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IKW30N65ES5XKSA1

IKW30N65ES5XKSA1
Mfr. #:
IKW30N65ES5XKSA1
Manufacturer:
Infineon Technologies
Description:
IGBT Transistors TRENCHSTOP 5 S5 is the new IGBT family addressing applications switching between 10kHz and 40kHz to deliver high efficiency, faster time-to-market cycles, circuit design complexity re
Lifecycle:
New from this manufacturer.
Datasheet:
IKW30N65ES5XKSA1 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:
IKW30N65ES5XKSA1 more Information
Product Attribute
Attribute Value
Manufacturer:
Infineon
Product Category:
IGBT Transistors
RoHS:
Y
Technology:
Si
Package / Case:
TO-247-3
Mounting Style:
Through Hole
Configuration:
Single
Collector- Emitter Voltage VCEO Max:
650 V
Collector-Emitter Saturation Voltage:
1.35 V
Maximum Gate Emitter Voltage:
20 V
Continuous Collector Current at 25 C:
62 A
Pd - Power Dissipation:
188 W
Minimum Operating Temperature:
- 40 C
Maximum Operating Temperature:
+ 175 C
Series:
TRENCHSTOP 5 S5
Packaging:
Tube
Height:
20.7 mm
Length:
15.87 mm
Width:
5.31 mm
Brand:
Infineon Technologies
Gate-Emitter Leakage Current:
100 nA
Product Type:
IGBT Transistors
Factory Pack Quantity:
240
Subcategory:
IGBTs
Tradename:
TRENCHSTOP
Part # Aliases:
IKW30N65ES5 SP001319678
Tags
IKW30N65E, IKW30N65, IKW30N6, IKW30N, IKW3, IKW
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We provide 90-360 days warranty.

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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans IGBT Chip N-CH 650V 62A 188000mW 3-Pin(3+Tab) TO-247 Tube
***ure Electronics
650 V, 30 A hard-switching TRENCHSTOP™ 5 S5 IGBT in a TO-247 package
***ark
Igbt, Single, 650V, 62A, To-247; Dc Collector Current:62A; Collector Emitter Saturation Voltage Vce(On):1.35V; Power Dissipation Pd:188W; Collector Emitter Voltage V(Br)Ceo:650V; Transistor Case Style:to-247; No. Of Pins:3Pins; Rohs Compliant: Yes
***ineon
TRENCHSTOP 5 S5 is the new IGBT family addressing applications switching between 10kHz and 40kHz to deliver high efficiency, faster time-to-market cycles, circuit design complexity reduction and PCB bill of material cost optimization. | Summary of Features: Very low V CE(sat) of 1.35V at 25C, 20% lower than TRENCHSTOP 5 H5; I C(n)=four times nominal current (100C T c); Soft current fall characteristics with no tail current; Symmetrical, low voltage overshoot; Gate voltage under control (no oscillation). No risk of unwanted turn-on of device and no need for gate clamping; Maximum junction temperature T vj=175C; Qualified according to JEDEC standards | Benefits: V CE(peak) clamping circuits not required; Suitable for use with single turn-on / turn-off gate resistor; No need for gate clamping components; Gate drivers with Miller clamping not required; Reduction in the EMI filtering needed; Excellent for paralleling | Target Applications: Storage; UPS; Welding; Solar; Charger
TRENCHSTOP™ 5 IGBTs
Infineon TRENCHSTOP™ 5 IGBTs are the next generation of thin wafer IGBT (Insulated Gate Bipolar Transistor) that feature significantly lower conduction and switching losses compared to currently leading solutions. TRENCHSTOP 5 is designed for applications where switching >10kHz. The wafer thickness has been reduced by >25%, which enables a dramatic improvement in both switching and conduction losses, while providing a breakthrough voltage of 650V. This quantum leap in efficiency opens up new opportunities for designers to explore.
Home Appliance Solutions
Infineon Home Appliance Solutions offer a range of products for low power drive in-home appliance applications. These devices meet and exceed the most rigorous requirements for reliability, quality, security and energy efficiency. Included in this portfolio are RC-Drives IGBTs, fast IGBTs, discrete IGBTs, rapid diodes, gate driver ICs, microcontrollers: XMC™ and iMotion™, IPM: CIPOS™ and IRAM.Learn More
TRENCHSTOP™ 5 S5 Medium Speed Switching IGBTs
Infineon TRENCHSTOP™ 5 S5 Medium Speed Switching IGBTs are the link between the L5 and H5 and address applications switching between 10kHz and 40kHz. The IGBTs deliver high efficiency, faster time to market cycles, circuit design complexity reduction and PCB bill of material cost optimization. The S5 are packed with features to help designers achieve goals without the need to increase circuit complexity.
