PHD36N03LT,118

Mfr. #:: PHD36N03LT,118
Manufacturer:: NXP Semiconductors
Description:: MOSFET N-CH 30V 43.4A DPAK
Lifecycle:: New from this manufacturer.
Datasheet:: PHD36N03LT,118 Datasheet
Delivery:: DHL FedEx Ups TNT EMS
Payment:: T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:: PHD36N03LT,118 Datasheet PHD36N03LT,118 Datasheet (P4-P6)PHD36N03LT,118 Datasheet (P7-P9)PHD36N03LT,118 Datasheet (P10-P12)PHD36N03LT,118 Datasheet (P13)
ECAD Model:
More Information:: PHD36N03LT,118 more Information PHD36N03LT,118 Product Details

Product Attribute
Attribute Value

Tags: PHD36N03L, PHD36N0, PHD36, PHD3, PHD

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

PHD36N03LT,118 Description

***th Star Micro: Transistor MOSFET N-CH 30V 43.4A 3-Pin (2+Tab) DPAK T/R

*** Services: CoC and 2-years warranty / RFQ for pricing

*** Americas: N-channel TrenchMOS logic level FET

***-Wing Technology: Tape & Reel (TR) Surface Mount N-Channel Single Mosfet Transistor 7.8A Ta 45A Tc 45A 50W 6.8ns

***emi: Power MOSFET 25 V, 45 A, Single N-Channel, DPAK

***ark: Transistor; Transistor Type:MOSFET; Continuous Drain Current, Id:45A; Drain Source Voltage, Vds:25V; On Resistance, Rds(on):11.7mohm; Rds(on) Test Voltage, Vgs:11.5V; Threshold Voltage, Vgs Typ:1.7V; Power Dissipation, Pd:50W ;RoHS Compliant: Yes

***emi: Power MOSFET 25 V, 45 A, Single N-Channel, DPAK

***Yang: TRANS MOSFET N-CH 25V 9.2A 3PIN DPAK - Rail/Tube

***ser: MOSFETs- Power and Small Signal 25V 45A N-Channel

***r Electronics: Power Field-Effect Transistor, 7.8A I(D), 25V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

***ark: Transistor; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:25V; Continuous Drain Current, Id:45A; On Resistance, Rds(on):12.5mohm; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:1.7V ;RoHS Compliant: Yes

***ser: MOSFETs- Power and Small Signal 25V 45A N-Channel No-Cancel/No-Return

***r Electronics: Power Field-Effect Transistor, 7.8A I(D), 25V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

***et: NFET DPAK 25V 45A 14R TR

***or: MOSFET N-CH 25V 7.8A/45A DPAK

***(Formerly Allied Electronics): IRLR7807ZTRPBF N-channel MOSFET Transistor; 43 A; 30 V; 3+Tab-Pin DPAK

***ure Electronics: Single N-Channel 30V 13.8 mOhm 7 nC HEXFET® Power Mosfet - TO-252AA

***ineon SCT: 30V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS

*** Stop Electro: Power Field-Effect Transistor, 30A I(D), 30V, 0.0138ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

***ineon: Benefits: RoHS Compliant; Industry-leading quality; Low RDS(ON) at 4.5V VGS; Fully Characterized Avalanche Voltage and Current; Ultra-Low Gate Impedance; Logic Level

***nell: MOSFET, N-CH, 30V, 43A, TO-263-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 43A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.011ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.8V; Po

***(Formerly Allied Electronics): MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 0.019Ohm;ID 55A;D-Pak (TO-252AA);PD 107W

***ure Electronics: Single N-Channel 30 V 0.019 Ohm 50 nC HEXFET® Power Mosfet - TO-252AA

***ineon SCT: 30V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS

*** Stop Electro: Power Field-Effect Transistor, 20A I(D), 30V, 0.019ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

***ineon: Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature; Logic Level

***ark: Transistor Polarity:n Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:55A; On Resistance Rds(On):0.019Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:1V Rohs Compliant: Yes

***nell: MOSFET, N LOGIC D-PAK; Transistor type:MOSFET; Current, Id cont:45A; Resistance, Rds on:0.019ohm; Case style:TO-252 (D-Pak); Current, Idm pulse:69A; Marking, SMD:IRLR3103; Power dissipation:69W; Power, Pd:69W; Temperature, current:25°C; Temperature, full power rating:25°C; Termination Type:SMD; Transistor polarity:N; Transistors, No. of:1; Voltage, Vds max:30V; Voltage, Vgs th max:2V

Market price

Part #	Mfg.	Description	Stock
PHD36N03LT,118 DISTI # PHD36N03LT,118-ND	NXP Semiconductors	MOSFET N-CH 30V 43.4A DPAK RoHS: Compliant Min Qty: 10000 Container: Tape & Reel (TR)	Limited Supply - Call
PHD36N03LT /T3 DISTI # 771-PHD36N03LT/T3	NXP Semiconductors	Bipolar Transistors - BJT TAPE13 MOSFET RoHS: Compliant	0
PHD36N03LT,118 DISTI # N/A	NXP Semiconductors	MOSFET PHD36N03LT/DPAK/REEL13//	0

Image	Part #	Description
	Mfr.#: PHD36N03 OMO.#: OMO-PHD36N03-1190	New and Original
	Mfr.#: PHD36N03LT OMO.#: OMO-PHD36N03LT-1190	New and Original
	Mfr.#: PHD36N03LT(PRFRMD) OMO.#: OMO-PHD36N03LT-PRFRMD--1190	New and Original
	Mfr.#: PHD36N03LT+118 OMO.#: OMO-PHD36N03LT-118-1190	New and Original
	Mfr.#: PHD36N03LT,118 OMO.#: OMO-PHD36N03LT-118-NXP-SEMICONDUCTORS	MOSFET N-CH 30V 43.4A DPAK

PHD36N03LT,118

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes