STP38N65M5

Mfr. #:: STP38N65M5
Manufacturer:: STMicroelectronics
Description:: MOSFET N-Ch 650V 0.076 Ohm 30 A MDmesh M5
Lifecycle:: New from this manufacturer.
Datasheet:: STP38N65M5 Datasheet
Delivery:: DHL FedEx Ups TNT EMS
Payment:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:: STP38N65M5 more Information STP38N65M5 Product Details

Product Attribute
Attribute Value

Manufacturer:: STMicroelectronics

Product Category:: MOSFET

RoHS:: Y

Technology:: Si

Mounting Style:: Through Hole

Package / Case:: TO-220-3

Number of Channels:: 1 Channel

Transistor Polarity:: N-Channel

Vds - Drain-Source Breakdown Voltage:: 650 V

Id - Continuous Drain Current:: 30 A

Rds On - Drain-Source Resistance:: 95 mOhms

Vgs th - Gate-Source Threshold Voltage:: 3 V

Vgs - Gate-Source Voltage:: 25 V

Qg - Gate Charge:: 71 nC

Minimum Operating Temperature:: - 55 C

Maximum Operating Temperature:: + 150 C

Pd - Power Dissipation:: 190 W

Configuration:: Single

Channel Mode:: Enhancement

Tradename:: MDmesh

Packaging:: Tube

Series:: STP38N65M5

Brand:: STMicroelectronics

Fall Time:: 9 ns

Product Type:: MOSFET

Rise Time:: 9 ns

Factory Pack Quantity:: 1000

Subcategory:: MOSFETs

Unit Weight:: 0.011640 oz

Tags: STP38N, STP38, STP3, STP

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

STP38N65M5 Description

***icroelectronics: N-channel 650 V, 0.073 Ohm typ., 30 A MDmesh m5 Power MOSFET in TO-220 package

***ure Electronics: N-Channel 650 V 95 mOhm Flange Mount MDmesh V Power Mosfet - TO-220

***ical: Trans MOSFET N-CH 650V 30A 3-Pin(3+Tab) TO-220AB Tube

***nell: MOSFET, N-CH, 650V, 30A, TO-220AB; Transistor Polarity: N Channel; Continuous Drain Current Id: 30A; Drain Source Voltage Vds: 650V; On Resistance Rds(on): 0.073ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Po

***r Electronics: Power Field-Effect Transistor, 30A I(D), 650V, 0.095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***icroelectronics: N-channel 650 V, 0.067 Ohm, 35 A MDmesh M5 Power MOSFET in TO-220 package

***ark: Power Mosfet, N Channel, 35 A, 650 V, 0.067 Ohm, 10 V, 4 V Rohs Compliant: Yes

***ical: Trans MOSFET N-CH 650V 35A 3-Pin(3+Tab) TO-220AB Tube

***nell: MOSFET, N CH, 650V, 35A, TO220; Transistor Polarity: N Channel; Continuous Drain Current Id: 35A; Drain Source Voltage Vds: 650V; On Resistance Rds(on): 0.067ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power

***r Electronics: Power Field-Effect Transistor, 35A I(D), 650V, 0.078ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***icroelectronics: N-channel 550 V, 0.06 Ohm typ., 33 A MDmesh M5 Power MOSFET in TO-220 package

***ical: Trans MOSFET N-CH 550V 33A 3-Pin(3+Tab) TO-220AB Tube

***ure Electronics: Single N-Channel 600 V 190 W 62 nC Silicon Through Hole Mosfet - TO-220-3

***r Electronics: Power Field-Effect Transistor, 33A I(D), 550V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***ark: MOSFET, N-CH, 550V, 33A, TO-220; Channel Type:N Channel; Drain Source Voltage Vds:550V; Continuous Drain Current Id:33A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes

***icroelectronics: N-channel 650 V, 0.070 Ohm, 33 A MDmesh(TM) V Power MOSFET in TO-220

***ure Electronics: STP42N65M5 Series N-Channel 650 V 79 mOhm MDmesh V Power MosFet - TO-220

***ical: Trans MOSFET N-CH Si 650V 33A 3-Pin(3+Tab) TO-220AB Tube

***S.I.T. Europe - USA - Asia: Power Field-Effect Transistor, 33A I(D), 650V, 0.079ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***ark: N CH POWER MOSFET, MDmesh, 710V, 33A, TO-220; Channel Type:N Channel; Drain Source Voltage Vds:650V; Continuous Drain Current Id:33A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes

*** Electronic Components: MOSFET 650V CoolMOS CFD2 is Infineon's second generation of market leading high voltage CoolMOS

*** Stop Electro: Power Field-Effect Transistor, 31.2A I(D), 650V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***ineon SCT: Replacement for 650V CoolMOS™ CFD2 is 600V CoolMOS™ CFD7, PG-TO220-3, RoHS

***el Electronic: Ceramic Capacitors 82pF 0603 (1608 Metric) ±1% C0G NP0 Tape & Reel (TR) 1 (Unlimited) General Purpose Surface Mount, MLCC -55°C~125°C Cap Ceramic 82pF 50V C0G 1% SMD 0603 125°C Paper T/R

***ark: MOSFET, N-CH, 650V, 31.2A, 277.8W; Channel Type:N Channel; Drain Source Voltage Vds:650V; Continuous Drain Current Id:31.2A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes

***ineon: 650V CoolMOS CFD2 is Infineon's second generation of market leading high voltage CoolMOS MOSFETs with integrated fast body diode. The CFD2 devices are the successor of 600V CFD with improved energy efficiency. The softer commutation behavior and therefore better EMI behavior gives this product a clear advantage in comparison with competitor parts. | Summary of Features: 650V technology with integrated fast body diode; Limited voltage overshoot during hard commutation; Significant Q g reduction compared to 600V CFD technology; Tighter R DS(ON) max to R DS(on) typ window; Easy to design-in; Lower price compared to 600V CFD technology | Benefits: Low switching losses due to low Q rr at repetitive commutation on body diode; Self limiting di/dt and dv/dt; Low Q oss; Reduced turn on and turn of delay times; Outstanding CoolMOS quality | Target Applications: Telecom; Server; Solar; HID lamp ballast; LED lighting; eMobility

***ical: Trans MOSFET N-CH 650V 24A 3-Pin(3+Tab) TO-220

***ark: MOSFET, N-CH, 650V, 24A, 150DEG C, 128W; Channel Type:N Channel; Drain Source Voltage Vds:650V; Continuous Drain Current Id:24A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3.5V RoHS Compliant: Yes

*** Stop Electro: Power Field-Effect Transistor, 24A I(D), 650V, 0.095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***ineon SCT: Infineon’s CoolMOS™ C7 superjunction MOSFET series is a revolutionary step forward in technology, providing the worlds’s lowest RDS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range, PG-TO220-3, RoHS

***ineon: Infineons new CoolMOS C7 series is a revolutionary step forward in technology, providing the worldss lowest RDS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range. | Summary of Features: 650V voltage; Revolutionary best-in-class R DS(on)/package; Reduced energy stored in output capacitance (Eoss); Lower gate charge Qg; Space saving through use of smaller packages or reduction of parts; 12 years manufacturing experience in superjunction technology | Benefits: Improved safety margin and suitable for both SMPS and solar inverter applications; Lowest conduction losses/package; Low switching losses; Better light load efficiency; Increasing power density; Outstanding CoolMOS quality | Target Applications: Telecom; Server; Solar; PC power

***ical: Trans MOSFET N-CH 650V 31.2A Automotive 3-Pin(3+Tab) TO-220 Tube

***ark: MOSFET, AEC-Q101, N-CH, 650V, TO-220-3; Transistor Polarity:N Channel; Continuous Drain Current Id:31.2A; Drain Source Voltage Vds:650V; On Resistance Rds(on):0.099ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power RoHS Compliant: Yes

