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FF11MR12W1M1B11BOMA1

FF11MR12W1M1B11BOMA1
Mfr. #:
FF11MR12W1M1B11BOMA1
Manufacturer:
Infineon Technologies
Description:
Discrete Semiconductor Modules
Lifecycle:
New from this manufacturer.
Datasheet:
FF11MR12W1M1B11BOMA1 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:
FF11MR12W1M1B11BOMA1 more Information
Product Attribute
Attribute Value
Manufacturer:
Infineon
Product Category:
Discrete Semiconductor Modules
RoHS:
Y
Product:
Power MOSFET Modules
Type:
EasyDUAL Module
Vf - Forward Voltage:
4 V
Vgs - Gate-Source Voltage:
- 10 V, 20 V
Mounting Style:
Press Fit
Package / Case:
Module
Minimum Operating Temperature:
- 40 C
Maximum Operating Temperature:
+ 150 C
Packaging:
Tray
Configuration:
Dual
Brand:
Infineon Technologies
Transistor Polarity:
N-Channel
Fall Time:
28 ns
Id - Continuous Drain Current:
100 A
Operating Supply Voltage:
-
Pd - Power Dissipation:
20 mW
Product Type:
Discrete Semiconductor Modules
Rds On - Drain-Source Resistance:
11 mOhms
Rise Time:
16.5 ns
Factory Pack Quantity:
24
Subcategory:
Discrete Semiconductor Modules
Tradename:
CoolSIC
Typical Turn-Off Delay Time:
64.5 ns
Typical Turn-On Delay Time:
25 ns
Vds - Drain-Source Breakdown Voltage:
1200 V
Vgs th - Gate-Source Threshold Voltage:
3.5 V
Part # Aliases:
FF11MR12W1M1_B11 SP001602204
Tags
FF11, FF1
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
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Multilayer Ceramic Capacitors MLCC - SMD/SMT 0201 9.5pF 50volts C0G +/-0.1pF
***nell
MOSFET MODULE, N-CH, 1.2KV, 100A; Transistor Polarity: N Channel; Continuous Drain Current Id: 100A; Drain Source Voltage Vds: 1.2kV; On Resistance Rds(on): 0.011ohm; Rds(on) Test Voltag; Available until stocks are exhausted
***ark
Mosfet Mod, N-Ch, 1.2Kv, 100A, 0.02W; Mosfet Module Configuration:Half Bridge; Channel Type:Dual N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:1.2Kv; No. Of Pins:22Pins; Rds(On) Test Voltage:- Rohs Compliant: Yes |Infineon FF11MR12W1M1B11BOMA1
***ineon
EasyDUAL 1B 1200 V / 23 m halfbridge module with CoolSiC MOSFET, NTC and PressFIT Contact Technology | Summary of Features: High current density; Best in class switching and conduction losses; Low inductive design; Integrated NTC temperature sensor; PressFIT contact technology; RoHS-compliant modules | Benefits: Highest efficiency for reduced cooling effort; Higher frequency operation; Increased power density; Optimized customers development cycle time and cost | Target Applications: drives; solar; ups; battery-charger
1200V CoolSiC™ Modules
Infineon Technologies 1200V CoolSiC™ Modules are Silicon Carbide (SiC) MOSFET modules that offer good levels of efficiency and system flexibility. These modules come with Near Threshold Circuits (NTC) and PressFIT contact technology. The CoolSiC modules feature high current density, best in class switching and conduction losses, and low inductive design. These modules provide high-frequency operation, increased power density, and optimized development cycle time and cost.
Gen 5 1200V CoolSiC™ Schottky Diodes
Infineon Gen 5 1200V CoolSiC™ Schottky Diodes are offered with forward currents up to 40A for TO-247, 20A in TO-220 and 10A in DPAK. CoolSiC Diodes target solar inverters, UPS, 3P SMPS, energy storage and motor drives applications. With reduction of forward voltage and temperature dependency, the diodes bring a new level of system efficiency.
