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IPW65R190CFDA

IPW65R190CFDA
Mfr. #:
IPW65R190CFDA
Manufacturer:
Infineon Technologies
Description:
MOSFET N-Ch 650V 17.5A TO247-3
Lifecycle:
New from this manufacturer.
Datasheet:
IPW65R190CFDA Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:
IPW65R190CFDA more Information
Product Attribute
Attribute Value
Manufacturer:
Infineon
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
Through Hole
Package / Case:
TO-247-3
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
650 V
Id - Continuous Drain Current:
17.5 A
Rds On - Drain-Source Resistance:
171 mOhms
Vgs th - Gate-Source Threshold Voltage:
3.5 V
Vgs - Gate-Source Voltage:
20 V
Qg - Gate Charge:
68 nC
Minimum Operating Temperature:
- 40 C
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
151 W
Configuration:
Single
Channel Mode:
Enhancement
Tradename:
CoolMOS
Packaging:
Tube
Height:
21.1 mm
Length:
16.13 mm
Series:
CoolMOS CFDA
Transistor Type:
1 N-Channel
Width:
5.21 mm
Brand:
Infineon Technologies
Fall Time:
6.4 ns
Product Type:
MOSFET
Rise Time:
8.4 ns
Factory Pack Quantity:
240
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
53.2 ns
Typical Turn-On Delay Time:
12 ns
Part # Aliases:
IPW65R190CFDAFKSA1 IPW65R19CFDAXK SP000928268
Unit Weight:
0.211644 oz
Tags
IPW65R190CF, IPW65R190C, IPW65R19, IPW65R1, IPW65R, IPW65, IPW6, IPW
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We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
CoolMOS™ Power Transistors
Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.
Part # Mfg. Description Stock Price
IPW65R190CFDAFKSA1
DISTI # 31039088		Infineon Technologies AGTrans MOSFET N-CH 650V 17.5A Automotive 3-Pin(3+Tab) TO-247 Tube
RoHS: Compliant		480
  • 500:$2.8608
  • 250:$3.1872
  • 240:$3.3600
IPW65R190CFDAFKSA1
DISTI # IPW65R190CFDAFKSA1-ND		Infineon Technologies AGMOSFET N-CH 650V 17.5A TO247
RoHS: Compliant
Min Qty: 240
Container: Tube		Temporarily Out of Stock
  • 240:$4.0468
IPW65R190CFDAFKSA1
DISTI # V36:1790_06376985		Infineon Technologies AGTrans MOSFET N-CH 650V 17.5A Automotive 3-Pin(3+Tab) TO-247 Tube
RoHS: Compliant		0
    IPW65R190CFDAFKSA1
    DISTI # IPW65R190CFDAFKSA1    		Infineon Technologies AGMOS Power Transistors HV (>= 200V) - Bulk (Alt: IPW65R190CFDAFKSA1)
    Min Qty: 148
    Container: Bulk    		Americas - 0
    • 148:$2.2900
    • 150:$2.1900
    • 298:$2.0900
    • 740:$2.0900
    • 1480:$1.9900
    IPW65R190CFDAFKSA1
    DISTI # IPW65R190CFDAFKSA1    		Infineon Technologies AGMOS Power Transistors HV (>= 200V) - Rail/Tube (Alt: IPW65R190CFDAFKSA1)
    RoHS: Compliant
    Min Qty: 240
    Container: Tube    		Americas - 0
    • 240:$2.4900
    • 480:$2.3900
    • 960:$2.3900
    • 1440:$2.2900
    • 2400:$2.1900
    IPW65R190CFDAFKSA1
    DISTI # IPW65R190CFDA    		Infineon Technologies AGMOS Power Transistors HV (>= 200V) (Alt: IPW65R190CFDA)
    RoHS: Compliant
    Min Qty: 240    		Asia - 0
    • 240:$2.5637
    • 480:$2.4925
    • 720:$2.4251
    • 1200:$2.3613
    • 2400:$2.3306
    • 6000:$2.3008
    • 12000:$2.2717
    IPW65R190CFDAFKSA1
    DISTI # SP000928268    		Infineon Technologies AGMOS Power Transistors HV (>= 200V) (Alt: SP000928268)
    RoHS: Compliant
    Min Qty: 1    		Europe - 0
    • 1:€3.0900
    • 10:€2.4900
    • 25:€2.2900
    • 50:€2.1900
    • 100:€2.0900
    • 500:€2.0900
    • 1000:€1.9900
    IPW65R190CFDAFKSA1
    DISTI # 726-IPW65R190CFDAFKS    		Infineon Technologies AGMOSFET N-Ch 650V 17.5A TO247-3
    RoHS: Compliant    		190
    • 1:$4.7500
    • 10:$4.0300
    • 100:$3.5000
    • 250:$3.3200
    • 500:$2.9800
    IPW65R190CFDA
    DISTI # 726-IPW65R190CFDA    		Infineon Technologies AGMOSFET N-Ch 650V 17.5A TO247-3
    RoHS: Compliant    		11
    • 1:$4.7500
    • 10:$4.0300
    • 100:$3.5000
    • 250:$3.3200
    • 500:$2.9800
    IPW65R190CFDAFKSA1Infineon Technologies AGPower Field-Effect Transistor, 17.5A I(D), 650V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
    RoHS: Compliant    		240
    • 1000:$2.1600
    • 500:$2.2700
    • 100:$2.3700
    • 25:$2.4700
    • 1:$2.6600
    IPW65R190CFDAFKSA1
    DISTI # 8577129    		Infineon Technologies AGMOSFET 650V 17A COOLMOS CFDA AUTO TO247, TU450
    • 480:£1.5590
    • 240:£1.5910
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    Availability
    Stock:
    11
    On Order:
    1994
    Enter Quantity:
    Current price of IPW65R190CFDA is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
    Reference price (USD)
    Quantity
    Unit Price
    Ext. Price
    1
    $4.75
    $4.75
    10
    $4.03
    $40.30
    100
    $3.50
    $350.00
    250
    $3.32
    $830.00
    500
    $2.98
    $1 490.00
    Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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