MOSFET N-CH 600V 20A POWERPAK8X8

***ronik: N-CH 600V 20A 153mOhm PwPAK8x8

***S: French Electronic Distributor since 1988

STL25N60M2-EP More Information

Standard Products: STMicroelectronics Standard Products are a broad range of industry-standard and drop-in replacements for the most popular general-purpose analog ICs, discrete and serial EEPROMs. The Standard Products are manufactured to the highest quality standards with many AECQ-qualified for automotive applications. A comprehensive set of design aids, including SPICE, IBIS models and simulation tools, are available to make adding to a design-in easy.

STL25N60M2-EP N-Channel Power MOSFET: STMicroelectronics STL25N60M2-EP N-Channel Power MOSFET is developed using MDmesh™ M2 EP enhanced performance technology. The STL25N60M2-EP is housed in a PowerFLAT™ 8x8 HV package with a strip layout and improved vertical structure for low on-resistance and optimized switching characteristics. The MOSFET is suitable for demanding high frequency converters and has very low turn-off switching losses.Learn More

Market price

Part #	Mfg.	Description	Stock	Price
STL25N60M2-EP DISTI # C1S730201027455	STMicroelectronics	Trans MOSFET N-CH 600V 16A 4-Pin Power Flat EP T/R RoHS: Compliant	5	1:$2.5300
STL25N60M2-EP DISTI # 497-16249-2-ND	STMicroelectronics	MOSFET N-CH 600V 16A MLPD8X8 4L RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	On Order	3000:$1.5754
STL25N60M2-EP DISTI # 497-16249-1-ND	STMicroelectronics	MOSFET N-CH 600V 16A MLPD8X8 4L RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	Temporarily Out of Stock	1000:$1.6756 500:$1.9512 100:$2.2585 10:$2.7140 1:$3.0000
STL25N60M2-EP DISTI # 497-16249-6-ND	STMicroelectronics	MOSFET N-CH 600V 16A MLPD8X8 4L RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Temporarily Out of Stock	1000:$1.6756 500:$1.9512 100:$2.2585 10:$2.7140 1:$3.0000
STL25N60M2-EP DISTI # STL25N60M2-EP	STMicroelectronics	Trans MOSFET N-CH 650V 16A 4-Pin PowerFLAT T/R (Alt: STL25N60M2-EP) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel	Europe - 400	3000:€2.9900 6000:€1.8900 12000:€1.3900 18000:€1.3900 30000:€1.2900
STL25N60M2-EP DISTI # STL25N60M2-EP	STMicroelectronics	Trans MOSFET N-CH 650V 16A 4-Pin PowerFLAT T/R - Bulk (Alt: STL25N60M2-EP) RoHS: Compliant Min Qty: 3000 Container: Bulk	Americas - 0	3000:$1.3900 6000:$1.3900 12000:$1.2900 18000:$1.1900 30000:$1.1900
STL25N60M2-EP DISTI # STL25N60M2-EP	STMicroelectronics	Trans MOSFET N-CH 650V 16A 4-Pin PowerFLAT T/R (Alt: STL25N60M2-EP) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel	Asia - 0
STL25N60M2-EP DISTI # 511-STL25N60M2-EP	STMicroelectronics	MOSFET N-channel 600 V, 0.184 Ohm typ., 16 A MDmesh M2 EP Power MOSFET in a PowerFLAT 8x8 HV package RoHS: Compliant	0	1:$2.8900 10:$2.4500 100:$1.9600 500:$1.7200 1000:$1.4300 3000:$1.3300 6000:$1.2800

Image	Part #	Description
	Mfr.#: STL25N60M2-EP OMO.#: OMO-STL25N60M2-EP	MOSFET N-channel 600 V, 0.184 Ohm typ., 16 A MDmesh M2 EP Power MOSFET in a PowerFLAT 8x8 HV package
	Mfr.#: STL25N15F3 OMO.#: OMO-STL25N15F3	MOSFET N-Ch 150 Volt 6 Amp
	Mfr.#: STL25N15F3 OMO.#: OMO-STL25N15F3-STMICROELECTRONICS	IGBT Transistors MOSFET N-Ch 150 Volt 6 Amp
	Mfr.#: STL25N15F4 OMO.#: OMO-STL25N15F4-STMICROELECTRONICS	MOSFET N-CH 150V 25A POWERFLAT
	Mfr.#: STL25N15M3 OMO.#: OMO-STL25N15M3-1190	New and Original
	Mfr.#: STL25N60M2-EP OMO.#: OMO-STL25N60M2-EP-STMICROELECTRONICS	MOSFET N-CH 600V 16A MLPD8X8 4L