Part # Mfg. Description Stock Price
FF11MR12W1M1B11BOMA1
DISTI # V99:2348_18204869		Infineon Technologies AGLOW POWER EASY41
  • 1:$187.1699
FF11MR12W1M1B11BOMA1
DISTI # FF11MR12W1M1B11BOMA1-ND		Infineon Technologies AGMOSFET 2 N-CH 1200V 100A MODULE
RoHS: Compliant
Min Qty: 1
Container: Tray		20In Stock
  • 1:$155.8300
FF11MR12W1M1B11BOMA1
DISTI # 32441266		Infineon Technologies AGLOW POWER EASY41
  • 1:$187.1699
FF11MR12W1M1B11BOMA1
DISTI # 32371310		Infineon Technologies AGLOW POWER EASY16
  • 1:$229.2812
FF11MR12W1M1B11BOMA1
DISTI # SP001602204		Infineon Technologies AGLOW POWER EASY (Alt: SP001602204)
RoHS: Compliant
Min Qty: 1		Europe - 43
  • 1000:€131.2900
  • 500:€133.1900
  • 100:€134.6900
  • 50:€137.0900
  • 25:€144.2900
  • 10:€145.8900
  • 1:€150.3900
FF11MR12W1M1B11BOMA1
DISTI # FF11MR12W1M1B11BOMA1		Infineon Technologies AGLOW POWER EASY - Trays (Alt: FF11MR12W1M1B11BOMA1)
RoHS: Compliant
Min Qty: 24
Container: Tray		Americas - 0
  • 240:$132.1900
  • 144:$135.3900
  • 96:$138.8900
  • 48:$142.4900
  • 24:$144.2900
FF11MR12W1M1B11BOMA1
DISTI # FF11MR12W1M1_B11		Infineon Technologies AGLOW POWER EASY (Alt: FF11MR12W1M1_B11)
RoHS: Not Compliant
Min Qty: 24		Asia - 0
    FF11MR12W1M1B11BOMA1
    DISTI # 24AC8569    		Infineon Technologies AGMOSFET MODULE, N-CH, 1.2KV, 100A,Transistor Polarity:N Channel,Continuous Drain Current Id:100A,Drain Source Voltage Vds:1.2kV,On Resistance Rds(on):0.011ohm,Rds(on) Test Voltage Vgs:-,Threshold Voltage Vgs:4.5V,Power RoHS Compliant: Yes14
    • 25:$150.7900
    • 10:$152.9300
    • 5:$156.8300
    • 1:$160.7000
    FF11MR12W1M1B11BOMA1
    DISTI # 726-FF11MR12W1M1B11    		Infineon Technologies AGDiscrete Semiconductor Modules
    RoHS: Compliant    		0
    • 1:$159.1100
    • 5:$155.2800
    • 10:$151.4200
    • 25:$149.3000
    FF11MR12W1M1B11BOMA1Infineon Technologies AGFF11MR12W1M1_B11 1200 V 100A EasyDUAL Module with CoolSiC Mosfet / PressFIT/NTC
    RoHS: Compliant    		24Tray
    • 1:$155.2800
    • 2:$148.3900
    • 5:$139.7500
    FF11MR12W1M1B11BOMA1
    DISTI # 2771412    		Infineon Technologies AGMOSFET MODULE, N-CH, 1.2KV, 100A9
    • 10:£109.0000
    • 5:£113.0000
    • 1:£116.0000
    FF11MR12W1M1B11BOMA1
    DISTI # XSFP00000171367    		Infineon Technologies AG 
    RoHS: Compliant    		19 in Stock0 on Order
    • 19:$207.0400
    • 1:$221.8300
    FF11MR12W1M1B11BOMA1
    DISTI # XSKDRABV0048485    		Infineon Technologies AG 
    RoHS: Compliant    		25 in Stock0 on Order
    • 25:$196.2700
    • 24:$210.2800
    FF11MR12W1M1B11BOMA1
    DISTI # 2771412    		Infineon Technologies AGMOSFET MODULE, N-CH, 1.2KV, 100A
    RoHS: Compliant    		9
    • 1:$237.7900
    Image Part # Description
    FF11MR12W1M1B11BOMA1

    Mfr.#: FF11MR12W1M1B11BOMA1

    OMO.#: OMO-FF11MR12W1M1B11BOMA1

    		 Discrete Semiconductor Modules
    FF11MR12W1M1B11BOMA1

    Mfr.#: FF11MR12W1M1B11BOMA1

    OMO.#: OMO-FF11MR12W1M1B11BOMA1-INFINEON-TECHNOLOGIES

    		 MOSFET 2 N-CH 1200V 100A MODULE
    Availability
    Stock:
    Available
    On Order:
    1000
    Enter Quantity:
    Current price of FF11MR12W1M1B11BOMA1 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
    Reference price (USD)
    Quantity
    Unit Price
    Ext. Price
    1
    $159.11
    $159.11
    5
    $155.28
    $776.40
    10
    $151.42
    $1 514.20
    25
    $149.30
    $3 732.50
    Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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