STQ2HNK60ZR-AP

STQ2HNK60ZR-AP
Mfr. #:
STQ2HNK60ZR-AP
Manufacturer:
STMicroelectronics
Description:
MOSFET N-channel 600 V, 4.4 Ohm, 2 A Zener-protected SuperMESH(TM) Power MOSFET in TO-92 package
Lifecycle:
New from this manufacturer.
Datasheet:
STQ2HNK60ZR-AP Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:
STQ2HNK60ZR-AP more Information STQ2HNK60ZR-AP Product Details
Product Attribute
Attribute Value
Manufacturer:
STMicroelectronics
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
Through Hole
Package / Case:
TO-92-3
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
600 V
Id - Continuous Drain Current:
500 mA
Rds On - Drain-Source Resistance:
4.8 Ohms
Vgs - Gate-Source Voltage:
30 V
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
3 W
Configuration:
Single
Channel Mode:
Enhancement
Tradename:
SuperMESH
Height:
4.95 mm
Length:
4.95 mm
Series:
STQ2HNK60ZR-AP
Transistor Type:
1 N-Channel
Width:
3.94 mm
Brand:
STMicroelectronics
Fall Time:
50 ns
Product Type:
MOSFET
Rise Time:
30 ns
Factory Pack Quantity:
2000
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
13 ns
Typical Turn-On Delay Time:
10 ns
Unit Weight:
0.007760 oz
Tags
STQ2, STQ
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***icroelectronics
N-channel 600 V, 4.4 Ohm, 2 A Zener-protected SuperMESH(TM) Power MOSFET in TO-92 package
***ure Electronics
Single N-Channel 600 V 4.8 Ohm 15 nC 3 W Silicon Through Hole Mosfet - TO-92
***et
Trans MOSFET N-CH 600V 0.5A 3-Pin TO-92 T/R
***nell
MOSFET, N-CH, 600V, 0.5A, TO-92; Transistor Polarity: N Channel; Continuous Drain Current Id: 500mA; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 4.4ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.75V; Power Dissipation Pd: 3W; Transistor Case Style: TO-92; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: SuperMESH Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (07-Jul-2017)
***r Electronics
Power Field-Effect Transistor, 0.5A I(D), 600V, 4.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92
***et
TRANS MOSFET N-CH 500V 0.35A 3PIN TO-92L
***i-Key Marketplace
MOSFET N-CH 500V 350MA TO92-3
***el Electronic
IC SUPERVISOR 1 CHANNEL 3SSOP
*** Electronics
N-CHANNEL POWER MOSFET
***ser
MOSFETs 500V, Single
***emi
N-Channel Power MOSFET, QFET®, 500 V, 0.35 A, 5.3 Ω, TO-92L
***ark
TRANSISTOR,MOSFET,N-CHANNEL,500V V(BR)DSS,350MA I(D),TO-92
***ical
Trans MOSFET N-CH 500V 0.35A 3-Pin TO-92L Fan-Fold
***rchild Semiconductor
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
***el Electronic
ACS108 Series 600 Vdrm 0.8 A Micro Motor Transient Protected AC Switch - SOT-223
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N-Channel 450V 500mA (Tc) 900mW (Ta) Through Hole TO-92-3
*** Electronics
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***et
Trans MOSFET N-CH 450V 0.5A 3-Pin TO-92 Ammo Pack
***S
Transistor MOSFET 450V <4.5Ω 0.5A 3.1W TO-92
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Power Field-Effect Transistor, 0.5A I(D), 450V, 4.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92
***icroelectronics
N-channel 600 V, 7.2 Ohm, 0.4 A Zener-protected SuperMESH(TM) MOSFET in a TO-92 package
***et
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***r Electronics
Power Field-Effect Transistor, 0.4A I(D), 600V, 8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92
***emi
Power MOSFET, N-Channel, B-FET, 200 V, 1 A, 1.5 Ω, TO-92L
***et
Trans MOSFET N-CH 200V 1A 3-Pin TO-92L T/R
***rchild Semiconductor
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology hasbeen especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters, switch mode power supplies, DC-AC converters for uninterrupted power supply andmotor control.