*** Stop Electro: Power Field-Effect Transistor, 31.2A I(D), 650V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***ineon SCT: 650V CoolMOS™ CFDA Superjunction (SJ) MOSFET is Infineon's second generation of market leading automotive qualified high voltage CoolMOS™ power MOSFETs, PG-TO220-3, RoHS

***ineon: 650V CoolMOS CFDA is Infineon's second generation of market leading automotive qualified high voltage CoolMOS MOSFET. In addition to the well-known attributes of high quality and reliability required by the automotive industry, the new CoolMOS CFDA series provides now also an integrated fast body diode. | Summary of Features: First 650V automotive qualified technology with integrated fast body diode on the market; Limited voltage overshoot during hard commutation self limiting di/dt and dv/dt; Low gate charge value Q g; Low Q rr at repetitive commutation on body diode & lowQ oss; Reduced turn on and turn of delay times; Compliant to AEC Q101 standard | Benefits: Increased safety margin due to higher breakdown voltage; Reduced EMI appearance and easy to design in; Better light load efficiency; Lower switching losses; Higher switching frequency and/or higher duty cycle possible; High quality and reliability | Target Applications: Unidirectional and bidirectional DC-DC converter; Battery charger; HID lighting

STP38N65M5 More Information

Standard Products: STMicroelectronics Standard Products are a broad range of industry-standard and drop-in replacements for the most popular general-purpose analog ICs, discrete and serial EEPROMs. The Standard Products are manufactured to the highest quality standards with many AECQ-qualified for automotive applications. A comprehensive set of design aids, including SPICE, IBIS models and simulation tools, are available to make adding to a design-in easy.

N-channel MDmesh V Power MOSFET: STMicroelectronics 550 and 650V MDmesh M5 series of super-junction Power MOSFETs offer outstanding RDS(on) values to significantly reduce losses in line-voltage PFC circuits and power supplies. This in turn enables new generations of electronic products offering greater energy savings, superior power density, and more compact applications. This new technology will help product designers tackle emerging challenges such as the high-efficiency targets of new eco-design directives, and will also benefit the renewable energy sector by saving vital watts normally lost in power-control modules.