Part # Mfg. Description Stock Price
IKW30N65ES5XKSA1
DISTI # V99:2348_09156913		Infineon Technologies AGTrans IGBT Chip N-CH 650V 62A 188000mW 3-Pin(3+Tab) TO-247 Tube170
  • 1000:$2.2500
  • 500:$2.6840
  • 100:$3.1490
  • 10:$3.6220
  • 1:$4.6871
IKW30N65ES5XKSA1
DISTI # V36:1790_09156913		Infineon Technologies AGTrans IGBT Chip N-CH 650V 62A 188000mW 3-Pin(3+Tab) TO-247 Tube0
    IKW30N65ES5XKSA1
    DISTI # IKW30N65ES5XKSA1-ND    		Infineon Technologies AGIGBT TRENCH 650V 62A TO247-3
    RoHS: Compliant
    Min Qty: 1
    Container: Tube    		1493In Stock
    • 2640:$2.2705
    • 720:$2.8268
    • 240:$3.3206
    • 25:$3.8316
    • 10:$4.0530
    • 1:$4.5100
    IKW30N65ES5XKSA1
    DISTI # 31985261    		Infineon Technologies AGTrans IGBT Chip N-CH 650V 62A 188000mW 3-Pin(3+Tab) TO-247 Tube170
    • 3:$4.6871
    IKW30N65ES5XKSA1
    DISTI # IKW30N65ES5XKSA1    		Infineon Technologies AGTrans IGBT Chip N-CH 650V 62A 3-Pin TO-247 - Rail/Tube (Alt: IKW30N65ES5XKSA1)
    RoHS: Compliant
    Min Qty: 240
    Container: Tube    		Americas - 0
    • 1440:$1.9900
    • 2400:$1.9900
    • 960:$2.0900
    • 480:$2.1900
    • 240:$2.2900
    IKW30N65ES5XKSA1
    DISTI # SP001319678    		Infineon Technologies AGTrans IGBT Chip N-CH 650V 62A 3-Pin TO-247 (Alt: SP001319678)
    RoHS: Compliant
    Min Qty: 1    		Europe - 0
    • 1000:€1.5900
    • 100:€1.7900
    • 500:€1.7900
    • 50:€1.8900
    • 25:€1.9900
    • 10:€2.0900
    • 1:€2.2900
    IKW30N65ES5XKSA1
    DISTI # 12AC9675    		Infineon Technologies AGIGBT, SINGLE, 650V, 62A, TO-247,DC Collector Current:62A,Collector Emitter Saturation Voltage Vce(on):1.35V,Power Dissipation Pd:188W,Collector Emitter Voltage V(br)ceo:650V,Transistor Case Style:TO-247,No. of Pins:3Pins,RoHS Compliant: Yes1477
    • 500:$2.3300
    • 250:$2.6100
    • 100:$2.7500
    • 50:$2.8900
    • 25:$3.0200
    • 10:$3.1600
    • 1:$3.7300
    IKW30N65ES5
    DISTI # 726-IKW30N65ES5    		Infineon Technologies AGIGBT Transistors Trenchstop 5 IGBT
    RoHS: Compliant    		425
    • 1:$4.2900
    • 10:$3.6400
    • 100:$3.1600
    • 250:$3.0000
    • 500:$2.6900
    • 1000:$2.2700
    • 2500:$2.1500
    IKW30N65ES5XKSA1
    DISTI # 726-IKW30N65ES5XKSA1    		Infineon Technologies AGIGBT Transistors TRENCHSTOP 5 S5 is the new IGBT family addressing applications switching between 10kHz and 40kHz to deliver high efficiency, faster time-to-market cycles, circuit design complexity reduction and PCB bill of material cost optimization.
    RoHS: Compliant    		436
    • 1:$4.2900
    • 10:$3.6400
    • 100:$3.1600
    • 250:$3.0000
    • 500:$2.6900
    • 1000:$2.3200
    IKW30N65ES5XKSA1
    DISTI # 2710004    		Infineon Technologies AGIGBT, SINGLE, 650V, 62A, TO-247
    RoHS: Compliant    		1477
    • 2640:$3.4300
    • 720:$4.2600
    • 240:$5.0100
    • 25:$5.7800
    • 10:$6.1100
    • 1:$6.8000
    IKW30N65ES5XKSA1
    DISTI # 2710004    		Infineon Technologies AGIGBT, SINGLE, 650V, 62A, TO-247257
    • 500:£1.6700
    • 250:£1.8700
    • 100:£1.9800
    • 10:£2.2700
    • 1:£2.6700
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    Availability
    Stock:
    426
    On Order:
    2409
    Enter Quantity:
    Current price of IKW30N65ES5XKSA1 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
    Reference price (USD)
    Quantity
    Unit Price
    Ext. Price
    1
    $4.29
    $4.29
    10
    $3.64
    $36.40
    100
    $3.16
    $316.00
    250
    $3.00
    $750.00
    500
    $2.69
    $1 345.00
    1000
    $2.32
    $2 320.00
    Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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