Standard Products
STMicroelectronics Standard Products are a broad range of industry-standard and drop-in replacements for the most popular general-purpose analog ICs, discrete and serial EEPROMs. The Standard Products are manufactured to the highest quality standards with many AECQ-qualified for automotive applications. A comprehensive set of design aids, including SPICE, IBIS models and simulation tools, are available to make adding to a design-in easy.
Part # Mfg. Description Stock Price
STQ2HNK60ZR-AP
DISTI # V36:1790_06565387
STMicroelectronicsTrans MOSFET N-CH 600V 0.5A 3-Pin TO-92 Ammo
RoHS: Compliant
0
  • 4000000:$0.2376
  • 2000000:$0.2379
  • 400000:$0.2600
  • 40000:$0.2985
  • 4000:$0.3049
STQ2HNK60ZR-AP
DISTI # 497-12344-1-ND
STMicroelectronicsMOSFET N-CH 600V 0.5A TO-92
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
9241In Stock
  • 1000:$0.3530
  • 500:$0.4413
  • 100:$0.5582
  • 10:$0.7280
  • 1:$0.8300
STQ2HNK60ZR-AP
DISTI # 497-12344-3-ND
STMicroelectronicsMOSFET N-CH 600V 0.5A TO-92
RoHS: Compliant
Min Qty: 2000
Container: Tape & Box (TB)
8000In Stock
  • 10000:$0.2785
  • 6000:$0.2892
  • 2000:$0.3106
STQ2HNK60ZR-AP
DISTI # STQ2HNK60ZR-AP
STMicroelectronicsTrans MOSFET N-CH 600V 0.5A 3-Pin TO-92 T/R (Alt: STQ2HNK60ZR-AP)
RoHS: Compliant
Min Qty: 1
Container: Tape and Reel
Europe - 4000
  • 1000:€0.1219
  • 500:€0.1309
  • 100:€0.1419
  • 50:€0.1549
  • 25:€0.1899
  • 10:€0.2439
  • 1:€0.3419
STQ2HNK60ZR-AP
DISTI # STQ2HNK60ZR-AP
STMicroelectronicsTrans MOSFET N-CH 600V 0.5A 3-Pin TO-92 T/R - Ammo Pack (Alt: STQ2HNK60ZR-AP)
RoHS: Compliant
Min Qty: 2000
Container: Ammo Pack
Americas - 4000
  • 20000:$0.2599
  • 12000:$0.2649
  • 8000:$0.2779
  • 4000:$0.2909
  • 2000:$0.3049
STQ2HNK60ZR-AP
DISTI # 511-STQ2HNK60ZR-AP
STMicroelectronicsMOSFET N-channel 600 V, 4.4 Ohm, 2 A Zener-protected SuperMESH(TM) Power MOSFET in TO-92 package
RoHS: Compliant
3009
  • 1:$0.7700
  • 10:$0.6330
  • 100:$0.4080
  • 1000:$0.3270
  • 2500:$0.2760
  • 10000:$0.2660
  • 25000:$0.2550
STQ2HNK60ZR-AP
DISTI # 2784046
STMicroelectronicsMOSFET, N-CH, 600V, 0.5A, TO-921860
  • 500:£0.2490
  • 250:£0.2830
  • 100:£0.3170
  • 25:£0.5070
  • 5:£0.5540
STQ2HNK60ZR-AP
DISTI # 2807309
STMicroelectronicsMOSFET, N-CH, 600V, 0.5A, TO-92
RoHS: Compliant
1575
  • 1000:$0.5320
  • 500:$0.6650
  • 100:$0.8420
  • 5:$1.1000
STQ2HNK60ZR-AP
DISTI # 2784046
STMicroelectronicsMOSFET, N-CH, 600V, 0.5A, TO-92
RoHS: Compliant
1785
  • 1000:$0.5320
  • 500:$0.6650
  • 100:$0.8420
  • 5:$1.1000
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Availability
Stock:
Available
On Order:
1986
Enter Quantity:
Current price of STQ2HNK60ZR-AP is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Reference price (USD)
Quantity
Unit Price
Ext. Price
1
$0.77
$0.77
10
$0.63
$6.33
100
$0.41
$40.80
1000
$0.33
$327.00
2500
$0.28
$690.00
10000
$0.27
$2 660.00
25000
$0.26
$6 375.00
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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