STM MDmeshV Power MOSFETs - Thru-Hole

Market price

Part #	Mfg.	Description	Stock	Price
STP38N65M5 DISTI # 30993128	STMicroelectronics	Trans MOSFET N-CH 650V 30A 3-Pin(3+Tab) TO-220 Tube RoHS: Compliant	1000	3:$8.8000
STP38N65M5 DISTI # 497-13112-5-ND	STMicroelectronics	MOSFET N-CH 650V 30A TO-220 RoHS: Compliant Min Qty: 1000 Container: Tube	Temporarily Out of Stock	1000:$4.5190
STP38N65M5 DISTI # C1S730200703813	STMicroelectronics	Trans MOSFET N-CH 650V 30A 3-Pin(3+Tab) TO-220 Tube RoHS: Compliant	1000	1000:$4.7200 500:$5.0500 100:$5.7100 50:$5.7700 10:$6.3400 1:$7.0400
STP38N65M5 DISTI # V36:1790_06564716	STMicroelectronics	Trans MOSFET N-CH 650V 30A 3-Pin(3+Tab) TO-220 Tube RoHS: Compliant	0	1000:$3.7140
STP38N65M5 DISTI # STP38N65M5	STMicroelectronics	Trans MOSFET N-CH 650V 30A 3-Pin(3+Tab) TO-220 Tube (Alt: STP38N65M5) RoHS: Compliant Min Qty: 1 Container: Tube	Europe - 300	1000:€1.9900 500:€2.0900 100:€2.1900 50:€2.2900 25:€2.3900 10:€2.4900 1:€2.6900
STP38N65M5 DISTI # STP38N65M5	STMicroelectronics	Trans MOSFET N-CH 650V 30A 3-Pin(3+Tab) TO-220 Tube - Rail/Tube (Alt: STP38N65M5) RoHS: Compliant Min Qty: 1000 Container: Tube	Americas - 0	10000:$3.9900 6000:$4.0900 4000:$4.2900 2000:$4.4900 1000:$4.6900
STP38N65M5 DISTI # 45AC7721	STMicroelectronics	Trans MOSFET N-CH 650V 30A 3-Pin(3+Tab) TO-220 Tube - Bulk (Alt: 45AC7721) RoHS: Compliant Min Qty: 1 Container: Bulk	Americas - 0	1:$4.7300
STP38N65M5 DISTI # 45AC7721	STMicroelectronics	MOSFET, N-CH, 650V, 30A, TO-220AB,Transistor Polarity:N Channel,Continuous Drain Current Id:30A,Drain Source Voltage Vds:650V,On Resistance Rds(on):0.073ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V RoHS Compliant: Yes	234	1:$2.9700 10:$2.9700 25:$2.9700 50:$2.9700 100:$2.9700 250:$2.9700 500:$2.9700
STP38N65M5 DISTI # 511-STP38N65M5	STMicroelectronics	MOSFET N-Ch 650V 0.076 Ohm 30 A MDmesh M5 RoHS: Compliant	0	1:$7.5800 10:$6.8500 25:$6.5300 100:$5.6700 250:$5.4200 500:$4.9400 1000:$4.3000
STP38N65M5	STMicroelectronics		4000
STP38N65M5 DISTI # 7832974P	STMicroelectronics	MOSFET N-CHANNEL 650V 30A TO-220, TU	134	200:£3.4800 100:£3.7500 50:£4.0200 10:£4.3900
STP38N65M5 DISTI # 7832974	STMicroelectronics	MOSFET N-CHANNEL 650V 30A TO-220, EA	18	200:£3.4800 100:£3.7500 50:£4.0200 10:£4.3900 1:£5.3600
STP38N65M5 DISTI # TMOSP12773	STMicroelectronics	N-CH 650V 30A95mOhm TO220-3 RoHS: Compliant	Stock DE - 0Stock HK - 0Stock US - 0	1000:$2.5500
STP38N65M5 DISTI # 2807296	STMicroelectronics	MOSFET, N-CH, 650V, 30A, TO-220AB	208	500:£3.8500 250:£4.2100 100:£4.4000 10:£5.0800 1:£6.4300
STP38N65M5 DISTI # 2807296	STMicroelectronics	MOSFET, N-CH, 650V, 30A, TO-220AB RoHS: Compliant	166	1000:$3.6700 500:$3.9400 250:$4.4200 100:$4.9200 10:$5.5500 1:$6.3700
STP38N65M5 DISTI # XSKDRABS0019630	STMicroelectronics	Power Field-EffectTransistor,17AI(D),650V,0.19ohm,1-Element,N-Channel,Silicon,Metal-oxideSemiconductor FET,TO-220AB RoHS: Compliant	250 in Stock0 on Order	250:$3.0900 200:$3.3100

Image	Part #	Description
	Mfr.#: STP38N65M5 OMO.#: OMO-STP38N65M5	MOSFET N-Ch 650V 0.076 Ohm 30 A MDmesh M5
	Mfr.#: STP38N65M5 38N65M5 OMO.#: OMO-STP38N65M5-38N65M5-1190	New and Original
	Mfr.#: STP381 OMO.#: OMO-STP381-1190	New and Original
	Mfr.#: STP38N06,38N06 OMO.#: OMO-STP38N06-38N06-1190	New and Original
	Mfr.#: STP38N65M5 OMO.#: OMO-STP38N65M5-STMICROELECTRONICS	MOSFET N-CH 650V 30A TO-220

STP38N65M5

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes